未登录 Epitaxial Cr2MnO4 p-n heterojunction to (201) β-Ga2O3 deposited via off-axis magnetron sputtering 外延Cr₂MnO₄ p-n异质结与通过偏轴磁控溅射沉积的(201) β-Ga₂O₃ Akintunde, Babajide; Derksen, Naomi; Imran, Ashik; Gallagher, James C.; Tadjer, Marko J.; Gutierrez, Audrey Rose; Hall, Merlin J.; Orent, Jared T.; Rimal, Gaurab; Kayani, Asghar N.; Pennachio, Daniel J.; Dey, Koushik; Wang, Xin; Gann, Katie R.; Hobart, Karl D.; Mastro, Michael A.; Hauser, Adam J. 分享 收藏
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Nanoscale Infrared Spectroscopic Characterization of Extended Defects in 4H-Silicon Carbide 4h-碳化硅中扩展缺陷的纳米尺度红外光谱表征 Criswell, Scott G.; Mahadik, Nadeemullah A.; Gallagher, James C.; Barnett, Julian; Kim, Luke; Ghorbani, Morvarid; Kamaliya, Bhaveshkumar; Bassim, Nabil D.; Taubner, Thomas; Caldwell, Joshua D. 分享 收藏
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Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility Spencer, Joseph A.; Tadjer, Marko J.; Jacobs, Alan G.; Mastro, Michael A.; Lyons, John L.; Freitas, Jaime A.; Gallagher, James C.; Thieu, Quang T.; Sasaki, Kohei; Kuramata, Akito; Zhang, Yuhao; Anderson, Travis J.; Hobart, Karl D. 分享 收藏
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Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates Tadjer, Marko J.; Alema, Fikadu; Osinsky, Andrei; Mastro, Michael A.; Nepal, Neeraj; Woodward, Jeffrey M.; Myers-Ward, Rachael L.; Glaser, Evan R.; Freitas, Jaime A.; Jacobs, Alan G.; Gallagher, James C.; Mock, Alyssa L.; Pennachio, Daniel J.; Hajzus, Jenifer; Ebrish, Mona; Anderson, Travis J.; Hobart, Karl D.; Hite, Jennifer K.; Eddy Jr., Charles R. 分享 收藏
Structural and electronic properties of Si- and Sn-doped (-201) β-Ga2O3annealed in nitrogen and oxygen atmospheres Tadjer, Marko J.; Freitas, Jaime A., Jr.; Culbertson, James C.; Weber, Marc H.; Glaser, Evan R.; Mock, Alyssa L.; Mahadik, Nadeemullah A.; Schmieder, Kenneth; Jackson, Eric; Gallagher, James C.; Feigelson, Boris N.; Kuramata, Akito 分享 收藏
Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments Foster, Geoffrey M.; Koehler, Andrew; Ebrish, Mona; Gallagher, James; Anderson, Travis; Noesges, Brenton; Brillson, Leonard; Gunning, Brendan; Hobart, Karl D.; Kub, Francis 分享 收藏
Room-temperature skyrmions in strain-engineered FeGe thin films 应变工程FeGe薄膜中的室温skyrmii Budhathoki, Sujan; Sapkota, Arjun; Law, Ka Ming; Ranjit, Smriti; Nepal, Bhuwan; Hoskins, Brian D.; Thind, Arashdeep Singh; Borisevich, Albina Y.; Jamer, Michelle E.; Anderson, Travis J.; Koehler, Andrew D.; Hobart, Karl D.; Stephen, Gregory M.; Heiman, Don; Mewes, Tim; Mishra, Rohan; Gallagher, James C.; Hauser, Adam J. 分享 收藏
High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen Tadjer, Marko J.; Koehler, Andrew D.; Freitas, Jaime A., Jr.; Gallagher, James C.; Specht, Matty C.; Glaser, Evan R.; Hobart, Karl D.; Anderson, Travis J.; Kub, Fritz J.; Thieu, Quang T.; Sasaki, Kohei; Wakimoto, Daiki; Goto, Ken; Watanabe, Shinya; Kuramata, Akito 分享 收藏
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The effect of chemical pressure on the structure and properties of A2CrOsO6 (A = Sr, Ca) ferrimagnetic double perovskite Morrow, Ryan; Soliz, Jennifer R.; Hauser, Adam J.; Gallagher, James C.; Susner, Michael A.; Sumption, Michael D.; Aczel, Adam A.; Yan, Jiaqiang; Yang, Fengyuan; Woodward, Patrick M. 分享 收藏
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