Saisheng Xu

fudan university

H指数:11

被引数:379

个人简介

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In situ hydrogen and nitrogen radicals surface modification of aluminum gallium nitride for high-performance aluminum gallium Nitride/Gallium nitride MIS-HEMTs fabrication

原位氢和氮自由基表面改性铝镓氮，用于高性能铝镓氮/氮化镓MIS-HEMTs的制备

APPLIED SURFACE SCIENCE

IF6.9

2025-07-010

PRE

Dipole engineering at HfO2/SiO2 interface by ultra-thin Al2O3 to modulate flat-band voltage for cryogenic temperatures

VACUUM

IF3.9

2025-04-010

PRE

A Comprehensive Study of NF3-Based Selective Etching Processes: Application to the Fabrication of Vertically Stacked Horizontal Gate-All-around Si Nanosheet Transistors

NF3-Based选择性蚀刻工艺的综合研究: 在垂直堆叠水平栅极全包围Si纳米片晶体管的制造中的应用

NANOMATERIALS

IF4.3

2024-05-240

OAAI

NH3/N2 plasma treatment on etched AlGaN surface for high-performance p-GaN HEMTs fabrication

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-11-013

PRE

A Buried Thermal Rail (BTR) Technology to Improve Electrothermal Characteristics of Complementary Field-Effect Transistor (CFET)

一种用于改善互补场效应晶体管 (CFET) 电热特性的掩埋热轨 (BTR) 技术

MICROMACHINES

IF3

2023-09-072

OAAI

A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication

一种用于高性能p-gan栅极hemt制造的新型原子级蚀刻后表面增强工艺

NANOMATERIALS

IF4.3

2023-08-082

OAAI

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

SiC上的非缓冲epi-algan/GaN用于高性能耗尽型mis-hemt制造

MICROMACHINES

IF3

2023-07-291

OAAI

In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication

MICROMACHINES

IF3

2023-06-211

OAAI

A Novel Scheme for Full Bottom Dielectric Isolation in Stacked Si Nanosheet Gate-All-Around Transistors

堆叠硅纳米片栅环绕式晶体管全底介质隔离的新方案

MICROMACHINES

IF3

2023-05-243

OAAI

Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device

全环栅器件沟道释放过程中应力及尺寸对纳米片变形的影响

MICROMACHINES

IF3

2023-03-072

OAAI

A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation

一种新型Si纳米片沟道释放工艺制备栅环绕式晶体管及其机理研究

NANOMATERIALS

IF4.3

2023-01-277

OAAI

Source/Drain Trimming Process to Improve Gate-All-Around Nanosheet Transistors Switching Performance and Enable More Stacks of Nanosheets

源极/漏极修整工艺，可提高栅极全环纳米片晶体管的开关性能，并实现更多纳米片堆叠

MICROMACHINES

IF3

2022-07-082

OAAI

High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application

MICROMACHINES

IF3

2022-04-0913

OAAI

Influence of NH3 annealing on the chemical states of HfO2/Al2O3 stacks studied by X-ray photoelectron spectroscopy

NH3退火对x射线光电子能谱研究的HfO2/Al2O3叠层化学态的影响

VACUUM

IF3.9

2016-02-015

PREAI

Bandgap narrowing and conductivity evolution of atomic-layer-deposited ZnO:Cu thin films under rapid thermal annealing

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2015-07-0123

PREAI

Structural, optical, and electrical properties of Hf-doped ZnO films deposited by atomic layer deposition

SURFACE & COATINGS TECHNOLOGY

IF6.1

2013-10-0138

PREAI

Energy band alignment of InGaZnO4/Si heterojunction determined by x-ray photoelectron spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2012-12-2113

PREAI

Influence of Al Doping on the Properties of ZnO Thin Films Grown by Atomic Layer Deposition

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2011-06-0394

PREAI

Saisheng Xu

个人简介

教育背景

工作经历

荣誉奖项

研究方向