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M

M. Leszczyński

polish academy of sciences

40H指数
431论文数
7.0K被引数
收录论文 76
发表时间
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Vacancy complexes in GaN single crystals
errMaterialia
IF2.9
err2026-02-06
err0
PREAI
errJakub Čížek; František Hájek; Ewa Grzanka; Filip Dominec; Karla Kuldová; Tomáš Hubáček; Alice Hospodková; Roman Hrytsak; Mike Leszczynski; Tomasz Sochacki; Robert Kucharski; Robert Czernecki; Rudolf Shymon; Romana Kučerková; Jan Kuriplach; Oksana Melikhova
err分享
err收藏
Clusters of vacancies in gallium nitride grown by MOCVD由MOCVD生长的氮化镓中的空位团簇
errJournal of Physics: Materials
IF0
err2025-09-19
err0
errOAAI
errFrantišek Hájek; Jakub Čížek; Jan Kuriplach; Roman Hrytsak; Tomáš Hubáček; Filip Dominec; Karla Kuldová; Vladimír Babin; Ondrej Szabó; Pavel Hubík; Ewa Grzanka; Robert Czernecki; Mike Leszczynski; Maciej Oscar Liedke; Maik Butterling; Eric Hirschmann; Andreas Wagner; Alice Hospodková
err分享
err收藏
In Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum Wells
errNANOMATERIALS
IF4.3
err2025-01-17
err0
errOAAI
errGrzanka, Ewa; Bauer, Sondes; Lachowski, Artur; Grzanka, Szymon; Czernecki, Robert; So, Byeongchan; Baumbach, Tilo; Leszczynski, Mike
err分享
err收藏
Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN
errACTA MATERIALIA
IF9.3
err2024-09-01
err1
errOAAI
errMoneta, J.; Krysko, M.; Domagala, J. Z.; Grzanka, E.; Muziol, G.; Siekacz, M.; Leszczynski, M.; Smalc-Koziorowska, J.
err分享
err收藏
Effect of doping of layers surrounding GaN/InGaN multiple quantum wells on their thermal stability
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2023-11-01
err6
errOAAI
errLachowski, Artur; Grzanka, Ewa; Czernecki, Robert; Grabowski, Mikolaj; Grzanka, Szymon; Leszczynski, Mike; Smalc-Koziorowska, Julita
err分享
err收藏
Polarization Doping in a GaN-InN System-Ab Initio Simulation
errMATERIALS
IF3.2
err2023-01-31
err0
errOAAI
errAhmad, Ashfaq; Strak, Pawel; Kempisty, Pawel; Sakowski, Konrad; Piechota, Jacek; Kangawa, Yoshihiro; Grzegory, Izabella; Leszczynski, Michal; Zytkiewicz, Zbigniew R. R.; Muziol, Grzegorz; Monroy, Eva; Kaminska, Agata; Krukowski, Stanislaw
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err收藏
Space-charge domains in n-type GaN epilayers under pulsed electric field
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-09-06
err4
PREAI
errBalagula, Roman M.; Subacius, Liudvikas; Jorudas, Justinas; Prystawko, Pawel; Grabowski, Mikolaj; Leszczynski, Michal; Kasalynas, Irmantas
err分享
err收藏
Improving thermal stability of InGaN quantum wells by doping of GaN barrier layers
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2022-04-01
err6
PREAI
errLachowski, Artur; Grzanka, Ewa; Grzanka, Szymon; Czernecki, Robert; Grabowski, Mikolaj; Hrytsak, Roman; Nowak, Grzegorz; Leszczynski, Mike; Smalc-Koziorowska, Julita
err分享
err收藏
Modeling of the Point Defect Migration across the AlN/GaN Interfaces-Ab Initio StudyAlN/GaN界面上的点缺陷迁移建模-从头开始研究
errMATERIALS
IF3.2
err2022-01-09
err12
errOAAI
errHrytsak, Roman; Kempisty, Pawel; Grzanka, Ewa; Leszczynski, Michal; Sznajder, Malgorzata
err分享
err收藏
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition通过等离子体增强原子层沉积在氮化镓 (GaN) 上的超薄氮化铝 (AlN) 外延膜中的高度均匀电流传输
errNANOMATERIALS
IF4.3
err2021-12-07
err7
errOAAI
errSchiliro, Emanuela; Giannazzo, Filippo; Di Franco, Salvatore; Greco, Giuseppe; Fiorenza, Patrick; Roccaforte, Fabrizio; Prystawko, Pawel; Kruszewski, Piotr; Leszczynski, Mike; Cora, Ildiko; Pecz, Bela; Fogarassy, Zsolt; Lo Nigro, Raffaella
err分享
err收藏
Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells金属空位在InGaN量子阱热降解机理中的作用
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2021-02-02
err24
PREAI
errSmalc-Koziorowska, Julita; Grzanka, Ewa; Lachowski, Artur; Hrytsak, Roman; Grabowski, Mikolaj; Grzanka, Szymon; Kret, Slawomir; Czernecki, Robert; Turski, Henryk; Marona, Lucja; Markurt, Toni; Schulz, Tobias; Albrecht, Martin; Leszczynski, Mike
err分享
err收藏
The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
errSCIENTIFIC REPORTS
IF3.9
err2021-01-28
err13
errOAAI
errGrabowski, Mikolaj; Grzanka, Ewa; Grzanka, Szymon; Lachowski, Artur; Smalc-Koziorowska, Julita; Czernecki, Robert; Hrytsak, Roman; Moneta, Joanna; Gawlik, Grzegorz; Turos, Andrzej; Leszczynski, Mike
err分享
err收藏
DFT study on point defects migration through the pseudomorphic and lattice-matched InN/GaN interfaces
errCOMPUTATIONAL MATERIALS SCIENCE
IF3.3
err2021-01-01
err14
PREAI
errHrytsak, Roman; Kempisty, Pawel; Grzanka, Ewa; Leszczynski, Michal; Sznajder, Malgorzata
err分享
err收藏
Special Issue Advances in Epitaxial Materials-Editorial Preface
errMATERIALS
IF3.2
err2020-06-09
err1
errOAAI
errLeszczynski, Mike
err分享
err收藏
Influence of Showerhead-Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth
errMATERIALS
IF3.2
err2019-10-16
err2
errOAAI
errCzernecki, Robert; Moszak, Karolina; Olszewski, Wojciech; Grzanka, Ewa; Leszczynski, Mike
err分享
err收藏
Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes
errMATERIALS
IF3.2
err2019-08-14
err7
errOAAI
errSarzynski, Marcin; Grzanka, Ewa; Grzanka, Szymon; Targowski, Grzegorz; Czernecki, Robert; Reszka, Anna; Holy, Vaclav; Nitta, Shugo; Liu, Zhibin; Amano, Hiroshi; Leszczynski, Mike
err分享
err收藏
Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2019-07-01
err10
PREAI
errSchiliro, Emanuela; Giannazzo, Filippo; Bongiorno, Corrado; Di Franco, Salvatore; Greco, Giuseppe; Roccaforte, Fabrizio; Prystawko, Pawel; Kruszewski, Piotr; Leszczynski, Mike; Krysko, Marcin; Michon, Adrien; Cordier, Yvon; Cora, Ildiko; Pecz, Bela; Gargouri, Hassan; Lo Nigro, Raffaella
err分享
err收藏
Electrical properties of vertical GaN Schottky diodes on Ammono-GaN substrate
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2019-06-01
err19
PREAI
errKruszewski, P.; Prystawko, P.; Grabowski, M.; Sochacki, T.; Sidor, A.; Bockowski, M.; Jasinski, J.; Lukasiak, L.; Kisiel, R.; Leszczynski, M.
err分享
err收藏
Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2019-04-01
err12
PREAI
errPrystawko, Pawel; Giannazzo, F.; Krysko, M.; Smalc-Koziorowska, J.; Schiliro, E.; Greco, G.; Roccaforte, F.; Leszczynski, M.
err分享
err收藏
Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at 20 K and 110 K temperature
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2019-04-01
err10
PREAI
errGrigelionis, Ignas; Jorudas, Justinas; Jakstas, Vytautas; Janonis, Vytautas; Kasalynas, Irmantas; Prystawko, Pawel; Kruszewski, Piotr; Leszczynski, Michal
err分享
err收藏

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