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H

Hyun‐Yong Yu

korea university

28H指数
148论文数
3.2K被引数
收录论文 66
发表时间
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Unraveling In-Plane Crystallographic Anisotropy-Dependent Memory Performance In Van Der Waals α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors解耦范德华α-In2Se3铁电半导体场效应晶体管中面内晶体各向异性依赖的记忆性能
errAdvanced Materials
IF26.8
err2025-11-20
err0
PREAI
errJong-Hyun Kim; Seung-Hwan Kim; Hyeong-Kyu Jin; Deji Akinwande; Hyun-Yong Yu
err分享
err收藏
Enhanced reliability of HfO2-based conductive bridge random access memory through MgO insertion通过插入MgO提高HfO2基导电桥随机存取存储器的可靠性
errJournal of Alloys and Compounds
IF6.3
err2025-11-12
err0
errOAAI
errSi-Yeol Lee; Seung-Hwan Kim; In-Kook Hwang; Kwangkyo Jung; Hyun-Yong Yu; Hamin Park; Seung-heon Chris Baek
err分享
err收藏
Highly enhanced Schottky barrier heights in source/drain contacts of IGZO FETs using AZO-based MIS structures with post-interlayer deposition annealing (PIDA)采用后中间层沉积退火（PIDA）的AZO基MIS结构在IGZO FET的源/漏接触中实现了高度增强的肖特基势垒高度。
errApplied Surface Science
IF6.9
err2025-08-29
err0
PREAI
errSungjoo Song; Jongyoun Park; null Sangsu-Lee; Jeong-Kyu Kim; Jeonghoon Bae; Hyejung Choi; Hyun-Yong Yu
err分享
err收藏
First Implementation of Edge-Contacted α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors and their Application to Artificial Heterosynapse首次实现边缘接触的α-In₂Se₃铁电半导体场效应晶体管及其在人工异突触中的应用
errSmall
IF12.1
err2025-08-13
err0
PREAI
errJong-Hyun Kim; Seung-Hwan Kim; Euyjin Park; Hyung-Jun Kim; Jeong-Kyu Kim; Hyun-Yong Yu
err分享
err收藏
Multifunctional metamorphic III-V distributed bragg reflectors grown on si substrate for resonant cavity surface emitting devices多功能变体III-V族分布式布拉格反射器，用于在硅衬底上生长的谐振腔面发射器件
errPhotoniX
IF19.1
err2025-07-28
err0
errOAAI
errTsimafei Laryn; Rafael Jumar Chu; Yeonhwa Kim; Eunkyo Ju; Chunghyun Ahn; Hyun-Yong Yu; May Madarang; Hojoong Jung; Won Jun Choi; Daehwan Jung
err分享
err收藏
A novel AZO capping approach on SnO thin-film transistors for efficient threshold voltage modulation and electrical performance enhancement一种新型的AZO包覆方法用于SnO薄膜晶体管，以实现高效的阈值电压调制和电学性能提升
errApplied Surface Science
IF6.9
err2025-07-11
err0
PREAI
errJongyoun Park; Sungjoo Song; Seung Hwan Kim; Jong-Hyun Kim; Jeong-Kyu Kim; Hyun-Yong Yu
err分享
err收藏
Schottky Barrier Height engineering and electrical performance enhancement using ZnO as an interlayer in MIS contact structures for SnO thin-film transistors在SnO薄膜晶体管的MIS接触结构中使用ZnO作为中间层的肖特基势垒高度工程和电性能增强
errAPPLIED SURFACE SCIENCE
IF6.9
err2025-05-01
err0
PREAI
errPark, Jongyoun; Song, Sungjoo; Kim, Seung-Hwan; Han, Kyu Hyun; Kim, Jong-Hyun; Yu, Hyun-Yong
err分享
err收藏
Enhancement of the Proton-Electron Coupling Effect by an Ionic Oxide-Based Proton Reservoir for High-Performance Artificial Synaptic Transistors基于离子氧化物基质质子储库对高性能人工突触晶体管中质子-电子耦合效应的增强
errACS NANO
IF16
err2025-01-06
err1
PREAI
errKim, SH; Jin, DG; Kim, JH; Baek, D; Kim, HJ; Yu, HY
err分享
err收藏
Plasma Treatment Induced Charge Transfer for Realization of Negative Differential Transconductance in Van Der Waals Single-Channel等离子体处理诱导电荷转移实现范德华单通道负微分跨导
errADVANCED FUNCTIONAL MATERIALS
IF19
err2024-11-27
err0
PREAI
errHan, Kyu Hyun; Kim, Seung-Hwan; Kim, Jong-Hyun; Yu, Hyun-Yong
err分享
err收藏
Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe2) Transistor: Approaching Schottky-Mott Limit
errACS NANO
IF16
err2024-10-15
err0
PREAI
errPark, Euyjin; Kim, Seung-Hwan; Min, Seong-Ji; Han, Kyu-Hyun; Kim, Jong-Hyun; Kim, Seung-Geun; Ahn, Tae-Hang; Yu, Hyun-Yong
err分享
err收藏
Flexible sensing probe for the simultaneous monitoring of neurotransmitters imbalance用于同时监测神经递质失衡的柔性传感探头
errMicro and Nano Systems Letters
IF4
err2024-10-08
err0
errOAAI
errHye Bin Cha; Yao Zhang; Hyun-Yong Yu; Yi Jae Lee
err分享
err收藏
Enhanced Electrical Polarization in van der Waals α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors by Eliminating Surface Screening Charge通过消除表面屏蔽电荷来增强范德华 α-In2Se3铁电半导体场效应晶体管中的电极化
errSMALL
IF12.1
err2024-10-02
err0
PREAI
errKim, Jong-Hyun; Kim, Seung-Hwan; Yu, Hyun-Yong
err分享
err收藏
Dielectric interface engineering using aminosilane coupling agent for enhancement of negative differential resistance phenomenon
errMATERIALS TODAY ADVANCES
IF8
err2024-03-01
err1
errOAAI
errHan, Kyu Hyun; Kim, Seung-Geun; Kim, Seung-Hwan; Kim, Jong-Hyun; Hwang, Seong-Hyun; Kim, Min-Su; Song, Sung-Joo; Yu, Hyun-Yong
err分享
err收藏
Charge transfer mechanism for realization of double negative differential transconductance
errNPJ 2D MATERIALS AND APPLICATIONS
IF8.8
err2024-02-29
err2
errOAAI
errHan, Kyu Hyun; Kim, Seung-Hwan; Kim, Seung-Geun; Kim, Jong-Hyun; Song, Sungjoo; Yu, Hyun-Yong
err分享
err收藏
Performance Improvement in DRAM Cell Using Novel Nitride/Metal Spacers Structure
errIEEE ACCESS
IF3.6
err2024-01-01
err0
errOAAI
errJung, Seung-Geun; Min, Seong-Ji; Yu, Hyun-Yong
err分享
err收藏
First Demonstration of Yttria-Stabilized Hafnia-Based Long-Retention Solid-State Electrolyte-Gated Transistor for Human-Like Neuromorphic Computing首次演示基于氧化钇稳定的Hafnia的长保留固态电解质门控晶体管，用于类似人的神经形态计算
errSMALL
IF12.1
err2023-12-15
err1
PREAI
errJin, Dong-Gyu; Yu, Hyun-Yong
err分享
err收藏
In-Depth Analysis on Self Alignment Effect of the Fermi-Level Using Graphene on Both n- and p-Type Semiconductors
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2023-11-30
err3
PREAI
errSong, Sungjoo; Kim, Seung-Hwan; Han, Kyu-Hyun; Kim, Hyung-jun; Yu, Hyun-Yong
err分享
err收藏
A neural probe for concurrent real- time measurement of multiple neurochemicals with electrophysiology in multiple brain regions in vivo一种神经探针，用于在体内多个大脑区域中同时实时测量具有电生理功能的多种神经化学物质
errPROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
IF9.1
err2023-07-03
err15
errOAAI
errChae, Uikyu; Woo, Jiwan; Cho, Yakdol; Han, Jeong- Kyu; Yang, Soo Hyun; Yang, Esther; Shin, Hyogeun; Kim, Hyun; Yu, Hyun- Yong; Lee, C. Justin; Cho, Il-Joo
err分享
err收藏
Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide基于二氧化钒绝缘体-金属相变的高调谐负微分电阻器件
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2023-06-20
err1
PREAI
errKim, Jong-Hyun; Kim, Seung-Geun; Kim, Seung-Hwan; Han, Kyu-Hyun; Kim, Jiyoung; Yu, Hyun-Yong
err分享
err收藏
Improvement of polarization switching in ferroelectric transistor by interface trap reduction for brain-inspired artificial synapses通过减少脑启发的人工突触的界面陷阱来改善铁电晶体管中的极化切换
errMATERIALS TODAY NANO
IF8.2
err2023-06-01
err13
errOAAI
errJin, D. -G.; Kim, S. -G.; Jeon, H.; Park, E. -J.; Kim, S. -H.; Kim, Y-Y.; Yu, H. -Y.
err分享
err收藏

研究方向

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合作学者
合作期刊
D
David A. B. Miller
H 指数: 94 · 论文数: 979
J
Jae Wook Lee
H 指数: 93 · 论文数: 2.3K
K
Krishna C. Saraswat
H 指数: 85 · 论文数: 797
刘娜 封面图
刘娜 (Na Liu)
H 指数: 82 · 论文数: 530
J
Jelena Vučković
H 指数: 80 · 论文数: 777
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