Baolai Liang

university of california - los angeles

H指数:32

被引数:4,304

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Engineering Exciton g-Factors With Light in Type-II Heterostructures

利用光调控II型异质结构中的激子g因子

Advanced Optical Materials

IF7.2

2026-08-100

OAAI

III-V-on-Si Midwave Infrared Photodetectors with High Operating Temperature

III-V-on-Si 中波红外光电探测器的高工作温度

Crystal Growth & Design

IF0

2026-04-010

PRE

Optimize wet etch method for high yield AlAsSb/InGaAs avalanche photodiode fabrication

Journal of Physics D: Applied Physics

IF3.2

2026-01-280

OAAI

Investigation of carrier dynamics by steady-state and transient photoluminescence for a quaternary InGaAsSb/GaAs multiple quantum wells heterostructure

通过稳态和瞬态光致发光研究四元InGaAsSb/GaAs多量子阱异质结构的载流子动力学

Journal of Alloys and Compounds

IF6.3

2025-10-100

PRE

Optical spin polarization by coherent magnetoabsorption generation

通过相干磁吸收产生的光学自旋极化

Nanoscale

IF5.1

2025-07-270

PRE

Study on exciton properties at single-layer and bilayer MoS2 boundary

单层和双层MoS2边界处激子特性的研究

OPTICS AND LASER TECHNOLOGY

IF5

2025-06-010

PRE

Optical characterization of the type-II hybrid nanostructure with the GaSb/GaAs quantum dots coupled to an InGaAs/GaAs quantum well

OPTICS EXPRESS

IF3.3

2025-02-110

Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures

体化合物和量子阱GaAsSb/GaAs异质结构中载流子局域化的研究

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2025-02-010

PRE

Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications

COMMUNICATIONS PHYSICS

IF5.8

2025-01-270

Why Sb2Se3/CdS Interface Produces Higher Power Conversion Efficiency

为什么Sb2Se3/CdS界面会产生更高的能量转换效率

JOURNAL OF PHYSICAL CHEMISTRY LETTERS

IF4.6

2025-01-230

PRE

Exciton properties of Sb2Se3 grown in different arrays

不同阵列生长的Sb2Se3的激子性质

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2025-01-010

PRE

Luminescence efficiency and carrier dynamics for InGaAs/GaAs surface quantum dots in coupled heterostructures

JOURNAL OF LUMINESCENCE

IF3.6

2024-11-010

PRE

Manipulating formation of different InGaAs/GaAs nanostructures via tailoring As4 flux

APPLIED PHYSICS LETTERS

IF3.6

2024-10-280

PRE

Impact ionization coefficients and excess noise in Al0.55Ga0.45As0.56Sb0.44 lattice matched to InP

APPLIED PHYSICS LETTERS

IF3.6

2024-06-181

Solvent-modulated luminescence of carbon dots for ion sensing and fingerprint detection

OPTICS EXPRESS

IF3.3

2024-03-190

Digital Alloy-Grown InAs/GaAs Short-Period Superlattices with Tunable Band Gaps for Short-Wavelength Infrared Photodetection

ACS PHOTONICS

IF6.7

2024-03-193

Tailoring Addition Sequence of Metal Ions in Precursor Solution Drives Highly Efficient Kesterite Solar Cells

前体溶液中金属离子的定制添加顺序驱动高效的Kesterite太阳能电池

ADVANCED FUNCTIONAL MATERIALS

IF19

2024-01-1410

PRE

Quantum projection ghost imaging: a photon-numberselection method [Invited]

量子投影鬼成像: 一种光子数选择方法 [特邀]

optics letters

IF2.8

2024-01-013

PRE

Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness

APPLIED SURFACE SCIENCE

IF6.9

2023-11-011

PRE

Very low excess noise Al0.75Ga0.25As0.56Sb0.44 avalanche photodiode

OPTICS EXPRESS

IF3.3

2023-09-195

Baolai Liang

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