Yingnan Guo

hebei university

H指数:12

被引数:412

个人简介

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Reply to “Unsubstantiated Anomalous Electron Doping in CdS via Cu Substitution for Cd”

回复：“CdS中未经验证的通过Cu替代Cd的异常电子掺杂”

Advanced Functional Materials

IF19

2025-09-100

PRE

Te0.75Se0.25/Si/AZO Dual-Heterostructure Photodetector for Spectral Selective Imaging and Secure Optical Communication

Te₀.₇₅Se₀.₂₅/Si/AZO双异质结构光电探测器，用于光谱选择性成像和安全光通信

Laser & Photonics Reviews

IF10

2025-09-100

PRE

Intermolecular Interaction Induced Synergistic Passivation toward Efficient and Stable 1.68 eV Bandgap Perovskite Solar Cells

分子间相互作用诱导的协同钝化作用，用于高效稳定的1.68 eV带隙钙钛矿太阳能电池

SMALL

IF12.1

2025-05-270

PRE

Selenization Induced Surface Modification of SnOx for High-Performance SnOx/Te0.73Se0.27 Short-Wavelength Infrared Photodetection

硒化诱导的SnOx表面改性及其在高性能SnOx/Te0.73Se0.27短波长红外光电探测中的应用

ADVANCED OPTICAL MATERIALS

IF7.2

2025-03-280

PRE

Optical characterization of the type-II hybrid nanostructure with the GaSb/GaAs quantum dots coupled to an InGaAs/GaAs quantum well

OPTICS EXPRESS

IF3.3

2025-02-110

Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures

体化合物和量子阱GaAsSb/GaAs异质结构中载流子局域化的研究

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2025-02-010

PRE

Reducing Parasitic Loss and Deep Defect Formation via Copper Doping Toward Highly Efficient Sb2Se3 Solar Cells

通过铜掺杂减少寄生损耗和深度缺陷形成，以实现高效Sb2Se3太阳能电池

ADVANCED FUNCTIONAL MATERIALS

IF0

2025-01-151

PRE

Luminescence efficiency and carrier dynamics for InGaAs/GaAs surface quantum dots in coupled heterostructures

JOURNAL OF LUMINESCENCE

IF3.6

2024-11-010

PRE

Manipulating formation of different InGaAs/GaAs nanostructures via tailoring As4 flux

APPLIED PHYSICS LETTERS

IF3.6

2024-10-280

PRE

Controlling Unintentional Defects Enables High-Efficient Antimony Selenide Solar Cells

控制无意缺陷可实现高效硒化锑太阳能电池

ADVANCED FUNCTIONAL MATERIALS

IF19

2024-03-201

PRE

Reduction of bulk and interface defects via photo-annealing treatment for high-efficiency antimony selenide solar cells

通过光退火处理减少高效硒化锑太阳能电池的体和界面缺陷

Energy & Environmental Science

IF30.8

2024-01-010

PRE

Tunable near-infrared phosphor LiSc2SbO6:Cr3+ by Mg2+ substitution and Yb3+ co-doping for phosphor-converted light-emitting diodes

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2024-01-010

PRE

Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness

APPLIED SURFACE SCIENCE

IF6.9

2023-11-011

PRE

Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure

APPLIED PHYSICS LETTERS

IF3.6

2023-04-262

PRE

Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures

OPTICAL MATERIALS

IF4.2

2022-12-010

PRE

High-Efficiency Flexible Sb2Se3 Solar Cells by Back Interface and Absorber Bulk Deep-Level Trap Engineering

ACS ENERGY LETTERS

IF18.2

2022-11-2321

PRE

Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect

APPLIED SURFACE SCIENCE

IF6.9

2022-03-017

PRE

Lateral carrier transfer for high density InGaAs/GaAs surface quantum dots

高密度InGaAs/GaAs表面量子点的横向载流子传输

JOURNAL OF LUMINESCENCE

IF3.6

2020-02-016

PREAI

Comparative study of photoluminescence for type-I InAs/GaAs0.89Sb0.11 and type-II InAs/GaAs0.85Sb0.15 quantum dots

OPTICAL MATERIALS

IF4.2

2019-12-015

OAAI

Surface passivation of crystalline silicon by intrinsic a-Si:H films deposited in remote low frequency inductively coupled plasma

APPLIED SURFACE SCIENCE

IF6.9

2019-09-015

PREAI

Yingnan Guo

个人简介

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