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A

A. Turos

Institute of Electronic Materials Technology

28H指数
247论文数
3.1K被引数
收录论文 32
发表时间
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Deep-level defects induced by implantations of Si and Mg ions into undoped epitaxial GaN
errSCIENTIFIC REPORTS
IF3.9
err2024-06-20
err0
errOAAI
errKaminski, Pawel; Turos, Andrzej; Kozlowski, Roman; Stefanska-Skrobas, Kamila; Zelazko, Jaroslaw; Grzanka, Ewa
err分享
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The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
errSCIENTIFIC REPORTS
IF3.9
err2021-01-28
err13
errOAAI
errGrabowski, Mikolaj; Grzanka, Ewa; Grzanka, Szymon; Lachowski, Artur; Smalc-Koziorowska, Julita; Czernecki, Robert; Hrytsak, Roman; Moneta, Joanna; Gawlik, Grzegorz; Turos, Andrzej; Leszczynski, Mike
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Indium concentration fluctuations in InGaN/GaN quantum wells
errJOURNAL OF ANALYTICAL ATOMIC SPECTROMETRY
IF3.1
err2019-01-01
err5
PREAI
errMichalowski, Pawel Piotr; Grzanka, Ewa; Grzanka, Szymon; Lachowski, Artur; Staszczak, Grzegorz; Plesiewicz, Jerzy; Leszczynski, Mike; Turos, Andrzej
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Mechanism of damage buildup in ion bombarded ZnO
errACTA MATERIALIA
IF9.3
err2017-08-01
err60
PREAI
errTuros, A.; Jozwik, P.; Wojcik, M.; Gaca, J.; Ratajczak, R.; Stonert, A.
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Surface free energy of ultra-high molecular weight polyethylene modified by electron and gamma irradiation
errAPPLIED SURFACE SCIENCE
IF6.9
err2009-06-01
err67
PREAI
errAbdul-Kader, A. M.; Turos, A.; Radwan, R. M.; Kelany, A. M.
err分享
err收藏
Compositional dependence of damage buildup in Ar-ion bombarded AlGaN
errVACUUM
IF3.9
err2009-05-01
err14
PREAI
errPagowska, K.; Ratajczak, R.; Stonert, A.; Nowicki, L.; Turos, A.
err分享
err收藏
Strain profiles and defect structure in 6H-SiC crystals implanted with 2 MeV As+ ions注入2 MeV As离子的6H-SiC晶体中的应变分布和缺陷结构
errVACUUM
IF3.9
err2009-05-01
err4
PREAI
errWierzchowski, Wojciech; Wieteska, Krzysztof; Graeff, Walter; Turos, Andrzej; Groetzschel, Rainer; Stonert, Anna; Ratajczak, Renata
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Modification of UHMWPE by ion, electron and γ-ray irradiation
errVACUUM
IF3.9
err2009-05-01
err20
PREAI
errTuros, A.; Abdul-Kader, A. M.; Ratajczak, R.; Stonert, A.
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Structural analysis of distributed Bragg reflector mirrors分布式布拉格反射镜的结构分析
errVACUUM
IF3.9
err2009-05-01
err3
PREAI
errRatajczak, R.; Gaca, J.; Wojcik, W.; Stonert, A.; Pagowska, K.; Borysiuk, J.; Turos, A.
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Ion beam analysis of ancient Egyptian wall paintings
errVACUUM
IF3.9
err2009-05-01
err11
PREAI
errEl Aal, Shaaban Abd; Korman, A.; Stonert, A.; Munnik, F.; Turos, A.
err分享
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Ion bombardment of polyethylene-influence of polymer structure
errVACUUM
IF3.9
err2007-06-01
err22
PREAI
errBielinski, Dariusz M.; Tranchida, Davide; Lipinski, Piotr; Jagielski, Jacek; Turos, Andrzej
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Ion implantation for surface modification of biomaterials离子注入对生物材料表面改性的研究
errSURFACE & COATINGS TECHNOLOGY
IF6.1
err2006-06-01
err71
PREAI
errJagielski, J.; Piatkowska, A.; Aubert, P.; Thome, L.; Turos, A.; Kader, A. Abdul
err分享
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Determination of In concentration in InGaAs/GaAs 001 epilayers in the early stage of anisotropic stress relaxation
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2005-09-01
err12
PREAI
errSass, J; Mazur, K; Eichhorn, F; Strupinski, W; Turos, A; Schell, N
err分享
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Hydrogen release in UHMWPE upon he-ion bombardment
errVACUUM
IF3.9
err2005-05-01
err57
PREAI
errAbdul-Kader, AM; Turos, A; Jagielski, J; Nowicki, L; Ratajczak, R; Stonert, A; Al-Ma'adeed, MA
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Use of ion channeling for the study of the damage induced in ceramics by ion irradiation使用离子通道研究离子辐照对陶瓷的损伤
errVACUUM
IF3.9
err2005-05-01
err13
PREAI
errThomé, L; Jagielski, J; Nowicki, L; Turos, A; Gentils, A; Garrido, F
err分享
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Hydrogen behaviour in novel materials for spintronic: GaFeN codoped with Mg, Si and Al
errVACUUM
IF3.9
err2005-05-01
err3
PREAI
errTuros, A; Abdul-Kader, AM; Podsiadlo, S; Strojek, B; Strzalkowski, I; Grambole, D
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X-ray diffraction studies of GaAs implanted with 1.5 MeV Se+ ions
errVACUUM
IF3.9
err2005-05-01
err8
PREAI
errWierzchowski, W; Wieteska, K; Graeff, W; Turos, A; Grötzschel, R
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Structural studies on ion-implanted semiconductors using X-ray synchrotron radiation: Strain evolution and growth of nanocrystals
errVACUUM
IF3.9
err2005-05-01
err3
PREAI
errEichhorn, F; Gaca, J; Heera, V; Schell, N; Turos, A; Weishart, H; Wojcik, M
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Reciprocal space mapping of implanted AIIIBV semiconductor compounds
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2004-01-01
err1
PREAI
errWieteska, K; Wierzchowski, W; Graeff, W; Kuri, G; Misiuk, A; Turos, A; Gawlik, G
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Determination of hydrogen in GaMnN and GaMnMgN by nuclear reaction analysis
errVACUUM
IF3.9
err2003-03-01
err6
PREAI
errPodsiadlo, S; Szyszko, T; Warso, G; Turos, A; Ratajczak, R; Kowalczyk, A; Gebicki, W; Strzalkowski, I; Grambole, D; Hermann, F
err分享
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研究方向

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合作学者
合作期刊
N
Norbert Schell
H 指数: 55 · 论文数: 517
T
T. Suski
H 指数: 47 · 论文数: 599
H
Hj. Matzke
H 指数: 46 · 论文数: 292
M
M. Leszczyński
H 指数: 40 · 论文数: 431
L
L. Thomé
H 指数: 40 · 论文数: 353
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