Robert E. Stahlbush - Publications, H-index & Citations

Robert E. Stahlbush

United States Department of Defense

32H指数

206论文数

3.2K被引数

收录论文 24

发表时间

Mechanism of novel defect multiplication impacting high power 4H-SiC devices

MATERIALS & DESIGN

IF7.9

2024-12-01

OAAI

Mahadik, N. A.; Dudley, M.; Raghothamachar, B.; Chen, Z.; Stahlbush, R. E.; Hinojosa, M.; Lelis, A.; Sung, W.

Formation and propagation mechanism of complex stacking fault in 180 μm thick 4H-SiC epitaxial layers

SCRIPTA MATERIALIA

IF5.6

2023-10-01

OAAI

Mahadik, Nadeemullah A.; Stahlbush, Robert E.; Dudley, Michael; Raghothamachar, Balaji; Hinojosa, M.; Lelis, A.; Sung, Woongje

Evolution of lattice distortions in 4H-SiC wafers with varying doping

SCIENTIFIC REPORTS

IF3.9

2020-07-02

OAAI

Mahadik, Nadeemullah A.; Das, Hrishikesh; Stoupin, Stanislav; Stahlbush, Robert E.; Bonanno, Peter L.; Xu, Xueping; Rengarajan, Varatharajan; Ruland, Gary E.

Exploiting Phonon-Resonant Near-Field Interaction for the Nanoscale Investigation of Extended Defects

ADVANCED FUNCTIONAL MATERIALS

IF19

2020-01-20

OAAI

Hauer, Benedikt; Marvinney, Claire E.; Lewin, Martin; Mahadik, Nadeemullah A.; Hite, Jennifer K.; Bassim, Nabil; Giles, Alexander J.; Stahlbush, Robert E.; Caldwell, Joshua D.; Taubner, Thomas

High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa2O3 films using monochromatic synchrotron topography

APL MATERIALS

IF4.5

2018-12-14

OAAI

Mahadik, Nadeemullah A.; Tadjer, Marko J.; Bonanno, Peter L.; Hobart, Karl D.; Stahlbush, Robert E.; Anderson, Travis J.; Kuramata, Akito

Carrier lifetime variation in thick 4H-SiC epilayers using two-photon absorption

APPLIED PHYSICS LETTERS

IF3.6

2017-11-30

PREAI

Mahadik, Nadeemullah A.; Stahlbush, Robert E.; Klein, Paul B.; Khachatrian, Ani; Buchner, Stephen; Block, Steven G.

Spontaneous Conversion of Basal Plane Dislocations in 4 Off-Axis 4H-SiC Epitaxial Layers

CRYSTAL GROWTH & DESIGN

IF3.4

2014-10-20

PREAI

Myers-Ward, R. L.; Mahadik, N. A.; Wheeler, V. D.; Nyakiti, L. O.; Stahlbush, R. E.; Imhoff, E. A.; Hobart, K. D.; Eddy, C. R., Jr.; Gaskill, D. K.

Experimental evidence for mobile luminescence center mobility on partial dislocations in 4H-SiC using hyperspectral electroluminescence imaging

APPLIED PHYSICS LETTERS

IF3.6

2013-06-19

PREAI

Caldwell, Joshua D.; Giles, Alexander; Lepage, Dominic; Carrier, Dominic; Moumanis, Khalid; Hull, Brett A.; Stahlbush, Robert E.; Myers-Ward, Rachael L.; Dubowski, Jan J.; Verhaegen, Marc

Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers

APPLIED PHYSICS LETTERS

IF3.6

2012-01-23

PREAI

Mahadik, Nadeemullah A.; Stahlbush, Robert E.; Ancona, M. G.; Imhoff, Eugene A.; Hobart, Karl D.; Myers-Ward, Rachael L.; Eddy, Charles R., Jr.; Gaskill, D. Kurt; Kub, Fritz J.

Mitigating Defects within Silicon Carbide Epitaxy

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2012-01-01

PREAI

Caldwell, J. D.; Stahlbush, R. E.; Mahadik, N. A.

Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide homoepitaxial layers

APPLIED PHYSICS LETTERS

IF3.6

2009-03-25

PREAI

Zhang, N.; Chen, Y.; Zhang, Y.; Dudley, M.; Stahlbush, R. E.