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R

Ryoichi Ishihara

delft university of technology

22H指数
212论文数
2.5K被引数
收录论文 26
发表时间
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A Compact Low-Power Cryo-CMOS Readout With Active Quenching for Superconducting Nanowire Single-Photon Detectors紧凑型低功耗低温CMOS读出电路，具有主动淬灭功能，用于超导纳米线单光子探测器
errIEEE Journal of Solid-State Circuits
IF5.6
err2026-04-10
err0
errOAAI
errGiovanni Carboni; Jad Benserhir; Maoran Li; Lin Jin; Marinus C. van der Maas; Luc Enthoven; Jan Riegelmeyer; Ryoichi Ishihara; Carlos Errando-Herranz; Masoud Babaie; Fabio Sebastiano
err分享
err收藏
On-chip band-stop filter using multimode waveguide Bragg grating in alumina visible-light waveguides基于氧化铝可见光波导中多模波导布拉格光栅的片上带阻滤波器
errJapanese Journal of Applied Physics
IF1.8
err2026-01-30
err0
PREAI
errKitagawa, Ryota; Yamaguchi, Takuto; Fushimi, Naoki; Hida, Masaharu; Miyatake, Tetsuya; Miyazawa, Toshiyuki; Kawaguchi, Kenichi; Ishihara, Ryoichi; Sato, Shintaro
err分享
err收藏
Efficient implementation of the Hodgkin-Huxley potassium channel via a single volatile memristor通过单个易失性忆阻器对Hodgkin-Huxley钾通道的高效实现
errFrontiers in Neuroscience
IF3.2
err2025-08-05
err0
errOAAI
errLennart P. L. Landsmeer; Erbing Hua; Heba Abunahla; Muhammad Ali Siddiqi; Ryoichi Ishihara; Chris I. De Zeeuw; Said Hamdioui; Christos Strydis
err分享
err收藏
Transformer models for quantum gate set tomography
errQUANTUM MACHINE INTELLIGENCE
IF4.4
err2025-01-21
err0
errOAAI
errYu, King Yiu; Sarkar, Aritra; Rimbach-Russ, Maximilian; Ishihara, Ryoichi; Feld, Sebastian
err分享
err收藏
On-chip integration of Si/SiGe-based quantum dots and switched-capacitor circuits
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-10-06
err12
errOAAI
errXu, Y.; Unseld, F. K.; Corna, A.; Zwerver, A. M. J.; Sammak, A.; Brousse, D.; Samkharadze, N.; Amitonov, S. V.; Veldhorst, M.; Scappucci, G.; Ishihara, R.; Vandersypen, L. M. K.
err分享
err收藏
Temperature dependence of hole transport properties through physically defined silicon quantum dots
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-08-31
err6
PREAI
errShimatani, N.; Yamaoka, Y.; Ishihara, R.; Andreev, A.; Williams, D. A.; Oda, S.; Kodera, T.
err分享
err收藏
Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-08-19
err6
PREAI
errHiraoka, S.; Horibe, K.; Ishihara, R.; Oda, S.; Kodera, T.
err分享
err收藏
Solution-based polycrystalline silicon transistors produced on a paper substrate
errNPJ FLEXIBLE ELECTRONICS
IF15.5
err2017-12-13
err11
errOAAI
errTrifunovic, Miki; Sberna, Paolo Maria; Shimoda, Tatsuya; Ishihara, Ryoichi
err分享
err收藏
Interfacing spin qubits in quantum dots and donors-hot, dense, and coherent
errNPJ QUANTUM INFORMATION
IF8.3
err2017-09-06
err431
errOAAI
errVandersypen, L. M. K.; Bluhm, H.; Clarke, J. S.; Dzurak, A. S.; Ishihara, R.; Morello, A.; Reilly, D. J.; Schreiber, L. R.; Veldhorst, M.
err分享
err收藏
Solution-Based Fabrication of Polycrystalline Si Thin-Film Transistors from Recycled Polysilanes
errACS SUSTAINABLE CHEMISTRY & ENGINEERING
IF7.3
err2017-06-14
err11
errOAAI
errSberna, Paolo M.; Trifunovic, Mild; Ishihara, Ryoichi
err分享
err收藏
Flexible ultrathin-body single-photon avalanche diode sensors and CMOS integration
errOPTICS EXPRESS
IF3.3
err2016-02-16
err10
errOAAI
errSun, Pengfei; Ishihara, Ryoichi; Charbon, Edoardo
err分享
err收藏
Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers准分子激光退火对溶液处理混合钝化层钝化的InGaZnO薄膜晶体管的影响
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2015-12-22
err19
PREAI
errBermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N.; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi; Uraoka, Yukiharu
err分享
err收藏
Solution-processed polycrystalline silicon on paper
errAPPLIED PHYSICS LETTERS
IF3.6
err2015-04-21
err36
errOAAI
errTrifunovic, M.; Shimoda, T.; Ishihara, R.
err分享
err收藏
A Flexible Ultrathin-Body Single-Photon Avalanche Diode With Dual-Side Illumination
errIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
IF5.1
err2014-11-01
err9
PREAI
errSun, Pengfei; Charbon, Edoardo; Ishihara, Ryoichi
err分享
err收藏
Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications
errAPL MATERIALS
IF4.5
err2014-10-17
err5
errOAAI
errGolshani, Negin; Mohammadi, V.; Schellevis, H.; Beenakker, C. I. M.; Ishihara, R.
err分享
err收藏
Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-06-18
err21
errOAAI
errZhang, J.; Trifunovic, M.; van der Zwan, M.; Takagishi, H.; Kawajiri, R.; Shimoda, T.; Beenakker, C. I. M.; Ishihara, R.
err分享
err收藏
Thermal conductivity of low temperature grown vertical carbon nanotube bundles measured using the three-ω method
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-05-15
err6
errOAAI
errVollebregt, Sten; Banerjee, Sourish; Beenakker, Kees; Ishihara, Ryoichi
err分享
err收藏
Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-03-26
err49
errOAAI
errFujii, Mami; Ishikawa, Yasuaki; Ishihara, Ryoichi; van der Cingel, Johan; Mofrad, Mohammad R. T.; Horita, Masahiro; Uraoka, Yukiharu
err分享
err收藏
Investigation of local electrical properties of coincidence-site-lattice boundaries in location-controlled silicon islands using scanning capacitance microscopy
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-08-11
err20
errOAAI
errMatsuki, Nobuyuki; Ishihara, Ryoichi; Baiano, Alessando; Beenakker, Kees
err分享
err收藏
Simulation of twin boundary effect on characteristics of single grain-silicon thin film transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-08-14
err3
errOAAI
errYan, F.; Migliorato, P.; Ishihara, R.
err分享
err收藏

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Feng YAN 封面图
Feng YAN (Feng Yan)
H 指数: 121 · 论文数: 1.3K
C
Chris I. De Zeeuw
H 指数: 103 · 论文数: 539
L
Lieven M. K. Vandersypen
H 指数: 67 · 论文数: 350
E
Edoardo Charbon
H 指数: 65 · 论文数: 840
D
D. A. Williams
H 指数: 58 · 论文数: 463
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