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K

Keiji Ueno

Saitama University

44H指数
457论文数
7.7K被引数
收录论文 81
发表时间
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Quantitative ToF-SIMS Assessment of In-Plane and Out-of-Plane Nb Doping Uniformity in CVT-Grown MoS2 Crystals定量ToF-SIMS评估CVD生长的MoS2晶体中面内和面外Nb掺杂均匀性
errSmall Methods
IF9.1
err2025-10-20
err0
errOAAI
errItsuki Tanaka; Mian Wei; Tomonori Nishimura; Kaito Kanahashi; Satoru Morito; Keiji Ueno; Amin Azizi; Kosuke Nagashio
err分享
err收藏
Patterning of layered semiconductor GeS2 by laser photooxidation and water immersion通过激光光氧化和水浸方法对层状半导体GeS2进行图案化
errNanoscale
IF5.1
err2025-10-10
err0
errOAAI
errShohi Tahara; Keiji Ueno; Koki Kamiya; Taiga Sakai; Ryo Nouchi
err分享
err收藏
Dimensionality-Induced Transition from Degenerate to Nondegenerate States in Nb-Doped WSe2维度诱导的从简并态到非简并态的跃迁：Nb掺杂WSe2
errACS NANO
IF16
err2025-03-03
err1
PREAI
errKanahashi, K; Tanaka, I; Nishimura, T; Aso, K; Lu, AKA; Morito, S; Chen, LM; Kakeya, T; Watanabe, S; Oshima, Y; Yamada-Takamura, Y; Ueno, K; Azizi, A; Nagashio, K
err分享
err收藏
Spatial and reconfigurable control of photoluminescence from single-layer MoS2 using a strained VO2-based Fabry-Perot cavity
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-11-26
err0
PREAI
errNakayama, Koyo; Toida, Shota; Endo, Takahiko; Inada, Mitsuru; Sato, Shingo; Tani, Hiroshi; Watanabe, Kenji; Taniguchi, Takashi; Ueno, Keiji; Miyata, Yasumitsu; Matsuda, Kazunari; Yamamoto, Mahito
err分享
err收藏
Contact Properties on a Semiconducting MoTe2 Crystal Using Polymorphic Structures
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-09-10
err0
PREAI
errXie, Tianshun; Ke, Mengnan; Kruger, Peter; Ueno, Keiji; Aoki, Nobuyuki
err分享
err收藏
Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-05-24
err3
errOAAI
errXie, Tianshun; Ke, Mengnan; Ueno, Keiji; Watanabe, Kenji; Taniguchi, Takashi; Aoki, Nobuyuki
err分享
err收藏
Single-Gate MoS2 Tunnel FET with a Thickness-Modulated Homojunction具有厚度调制同质结的单栅极MoS2隧道FET
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2024-02-07
err1
PREAI
errFukui, Tomohiro; Nishimura, Tomonori; Miyata, Yasumitsu; Ueno, Keiji; Taniguchi, Takashi; Watanabe, Kenji; Nagashio, Kosuke
err分享
err收藏
Coherent optical response driven by non-equilibrium electron-phonon dynamics in a layered transition-metal dichalcogenide
errAPL MATERIALS
IF4.5
err2024-02-01
err2
errOAAI
errFukuda, Takumi; Makino, Kotaro; Saito, Yuta; Fons, Paul; Ando, Atsushi; Mori, Takuya; Ishikawa, Ryo; Ueno, Keiji; Afalla, Jessica; Hase, Muneaki
err分享
err收藏
Work Function Modulation of Bi/Au Bilayer System toward p-Type WSe2 FET
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2023-12-26
err8
PREAI
errNakajima, Ryuichi; Nishimura, Tomonori; Ueno, Keiji; Nagashio, Kosuke
err分享
err收藏
Silicon-van der Waals heterointegration for CMOS-compatible logic-in-memory design用于CMOS兼容的逻辑存储器设计的硅范德华异质集成
errSCIENCE ADVANCES
IF12.5
err2023-12-08
err0
errOAAI
errLee, Mu-Pai; Gao, Caifang; Tsai, Meng-Yu; Lin, Che-Yi; Yang, Feng-Shou; Sung, Hsin-Ya; Zhang, Chi; Li, Wenwu; Li, Jun; Zhang, Jianhua; Watanabe, Kenji; Taniguchi, Takashi; Ueno, Keiji; Tsukagoshi, Kazuhito; Ho, Ching-Hwa; Chu, Junhao; Chiu, Po-Wen; Li, Mengjiao; Wu, Wen-Wei; Lin, Yen-Fu
err分享
err收藏
Photoinduced Structural Dynamics of 2H-MoTe2 Under Extremely High-Density Excitation Conditions
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2023-07-04
err6
PREAI
errFukuda, Takumi; Ozaki, Uta; Jeong, Samuel; Arashida, Yusuke; En-ya, Kaito; Yoshida, Shoji; Fons, Paul J.; Fujita, Jun-ichi; Ueno, Keiji; Hase, Muneaki; Hada, Masaki
err分享
err收藏
Influence of Effective Mass on Carrier Concentration for PEDOT:PSS and S-PEDOT Thin Films Studied by Ellipsometry and Hall Measurement
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2023-06-27
err2
PREAI
errSato, Ryota; Wasai, Yoko; Izumi, Yuki; Ueno, Keiji; Shirai, Hajime
err分享
err收藏
Ultrafast melting of charge-density wave fluctuations at room temperature in 1T-TiSe2 monitored under non-equilibrium conditions
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-06-12
err2
errOAAI
errMizukoshi, Yu; Fukuda, Takumi; Komori, Yuta; Ishikawa, Ryo; Ueno, Keiji; Hase, Muneaki
err分享
err收藏
p-Type Conversion of WS2 and WSe2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors位置选择氧化掺杂WS2和WSe2的p型转换及其在顶栅晶体管中的应用
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2023-05-24
err13
PREAI
errKato, Ryoichi; Uchiyama, Haruki; Nishimura, Tomonori; Ueno, Keiji; Taniguchi, Takashi; Watanabe, Kenji; Chen, Edward; Nagashio, Kosuke
err分享
err收藏
Fermi Pressure and Coulomb Repulsion Driven Rapid Hot Plasma Expansion in a van der Waals Heterostructure
errNANO LETTERS
IF9.1
err2023-05-08
err7
PREAI
errChoi, Junho; Embley, Jacob; Blach, Daria D.; Perea-Causin, Raul; Erkensten, Daniel; Kim, Dong Seob; Yuan, Long; Yoon, Woo Young; Taniguchi, Takashi; Watanabe, Kenji; Ueno, Keiji; Tutuc, Emanuel; Brem, Samuel; Malic, Ermin; Li, Xiaoqin; Huang, Libai
err分享
err收藏
Carrier Transport Properties in Few-Layer WS0.3Se1.7/(WOX)WS0.3Se1.7 Lateral p+-n Junctions Using a Metal-Oxide-Semiconductor Field- Effect Transistor (MOSFET) Structure
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2023-03-02
err0
PREAI
errKuddus, Abdul; Yokoyama, Kojun; Fan, Wenbo; Ueno, Keiji; Shirai, Hajime
err分享
err收藏
Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics基于过渡金属二硫族化合物的多层面内异质结构，用于高级电子产品
errACS NANO
IF16
err2023-02-27
err12
PREAI
errOgura, Hiroto; Kawasaki, Seiya; Liu, Zheng; Endo, Takahiko; Maruyama, Mina; Gao, Yanlin; Nakanishi, Yusuke; Lim, Hong En; Yanagi, Kazuhiro; Irisawa, Toshifumi; Ueno, Keiji; Okada, Susumu; Nagashio, Kosuke; Miyata, Yasumitsu
err分享
err收藏
Is the Bandgap of Bulk PdSe2 Located Truly in the Far-Infrared Region? Determination by Fourier-Transform Photocurrent Spectroscopy
erradvanced photonics
IF3.9
err2022-09-22
err5
errOAAI
errNishiyama, Wataru; Nishimura, Tomonori; Nishioka, Masao; Ueno, Keiji; Iwamoto, Satoshi; Nagashio, Kosuke
err分享
err收藏
Reversible Charge-Polarity Control for Multioperation-Mode Transistors Based on van der Waals Heterostructures基于范德华异质结构的多操作模式晶体管的可逆电荷极性控制
errADVANCED SCIENCE
IF14.1
err2022-07-13
err12
errOAAI
errChen, Ciao-Fen; Yang, Shih-Hsien; Lin, Che-Yi; Lee, Mu-Pai; Tsai, Meng-Yu; Yang, Feng-Shou; Chang, Yuan-Ming; Li, Mengjiao; Lee, Ko-Chun; Ueno, Keiji; Shi, Yumeng; Lien, Chen-Hsin; Wu, Wen-Wei; Chiu, Po-Wen; Li, Wenwu; Lo, Shun-Tsung; Lin, Yen-Fu
err分享
err收藏
Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2022-05-23
err5
PREAI
errSasaki, Taro; Ueno, Keiji; Taniguchi, Takashi; Watanabe, Kenji; Nishimura, Tomonori; Nagashio, Kosuke
err分享
err收藏

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