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Yannan Yang

fudan university

H指数:6

被引数:78

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Dual-Powered Nanomotor In Situ Vaccine with Tumor-Confined Penetration and Acidity Neutralization Boosts Stimulator of Interferon Genes-Mediated Immunotherapy

IF16

2026-01-010

PRE

In situ hydrogen and nitrogen radicals surface modification of aluminum gallium nitride for high-performance aluminum gallium Nitride/Gallium nitride MIS-HEMTs fabrication

原位氢和氮自由基表面改性铝镓氮，用于高性能铝镓氮/氮化镓MIS-HEMTs的制备

APPLIED SURFACE SCIENCE

IF6.9

2025-07-010

PRE

A study on the high-temperature air oxidation and liquid sodium corrosion behaviors of 316H steel at 700 °C

JOURNAL OF MATERIALS SCIENCE

IF3.9

2025-04-010

PRE

Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment

通过采用交替O2等离子体处理改善GaN基mis-hemt的Vth稳定性和栅极可靠性

IF4.3

2024-03-142

OAAI

O2 Plasma Alternately Treated ALD-Al2O3 as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

IF3.6

2024-01-014

OA

NH3/N2 plasma treatment on etched AlGaN surface for high-performance p-GaN HEMTs fabrication

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-11-013

PRE

A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication

一种用于高性能p-gan栅极hemt制造的新型原子级蚀刻后表面增强工艺

IF4.3

2023-08-082

OAAI

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

SiC上的非缓冲epi-algan/GaN用于高性能耗尽型mis-hemt制造

IF3

2023-07-291

OAAI

In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication

IF3

2023-06-211

OAAI

High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application

IF3

2022-04-0913

OAAI