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K

K. Hess

research center julich

59H指数
512论文数
1.3W被引数
收录论文 25
发表时间
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The digital computer as a metaphor for the perfect laboratory experiment: Loophole-free Bell experiments数字计算机作为完美实验室实验的隐喻: 无漏洞的贝尔实验
errCOMPUTER PHYSICS COMMUNICATIONS
IF3.4
err2016-12-01
err8
errOAAI
errDe Raedt, Hans; Michielsen, Kristel; Hess, Karl
err分享
err收藏
Breakdown of Bell's theorem for certain objective local parameter spaces
errPROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
IF9.1
err2004-01-22
err37
errOAAI
errHess, K; Philipp, W
err分享
err收藏
The electrical turn-on characteristics of vertical-cavity surface-emitting lasers
errAPPLIED PHYSICS LETTERS
IF3.6
err2003-11-17
err5
PREAI
errLiu, Y; Choquette, KD; Hess, K
err分享
err收藏
Resonant-wavelength control and optical-confinement analysis for graded SCHVCSELs using a self-consistent effective-index method
errJOURNAL OF LIGHTWAVE TECHNOLOGY
IF4.8
err2003-02-01
err6
PREAI
errNg, WC; Liu, Y; Hess, K
err分享
err收藏
A possible loophole in the theorem of Bell
errPROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
IF9.1
err2001-11-27
err66
errOAAI
errHess, K; Philipp, W
err分享
err收藏
Bell's theorem and the problem of decidability between the views of Einstein and Bohr
errPROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
IF9.1
err2001-11-27
err53
errOAAI
errHess, K; Philipp, W
err分享
err收藏
On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal-oxide-semiconductor field-effect transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-08-06
err6
PREAI
errCheng, KG; Leburton, JP; Hess, K; Lyding, JW
err分享
err收藏
Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-03-26
err2
PREAI
errCheng, KG; Lee, JJ; Hess, K; Lyding, JW
err分享
err收藏
Influence of defects on elastic gate tunneling currents through ultrathin SiO2 gate oxides:: predictions from microscopic models
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2000-11-01
err8
PREAI
errStädele, M; Fischer, B; Tuttle, BR; Hess, K
err分享
err收藏
Anharmonic linewidth of absorption by localized vibrations of H and D adatoms on the surface of Si
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2000-05-01
err1
PREAI
errIpatova, IP; Chikalova-Luzina, OP; Hess, K
err分享
err收藏
Hydrogen-related defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors during hot electron stress在热电子应力期间，金属-氧化物-半导体场效应晶体管的Si(100)-SiO2界面处与氢相关的缺陷产生
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2000-05-01
err1
PREAI
errTuttle, BR; Hess, K; Register, LF
err分享
err收藏
Tight-binding investigation of electron tunneling through ultrathin SiO2 gate oxides
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2000-05-01
err8
PREAI
errStädele, M; Tuttle, BR; Hess, K; Register, LF
err分享
err收藏
Hydrogen and hot electron defect creation at the Si(100)/SiO2 interface of metal-oxide-semiconductor field effect transistors
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2000-02-01
err8
PREAI
errTuttle, BR; McMahon, W; Hess, K
err分享
err收藏
Magnitude of the threshold energy for hot electron damage in metal-oxide-semiconductor field effect transistors by hydrogen desorption
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-11-15
err41
PREAI
errHess, K; Tuttle, B; Register, F; Ferry, DK
err分享
err收藏
Self-consistent Green's function approach to the analysis of dielectrically apertured vertical-cavity surface-emitting lasers
errAPPLIED PHYSICS LETTERS
IF3.6
err1998-12-07
err25
errOAAI
errKlein, B; Register, LF; Hess, K; Deppe, DG; Deng, Q
err分享
err收藏
Ultrahigh vacuum-scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: implications for complementary metal oxide semiconductor technology
errAPPLIED SURFACE SCIENCE
IF6.9
err1998-06-01
err52
PREAI
errLyding, JW; Hess, K; Abeln, GC; Thompson, DS; Moore, JS; Hersam, MC; Foley, ET; Lee, J; Chen, Z; Hwang, ST; Choi, H; Avouris, P; Kizilyalli, IC
err分享
err收藏
Numerical simulation of vertical cavity surface emitting lasers
errOPTICS EXPRESS
IF3.3
err1998-02-16
err23
errOAAI
errKlein, B; Register, LF; Grupen, M; Hess, K
err分享
err收藏
Simulation of carrier capture in semiconductor quantum wells: Bridging the gap from quantum to classical transport
errAPPLIED PHYSICS LETTERS
IF3.6
err1997-09-01
err21
PREAI
errRegister, LF; Hess, K
err分享
err收藏
Severe gain suppression due to dynamic carrier heating in quantum well lasers
errAPPLIED PHYSICS LETTERS
IF3.6
err1997-02-17
err21
PREAI
errGrupen, M; Hess, K
err分享
err收藏
Numerical simulation of shell-filling effects in circular quantum dots
errPHYSICAL REVIEW B
IF3.7
err1997-02-15
err57
PREAI
errMacucci, M; Hess, K; Iafrate, GJ
err分享
err收藏

研究方向

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合作学者
合作期刊
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Phaedon Avouris
H 指数: 136 · 论文数: 626
J
Jeffrey S. Moore
H 指数: 126 · 论文数: 854
M
Mark C. Hersam
H 指数: 123 · 论文数: 979
D
D. K. Ferry
H 指数: 67 · 论文数: 1.3K
N
N. Holonyak
H 指数: 62 · 论文数: 718
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