D. J. Wallis - Publications, H-index & Citations

D. J. Wallis

department of materials science and metallurgy, university of cambridge, cambridge cb3 0fs, united kingdom

33H指数

220论文数

5.5K被引数

收录论文 42

发表时间

Effect of buffer layer thickness on recombination in zincblende InGaN/GaN quantum wells 缓冲层厚度对闪锌矿InGaN/GaN量子阱中复合的影响

Journal of Physics D: Applied Physics

IF3.2

2025-11-18

OAAI

X Xu; D Dyer; M Frentrup; W R Fieldhouse-Allen; M J Kappers; G Kusch; D J Wallis; R A Oliver; D J Binks

Beyond transmission electron microscopy imaging: Atom probe tomography reveals chemical inhomogeneity at stacking fault interfaces in InGaN/GaN light-emitting diodes 超越透射电子显微镜成像：原子探针断层术揭示了InGaN/GaN发光二极管中堆垛层错界面处的化学不均匀性

MATERIALIA

IF2.9

2025-05-01

OAAI

Shu, Ruiying; Oliver, Rachel A.; Frentrup, Martin; Kappers, Menno J.; Xiu, Huixin; Kusch, Gunnar; Wallis, David J.; Hofer, Christina; Bagot, Paul A. J.; Moody, Michael P.

Behaviour of Ti/Al/Ti/Au contacts to AlGaN/GaN heterostructures at low temperature

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2025-02-13

PREAI

Adams, Francesca; Ghosh, Saptarsi; Liang, Zhida; Chen, Chen; Suphannarat, Noppasorn; Kappers, Menno J.; Wallis, David J.; Oliver, Rachel A.

Buffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon 无缓冲层硅基氮化镓高电子迁移率异质结构

ADVANCED MATERIALS

IF26.8

2025-01-23

OAAI

Ghosh, S; Frentrup, M; Hinz, AM; Pomeroy, JW; Field, D; Wallis, DJ; Kuball, M; Oliver, RA

Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-10-24

PREAI

Gundimeda, Abhiram; Kusch, Gunnar; Frentrup, Martin; Xiu, Huixin; Shu, Ruiying; Hofer, Christina; Bagot, Paul A. J.; Moody, Michael P.; Kappers, Menno J.; Wallis, David J.; Oliver, Rachel A.

Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy

APPLIED PHYSICS LETTERS

IF3.6

2024-06-07

OAAI

Chen, Chen; Ghosh, Saptarsi; De Wolf, Peter; Liang, Zhida; Adams, Francesca; Kappers, Menno J.; Wallis, David J.; Oliver, Rachel A.

Efficiency droop in zincblende InGaN/GaN quantum wells

NANOSCALE

IF5.1

2024-01-01

OAAI

Dyer, D.; Church, S. A.; Ahumada-Lazo, R.; Kappers, M. J.; Halsall, M. P.; Parkinson, P.; Wallis, D. J.; Oliver, R. A.; Binks, D. J.

Monitoring of the Initial Stages of Diamond Growth on Aluminum Nitride Using In Situ Spectroscopic Ellipsometry

ACS OMEGA

IF4.3

2023-08-11

OAAI

Leigh, William; Mandal, Soumen; Cuenca, Jerome A.; Wallis, David; Hinz, Alexander M.; Oliver, Rachel A.; Thomas, Evan L. H.; Williams, Oliver

GaN-based cryogenic temperature power electronics for superconducting motors in cryo-electric aircraft

SUPERCONDUCTOR SCIENCE & TECHNOLOGY

IF4.2

2023-07-31

OAAI

Wadsworth, Aaron; Thrimawithana, Duleepa J.; Zhao, Lei; Neuburger, Martin; Oliver, Rachel A.; Wallis, David J.

A cross-linkable, organic down-converting material for white light emission from hybrid LEDs

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2023-01-01

OAAI

Yang, Hao; Bruckbauer, Jochen; Kanibolotska, Lyudmyla; Kanibolotsky, Alexander L.; Cameron, Joseph; Wallis, David J.; Martin, Robert W.; Skabara, Peter J.

Cubic GaN and InGaN/GaN quantum wells

APPLIED PHYSICS REVIEWS

IF11.6

2022-11-15

OAAI

Binks, D. J.; Dawson, P.; Oliver, R. A.; Wallis, D. J.

Influence of Al x Ga1-x N nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001)

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2022-02-02

OAAI

Gundimeda, Abhiram; Rostami, Mohammadreza; Frentrup, Martin; Hinz, Alexander; Kappers, Menno J.; Wallis, David J.; Oliver, Rachel A.

Thermal stress modelling of diamond on GaN/III-Nitride membranes

CARBON

IF11.6

2021-04-01

OAAI

Cuenca, Jerome A.; Smith, Matthew D.; Field, Daniel E.; Massabuau, Fabien C-P; Mandal, Soumen; Pomeroy, James; Wallis, David J.; Oliver, Rachel A.; Thayne, Iain; Kuball, Martin; Williams, Oliver A.

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-01-25

OAAI

Ghosh, Saptarsi; Hinz, Alexander; Fairclough, Simon M.; Spiridon, Bogdan F.; Eblabla, Abdalla; Casbon, Michael A.; Kappers, Menno J.; Elgaid, Khaled; Alam, Saiful; Oliver, Rachel A.; Wallis, David J.

Thin film Gallium nitride (GaN) based acoustofluidic Tweezer: Modelling and microparticle manipulation

ULTRASONICS

IF4.1

2020-12-01

OAAI

Sun, Chao; Wu, Fangda; Fu, Yongqing; Wallis, David J.; Mikhaylov, Roman; Yuan, Fan; Liang, Dongfang; Xie, Zhihua; Wang, Hanlin; Tao, Ran; Shen, Ming Hong; Yang, Jian; Xun, Wenpeng; Wu, Zhenlin; Yang, Zhiyong; Cang, Huaixing; Yang, Xin

Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2020-07-20

OAAI

Church, S. A.; Ding, B.; Mitchell, P. W.; Kappers, M. J.; Frentrup, M.; Kusch, G.; Fairclough, S. M.; Wallis, D. J.; Oliver, R. A.; Binks, D. J.

A poly(urethane)-encapsulated benzo[2,3-d:6,7-d′]diimidazole organic down-converter for green hybrid LEDs

MATERIALS CHEMISTRY FRONTIERS

IF6.4

2020-01-01

OAAI

Wiles, Alan A.; Bruckbauer, Jochen; Mohammed, Nabeel; Cariello, Michele; Cameron, Joseph; Findlay, Neil J.; Taylor-Shaw, Elaine; Wallis, David J.; Martin, Robert W.; Skabara, Peter J.; Cooke, Graeme

Implementing fluorescent MOFs as downconverting layers in hybrid light- emitting diodes

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2019-01-01

OAAI

Angioni, Enrico; Marshall, Ross J.; Findlay, Neil J.; Bruckbauer, Jochen; Breig, Benjamin; Wallis, David J.; Martin, Robert W.; Forgan, Ross S.; Skabara, Peter J.

The 2018 GaN power electronics roadmap 2018 GaN电力电子路线图

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2018-03-26

1.0K

OAAI

Amano, H.; Baines, Y.; Beam, E.; Borga, Matteo; Bouchet, T.; Chalker, Paul R.; Charles, M.; Chen, Kevin J.; Chowdhury, Nadim; Chu, Rongming; De Santi, Carlo; De Souza, Maria Merlyne; Decoutere, Stefaan; Di Cioccio, L.; Eckardt, Bernd; Egawa, Takashi; Fay, P.; Freedsman, Joseph J.; Guido, L.; Haeberlen, Oliver; Haynes, Geoff; Heckel, Thomas; Hemakumara, Dilini; Houston, Peter; Hu, Jie; Hua, Mengyuan; Huang, Qingyun; Huang, Alex; Jiang, Sheng; Kawai, H.; Kinzer, Dan; Kuball, Martin; Kumar, Ashwani; Lee, Kean Boon; Li, Xu; Marcon, Denis; Maerz, Martin; McCarthy, R.; Meneghesso, Gaudenzio; Meneghini, Matteo; Morvan, E.; Nakajima, A.; Narayanan, E. M. S.; Oliver, Stephen; Palacios, Tomas; Piedra, Daniel; Plissonnier, M.; Reddy, R.; Sun, Min; Thayne, Iain; Torres, A.; Trivellin, Nicola; Unni, V.; Uren, Michael J.; Van Hove, Marleen; Wallis, David J.; Wang, J.; Xie, J.; Yagi, S.; Yang, Shu; Youtsey, C.; Yu, Ruiyang; Zanoni, Enrico; Zeltner, Stefan; Zhang, Yuhao

Standby Person for Electrical Tasks and Rescue Guidelines for Electrical Incident Victims

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS

IF4.5

2018-03-01

PREAI

Jamil, Shahid; Gammon, Tammy; Wallis, David; Fontaine, Michael D.

研究方向