Simon D. Elliott

schrödinger gmbh, 63163 mannheim, germany

H指数:35

被引数:4,517

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Atomic Layer Deposition of NiOx: Harnessing the Potential of New Precursor Combinations for Photoelectrochemical Water Oxidation

NiOx的原子层沉积：利用新型前驱体组合的潜力用于光电化学水氧化

J. Mater. Chem. A

IF9.5

2025-11-050

OAAI

Finding the temperature window for atomic layer deposition of ruthenium metal via efficient phonon calculations

通过高效的声子计算确定钌金属原子层沉积的温度窗口

Phys. Chem. Chem. Phys.

IF0

2025-10-140

PRE

Prediction and Validation of the Process Window for Atomic Layer Etching: HF Exposure on TiO2

原子层蚀刻工艺窗口的预测和验证: TiO2上的HF暴露

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2021-11-1211

PRE

Combining Experimental and DFT Investigation of the Mechanism Involved in Thermal Etching of Titanium Nitride Using Alternate Exposures of NbF5 and CCl4, or CCl4 Only

ADVANCED MATERIALS INTERFACES

IF4.4

2021-10-224

PREAI

Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride (NbF5) and Carbon Tetrachloride (CCl4): A Combined Experimental and Density Functional Theory Study of the Etch Mechanism

CHEMISTRY OF MATERIALS

IF7

2021-04-0914

OAAI

A Secondary Reaction Pathway for the Alumina Atomic Layer Deposition Process with Trimethylaluminum and Water, Revealed by Full-Range, Time-Resolved In Situ Mass Spectrometry

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2020-11-209

OAAI

Atomic Layer Deposition of Localized Boron- and Hydrogen-Doped Aluminum Oxide Using Trimethyl Borate as a Dopant Precursor

使用硼酸三甲酯作为掺杂剂前体的局部硼和氢掺杂氧化铝的原子层沉积

CHEMISTRY OF MATERIALS

IF7

2020-04-233

OAAI

Self-Limiting Temperature Window for Thermal Atomic Layer Etching of HfO2 and ZrO2 Based on the Atomic-Scale Mechanism

CHEMISTRY OF MATERIALS

IF7

2020-04-0221

OAAI

Quantifying the Extent of Ligand Incorporation and the Effect on Properties of TiO2 Thin Films Grown by Atomic Layer Deposition Using an Alkoxide or an Alkylamide

CHEMISTRY OF MATERIALS

IF7

2020-01-2351

OAAI

Kinetic Monte Carlo Study of the Atomic Layer Deposition of Zinc Oxide

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2018-10-3021

PREAI

Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide: A Density Functional Theory Study of Reactions during HF Exposure

CHEMISTRY OF MATERIALS

IF7

2018-08-0942

PREAI

Understanding the Mechanism of SiC Plasma-Enhanced Chemical Vapor Deposition (PECVD) and Developing Routes toward SiC Atomic Layer Deposition (ALD) with Density Functional Theory

用密度泛函理论理解SiC等离子体增强化学气相沉积 (PECVD) 的机理和SiC原子层沉积 (ALD) 的发展路线

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2018-04-1028

PREAI

Suppressing the Thermal and Ultraviolet Sensitivity of Kevlar by Infiltration and Hybridization with ZnO

CHEMISTRY OF MATERIALS

IF7

2017-11-1658

PREAI

Reversible and Irreversible Reactions of Trimethylaluminum with Common Organic Functional Groups as a Model for Molecular Layer Deposition and Vapor Phase Infiltration

ADVANCED MATERIALS INTERFACES

IF4.4

2017-05-0243

OAAI

Classification of processes for the atomic layer deposition of metals based on mechanistic information from density functional theory calculations

JOURNAL OF CHEMICAL PHYSICS

IF3.1

2017-02-0334

OAAI

Kinetics and Coverage Dependent Reaction Mechanisms of the Copper Atomic Layer Deposition from Copper Dimethylamino-2-propoxide and Diethylzinc

CHEMISTRY OF MATERIALS

IF7

2016-08-1915

OAAI

Modeling Mechanism and Growth Reactions for New Nanofabrication Processes by Atomic Layer Deposition

通过原子层沉积的新型纳米制造工艺的建模机理和生长反应

ADVANCED MATERIALS

IF26.8

2015-12-2172

PREAI

Quantum Chemical Study of the Effect of Precursor Stereochemistry on Dissociative Chemisorption and Surface Redox Reactions During the Atomic Layer Deposition of the Transition Metal Copper (vol 119, pg 5914, 2015)

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2015-04-280

PREAI

Precursor Adsorption on Copper Surfaces as the First Step during the Deposition of Copper: A Density Functional Study with van der Waals Correction

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2015-04-1617

OAAI

Quantum Chemical Study of the Effect of Precursor Stereochemistry on Dissociative Chemisorption and Surface Redox Reactions During the Atomic Layer Deposition of the Transition Metal Copper

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2015-03-1116

OAAI

Simon D. Elliott

个人简介

教育背景

工作经历

荣誉奖项

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