N. Holonyak - Publications, H-index & Citations

N. Holonyak

University of Illinois System

62H指数

718论文数

1.8W被引数

收录论文 73

发表时间

Resonance-free optical response of a vertical cavity transistor laser

APPLIED PHYSICS LETTERS

IF3.6

2017-09-22

OAAI

Feng, M.; Wu, Cheng-Han; Wu, M. K.; Wu, Chao-Hsin; Holonyak, N., Jr.

Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution

APPLIED PHYSICS LETTERS

IF3.6

2015-11-02

PREAI

Feng, M.; Iverson, E. W.; Wang, C. Y.; Holonyak, N., Jr.

Effect of the energy barrier in the base of the transistor laser on the recombination lifetime

APPLIED PHYSICS LETTERS

IF3.6

2014-02-26

PREAI

Bambery, R.; Wang, C.; Dallesasse, J. M.; Feng, M.; Holonyak, N., Jr.

Relative intensity noise in high speed microcavity laser

APPLIED PHYSICS LETTERS

IF3.6

2013-10-03

PREAI

Tan, F.; Wu, M. K.; Liu, M.; Feng, M.; Holonyak, N., Jr.

The Transistor Laser: Theory and Experiment

PROCEEDINGS OF THE IEEE

IF25.9

2013-10-01

PREAI

Then, Han Wui; Feng, Milton; Holonyak, Nick, Jr.

Selective oxidization cavity confinement for low threshold vertical cavity transistor laser

APPLIED PHYSICS LETTERS

IF3.6

2013-07-02

PREAI

Wu, M. K.; Liu, M.; Tan, F.; Feng, M.; Holonyak, N., Jr.

The effect of ground and first excited state transitions on transistor laser relative intensity noise

APPLIED PHYSICS LETTERS

IF3.6

2013-02-26

PREAI

Tan, F.; Xu, W.; Huang, X.; Feng, M.; Holonyak, N., Jr.

Relative intensity noise of a quantum well transistor laser

APPLIED PHYSICS LETTERS

IF3.6

2012-10-11

PREAI

Tan, F.; Bambery, R.; Feng, M.; Holonyak, N., Jr.

Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling

APPLIED PHYSICS LETTERS

IF3.6

2012-08-20

PREAI

Wu, M. K.; Feng, M.; Holonyak, N., Jr.

Transistor laser optical and electrical linearity enhancement with collector current feedback

APPLIED PHYSICS LETTERS

IF3.6

2012-05-29

PREAI

Then, H. W.; Tan, F.; Feng, M.; Holonyak, N., Jr.

Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors

APPLIED PHYSICS LETTERS

IF3.6

2011-09-05

PREAI

Huang, Y.; Ryou, J-H; Dupuis, R. D.; Dixon, F.; Feng, M.; Holonyak, N., Jr.; Kuciauskas, D.

Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

APPLIED PHYSICS LETTERS

IF3.6

2011-08-10

OAAI

Tan, F.; Bambery, R.; Feng, M.; Holonyak, N., Jr.

Energy efficient microcavity lasers with 20 and 40 Gb/s data transmission

APPLIED PHYSICS LETTERS

IF3.6

2011-05-10

PREAI

Tan, F.; Wu, C. H.; Feng, M.; Holonyak, N., Jr.

Bandfilling and photon-assisted tunneling in a quantum-well transistor laser

APPLIED PHYSICS LETTERS

IF3.6

2011-03-22

PREAI

Feng, M.; Bambery, R.; Holonyak, N., Jr.

Temperature dependence of a high-performance narrow-stripe (1 μm) single quantum-well transistor laser

APPLIED PHYSICS LETTERS

IF3.6

2011-02-03

PREAI

Feng, M.; Holonyak, N., Jr.; James, A.

The effect of mode spacing on the speed of quantum-well microcavity lasers

APPLIED PHYSICS LETTERS

IF3.6

2010-09-01

PREAI

Wu, C. H.; Tan, F.; Feng, M.; Holonyak, N., Jr.

Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser

APPLIED PHYSICS LETTERS

IF3.6

2010-06-28

PREAI

Then, H. W.; Wu, C. H.; Feng, M.; Holonyak, N., Jr.; Walter, G.

Distributed feedback transistor laser

APPLIED PHYSICS LETTERS

IF3.6

2010-06-14

PREAI

Dixon, F.; Feng, M.; Holonyak, N., Jr.

Microwave characterization of Purcell enhancement in a microcavity laser

APPLIED PHYSICS LETTERS

IF3.6

2010-03-31

PREAI

Then, H. W.; Wu, C. H.; Feng, M.; Holonyak, N., Jr.

Microwave determination of electron-hole recombination dynamics from spontaneous to stimulated emission in a quantum-well microcavity laser 微波确定量子阱微腔激光器中从自发发射到受激发射的电子-空穴复合动力学

APPLIED PHYSICS LETTERS

IF3.6

2010-03-31

PREAI

Wu, C. H.; Then, H. W.; Feng, M.; Holonyak, N., Jr.

研究方向