Peter Kleinschmidt - Publications, H-index & Citations

Peter Kleinschmidt

technische universitat ilmenau

27H指数

198论文数

2.2K被引数

收录论文 40

发表时间

Atomic surface structure of antiphase domains in heteroepitaxial GaP films grown on arsenic-terminated Si(100)异质外延GaP薄膜中反相畴的原子表面结构，生长在砷终止的Si(100)上

Journal of Crystal Growth

IF2

2025-12-01

OAAI

Kleinschmidt, P.; Bratek, D.; Nandy, M.; Koch, J.; Chejarla, V. S.; Beyer, A.; Hanke, K. D.; Volz, K.; Paszuk, A.; Hannappel, T.

Pattern Fidelity of Vertically Aligned GaAs Nanowire Arrays 垂直排列的GaAs纳米线阵列的模式保真度

Small

IF12.1

2025-10-14

OAAI

Juliane Koch; Jiajia Qiu; Chris Yannic Bohlemann; David Ostheimer; Huaping Zhao; Peter Kleinschmidt; Yong Lei; Thomas Hannappel

Exploring the Role of III-V Semiconductor-Based Nanowire Composition and Geometry on Photoelectrochemical Reactions 探索基于III-V半导体纳米线的组成和几何结构对光电化学反应的影响

ADVANCED ENERGY AND SUSTAINABILITY RESEARCH

IF5.7

2025-09-01

OAAI

Koch, Juliane; Bohlemann, Chris Yannic; Shekarabi, Sahar; Ostheimer, David; Kleinschmidt, Peter; Hannappel, Thomas

Following Charge Carrier Transport in Freestanding Core-Shell GaN Nanowires on n-Si(111) Substrates

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2025-04-01

OAAI

Koch, Juliane; Haeuser, Patrick; Kleinschmidt, Peter; Liborius, Lisa; Weimann, Nils; Hannappel, Thomas

Surface structure of MOVPE-prepared As-modified Si(100) substrates MOVPE制备的As改性Si(100) 衬底的表面结构

APPLIED SURFACE SCIENCE

IF6.9

2024-11-01

OAAI

Bohlemann, Chris Yannic; Floetotto, Aaron; Paszuk, Agnieszka; Nandy, Manali; Grossmann, Max; Romanyuk, Oleksandr; Hanke, Kai Daniel; Giess, Aaron; Kleinschmidt, Peter; Runge, Erich; Hannappel, Thomas

Tracking Charge Carrier Paths in Freestanding GaN/AlN Nanowires on Si(111)在Si(111) 上的独立GaN/AlN纳米线中跟踪电荷载流子路径

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-09-19

OAAI

Koch, Juliane; Haeuser, Patrick; Kleinschmidt, Peter; Prost, Werner; Weimann, Nils; Hannappel, Thomas

Impact of the Tip-to-Semiconductor Contact in the Electrical Characterization of Nanowires

ACS OMEGA

IF4.3

2024-01-24

OAAI

Koch, Juliane; Liborius, Lisa; Kleinschmidt, Peter; Prost, Werner; Weimann, Nils; Hannappel, Thomas

Optical In Situ Studies of Ge(100) Interfacial Exchange Reactions in GaAs-Rich MOVPE Reactors for Low-Defect III-P Growth

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-02-09

PREAI

Nandy, Manali; Paszuk, Agnieszka; Hanke, Kai Daniel; Kleinschmidt, Peter; Hannappel, Thomas

Structure and Origin of Antiphase Domains and Related Defects in Thin GaP Epilayers on As-Modified Si(100)

CRYSTAL GROWTH & DESIGN

IF3.4

2022-11-17

PREAI

Borkenhagen, Benjamin; Paszuk, Agnieszka; Knoop, Franz Niklas; Supplie, Oliver; Nandy, Manali; Lilienkamp, Gerhard; Kleinschmidt, Peter; Hannappel, Thomas; Daum, Winfried

Electrical Properties of the Base-Substrate Junction in Freestanding Core-Shell Nanowires

ADVANCED MATERIALS INTERFACES

IF4.4

2022-09-09

OAAI

Koch, Juliane; Liborius, Lisa; Kleinschmidt, Peter; Weimann, Nils; Prost, Werner; Hannappel, Thomas

Atomic surface control of Ge(100) in MOCVD reactors coated with (Ga)As residuals

APPLIED SURFACE SCIENCE

IF6.9

2021-11-01

PREAI

Paszuk, Agnieszka; Supplie, Oliver; Brueckner, Sebastian; Barrigon, Enrique; May, Matthias M.; Nandy, Manali; Giess, Aaron; Dobrich, Anja; Kleinschmidt, Peter; Rey-Stolle, Ignacio; Hannappel, Thomas

Band bending at heterovalent interfaces: Hard X-ray photoelectron spectroscopy of GaP/Si(001) heterostructures

APPLIED SURFACE SCIENCE

IF6.9

2021-11-01

PREAI

Romanyuk, O.; Paszuk, A.; Bartos, I; Wilks, R. G.; Nandy, M.; Bombsch, J.; Hartmann, C.; Felix, R.; Ueda, S.; Gordeev, I; Houdkova, J.; Kleinschmidt, P.; Machek, P.; Baer, M.; Jiricek, P.; Hannappel, T.

A Route to Obtaining Low-Defect III-V Epilayers on Si(100) Utilizing MOCVD

CRYSTAL GROWTH & DESIGN

IF3.4

2021-08-23

PREAI

Nandy, Manali; Paszuk, Agnieszka; Feifel, Markus; Koppka, Christian; Kleinschmidt, Peter; Dimroth, Frank; Hannappel, Thomas

Atomic surface structure of MOVPE-prepared GaP(111)B MOVPE制备的GaP(111)B的原子表面结构

APPLIED SURFACE SCIENCE

IF6.9

2020-12-01

PREAI

Kleinschmidt, P.; Mutombo, P.; Berthold, T.; Paszuk, A.; Steidl, M.; Ecke, G.; Naegelein, A.; Koppka, C.; Supplie, O.; Krischok, S.; Romanyuk, O.; Himmerlich, M.; Hannappel, T.

Quantification of the As/P content in GaAsP during MOVPE growth

APPLIED PHYSICS LETTERS

IF3.6

2020-08-10

PREAI

Supplie, Oliver; Heinisch, Alexander; Paszuk, Agnieszka; Nandy, Manali; Tummalieh, Ammar; Kleinschmidt, Peter; Sugiyama, Masakazu; Hannappel, Thomas

Spatially resolved analysis of dopant concentration in axial GaAs NW pn-contacts

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2019-08-01

PREAI

Nagelein, Andreas; Timm, Cornelia; Schwarzburg, Klaus; Steidl, Matthias; Kleinschmidt, Peter; Hannappel, Thomas

Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH

NANOSCALE RESEARCH LETTERS

IF4.1

2018-12-29

OAAI

Steidl, Matthias; Wu, Mingjian; Peh, Katharina; Kleinschmidt, Peter; Spiecker, Erdmann; Hannappel, Thomas

Mechanism of twin-reduced III-V epitaxy on As-modified vicinal Si(111)

PHYSICAL REVIEW MATERIALS

IF3.4

2018-12-03

PREAI

Winterfeld, Lars; Koppka, Christian; Abou-Ras, Daniel; Kleinschmidt, Peter; Supplie, Oliver; Hannappel, Thomas; Runge, Erich

Double-layer stepped Si(100) surfaces prepared in As-rich CVD ambience

APPLIED SURFACE SCIENCE

IF6.9

2018-12-01

PREAI

Paszuk, Agnieszka; Supplie, Oliver; Nandy, Manali; Brueckner, Sebastian; Dobrich, Anja; Kleinschmidt, Peter; Kim, Boram; Nakano, Yoshiaki; Sugiyama, Masakazu; Hannappel, Thomas

Investigation of charge carrier depletion in freestanding nanowires by a multi-probe scanning tunneling microscope

NANO RESEARCH

IF9

2018-06-11

PREAI

Naegelein, Andreas; Steidl, Matthias; Korte, Stefan; Voigtlaender, Bert; Prost, Werner; Kleinschmidt, Peter; Hannappel, Thomas

研究方向