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Akito Kuramata

us air force research laboratory

69H指数
416论文数
2.2W被引数
收录论文 78
发表时间
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β-Ga2O3 MOSFETs on highly uniform 2-in. unintentionally doped vertical Bridgman substrates高均匀性2英寸无意掺杂垂直布里奇曼衬底上的β-Ga2O3 MOSFETs
errJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
IF2.1
err2026-05-01
err0
PREAI
errSowers, Elizabeth; Liddy, Kyle; Bhattacharyya, Arkka; Ueda, Yuki; Islam, Ahmad; Piel, Joshua J.; Chabak, Kelson D.; Igarashi, Takuya; Koshi, Kimiyoshi; Yamakoshi, Shigenobu; Sasaki, Kohei; Kuramata, Akito; Krishnamoorthy, Sriram; Green, Andrew J.
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A multi-fin normally-off β-Ga2O3 vertical transistor with a breakdown voltage exceeding 10 kV一种多鳍型normally-off β-Ga2O3垂直晶体管，其击穿电压超过10 kV
errAPPLIED PHYSICS EXPRESS
IF2.2
err2025-10-01
err1
PREAI
errWakimoto, Daiki; Lin, Chia-Hung; Ema, Kentaro; Ueda, Yuki; Miyamoto, Hironobu; Sasaki, Kohei; Kuramata, Akito
err分享
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Reduced temperature in lateral (AlxGa1-x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-04-10
err4
errOAAI
errMasten, Hannah N.; Lundh, James Spencer; Feygelson, Tatyana I.; Sasaki, Kohei; Cheng, Zhe; Spencer, Joseph A.; Liao, Pai-Ying; Hite, Jennifer K.; Pennachio, Daniel J.; Jacobs, Alan G.; Mastro, Michael A.; Feigelson, Boris N.; Kuramata, Akito; Ye, Peide; Graham, Samuel; Pate, Bradford B.; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J.
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Assessment of channel temperature in β-(AlxGa1-x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-01-31
err1
PREAI
errLundh, James Spencer; Pavlidis, Georges; Sasaki, Kohei; Centrone, Andrea; Spencer, Joseph A.; Masten, Hannah N.; Currie, Marc; Jacobs, Alan G.; Konishi, Keita; Kuramata, Akito; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J.
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Experimental determination of critical thickness limitations of (010) β-(AlxGa1-x)2O3 heteroepitaxial films
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-11-27
err4
PREAI
errLundh, James Spencer; Huynh, Kenny; Liao, Michael; Olsen, William; Pan, Kaicheng; Sasaki, Kohei; Konishi, Keita; Masten, Hannah N.; Hite, Jennifer K.; Mastro, Michael A.; Mahadik, Nadeemullah A.; Goorsky, Mark; Kuramata, Akito; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J.
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Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-09-18
err11
PREAI
errSdoeung, Sayleap; Otsubo, Yuto; Sasaki, Kohei; Kuramata, Akito; Kasu, Makoto
err分享
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Latticemisorientation at domain boundaries in β-Ga2O3 single-crystal substrates observed via synchrotron radiation X-ray diffraction imaging and X-ray reticulography
errJOURNAL OF THE AMERICAN CERAMIC SOCIETY
IF3.8
err2023-05-06
err2
errOAAI
errYao, Yongzhao; Hirano, Keiichi; Sasaki, Kohei; Kuramata, Akito; Sugawara, Yoshihiro; Ishikawa, Yukari
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X-ray topographic observation of dislocations in β-Ga2O3 Schottky barrier diodes and their glide and multiplication under reverse biasΒ-ga2o3肖特基势垒二极管位错的x射线形貌观察及其在反向偏置下的滑移和倍增
errSCRIPTA MATERIALIA
IF5.6
err2023-03-01
err4
errOAAI
errYao, Yongzhao; Wakimoto, Daiki; Miyamoto, Hironobu; Sasaki, Kohei; Kuramata, Akito; Hirano, Keiichi; Sugawara, Yoshihiro; Ishikawa, Yukari
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Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-11-07
err11
errOAAI
errSpencer, Joseph A.; Tadjer, Marko J.; Jacobs, Alan G.; Mastro, Michael A.; Lyons, John L.; Freitas, Jaime A.; Gallagher, James C.; Thieu, Quang T.; Sasaki, Kohei; Kuramata, Akito; Zhang, Yuhao; Anderson, Travis J.; Hobart, Karl D.
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Large-area total-thickness imaging and Burgers vector analysis of dislocations in β-Ga2O3 using bright-field x-ray topography based on anomalous transmission
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-07-05
err11
PREAI
errYao, Yongzhao; Tsusaka, Yoshiyuki; Sasaki, Kohei; Kuramata, Akito; Sugawara, Yoshihiro; Ishikawa, Yukari
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Etch pit formation on β-Ga2O3 by molten KOH plus NaOH and hot H3PO4 and their correlation with dislocations
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2022-07-01
err9
PREAI
errYao, Yongzhao; Sugawara, Yoshihiro; Sato, Koji; Yokoe, Daisaku; Sasaki, Kohei; Kuramata, Akito; Ishikawa, Yukari
err分享
err收藏
Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topography
errAPL MATERIALS
IF4.5
err2022-05-03
err12
errOAAI
errYao, Yongzhao; Hirano, Keiichi; Sugawara, Yoshihiro; Sasaki, Kohei; Kuramata, Akito; Ishikawa, Yukari
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Packaged β-Ga2O3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2022-04-01
err16
PREAI
errWilhelmi, Florian; Kunori, Shinji; Sasaki, Kohei; Kuramata, Akito; Komatsu, Yuji; Lindemann, Andreas
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Line-shaped defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga2O3 Schottky barrier diodes
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-03-23
err21
PREAI
errSdoeung, Sayleap; Sasaki, Kohei; Kawasaki, Katsumi; Hirabayashi, Jun; Kuramata, Akito; Oishi, Toshiyuki; Kasu, Makoto
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Effect of substrate orientation on homoepitaxial growth of β-Ga2O3 by halide vapor phase epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-03-10
err32
PREAI
errGoto, Ken; Murakami, Hisashi; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka; Kumagai, Yoshinao
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Probe-induced surface defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga2O3 Schottky barrier diodes
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-02-28
err15
PREAI
errSdoeung, Sayleap; Sasaki, Kohei; Kawasaki, Katsumi; Hirabayashi, Jun; Kuramata, Akito; Kasu, Makoto
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β-Gallium oxide power electronicsΒ-氧化镓电力电子
errAPL MATERIALS
IF4.5
err2022-02-07
err322
errOAAI
errGreen, Andrew J.; Speck, James; Xing, Grace; Moens, Peter; Allerstam, Fredrik; Gumaelius, Krister; Neyer, Thomas; Arias-Purdue, Andrea; Mehrotra, Vivek; Kuramata, Akito; Sasaki, Kohei; Watanabe, Shinya; Koshi, Kimiyoshi; Blevins, John; Bierwagen, Oliver; Krishnamoorthy, Sriram; Leedy, Kevin; Arehart, Aaron R.; Neal, Adam T.; Mou, Shin; Ringel, Steven A.; Kumar, Avinash; Sharma, Ankit; Ghosh, Krishnendu; Singisetti, Uttam; Li, Wenshen; Chabak, Kelson; Liddy, Kyle; Islam, Ahmad; Rajan, Siddharth; Graham, Samuel; Choi, Sukwon; Cheng, Zhe; Higashiwaki, Masataka
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Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in β-Ga2O3 substrate and homoepitaxial film
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-06-21
err10
PREAI
errOnuma, Takeyoshi; Sasaki, Kohei; Yamaguchi, Tomohiro; Honda, Tohru; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka
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Vertical β-Ga2O3 Schottky rectifiers with 750 V reverse breakdown voltage at 600 K
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2021-05-18
err19
PREAI
errXia, Xinyi; Xian, Minghan; Carey, Patrick; Fares, Chaker; Ren, Fan; Tadjer, Marko J.; Pearton, Stephen J.; Tu, Thieu Quang; Goto, Ken; Kuramata, Akito
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Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-04-29
err50
PREAI
errSdoeung, Sayleap; Sasaki, Kohei; Masuya, Satoshi; Kawasaki, Katsumi; Hirabayashi, Jun; Kuramata, Akito; Kasu, Makoto
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研究方向

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