logo
科言猫学术研究的AI总结
language
手机端手机端
  • Phone Feature微信小程序
简体中文简体中文
notice消息通知
博客博客
delete
arrow
返回
M

Min Hyuk Park

seoul national university

59H指数
193论文数
1.4W被引数
收录论文 105
发表时间
logo
Oxygen-Vacancy-Regulated Crystallization and Ferroelectric Phase Stabilization in Hf0.5Zr0.5O2 Thin Films氧空位调控的Hf0.5Zr0.5O2薄膜结晶与铁电相稳定化
errAdvanced Functional Materials
IF19
err2026-09-07
err0
errOAAI
errHyun Woo Jeong; Jaewook Lee; Junseong Seo; Hyojun Choi; Dong Hee Han; Seungjae Heo; Tae-Yeol Jeon; Yunseok Kim; Younghwan Lee; Min Hyuk Park
err分享
err收藏
Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy-Efficient Physical Reservoir Computing易失性ZrO2反铁电隧穿结用于快速、节能的物理存储器计算
errAdvanced Science
IF14.1
err2026-07-28
err0
errOAAI
errTaegyu Kwon; Moonseek Jeong; Su In Hwang; Geun Hyeong Park; Joonyong Kim; Hyojun Choi; Hyeong Seok Choi; Da Hyun Kim; Dong Hee Han; Ju Yong Park; Seungho Baek; Jung Ho Yoon; Dong Hyun Lee; Min Hyuk Park
err分享
err收藏
Wake-Up and Fatigue under Electrical Cycling in HfO2-Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices电循环下HfO2基铁电体的唤醒与疲劳现象：可靠器件的机制与策略
errAdvanced Science
IF14.1
err2026-07-28
err0
errOAAI
errHongseok Kim; Shinhyeong Lee; Hyojun Choi; Minseung Park; Hyunah Cho; Min Hyuk Park; Yunseok Kim
err分享
err收藏
Self-rectifying memristor crossbar arrays enabling energy-efficient multiply–accumulate for on/off-chip neuromorphic computing自整流忆阻器交叉阵列实现高效乘累加运算，用于片上/片外神经形态计算
errAdvanced Composites and Hybrid Materials
IF21.8
err2026-04-24
err0
errOAAI
errHyun Kyu Seo; Jae-Seung Jeong; Jaeho Jung; Min Hyuk Park; Gun Hwan Kim; Min Kyu Yang
err分享
err收藏
Forced-Convection Porous Hydrogel Platform for Rapid miRNA Detection强制对流多孔水凝胶平台用于快速miRNA检测
errAnalytical Chemistry
IF6.7
err2026-04-07
err0
PREAI
errChan Woo Park; Min Hyuk Park; Jun Hyun Park; Taehoon Kim; Jae Jung Kim
err分享
err收藏
Programmable ferroelectric rectifier for reliable and efficient neuromorphic crossbar array可编程铁电整流器用于可靠且高效的计算神经网络交叉阵列
errNature Communications
IF15.7
err2026-03-17
err0
errOAAI
errYoungmin Kim; Yoon Jung Lee; Jiwoong Yang; Byungsoo Kim; Seung Ju Kim; Jaehyun Kim; Inhyuk Im; Jae Young Kim; He Rui; Haesung Kim; Chung Wung Bark; Min Hyuk Park; Dae Hwan Kim; Sung-Jin Choi; J. Joshua Yang; Sanghan Lee; Ho Won Jang
err分享
err收藏
In Situ Transmission Electron Microscopy Visualization of Electric-Field-Induced Phase Transitions at the Morphotropic Phase Boundary in Hf0.5Zr0.5O2原位透射电子显微镜可视化观察电场诱导的相变在Hf0.5Zr0.5O2的形态转变相界处
errACS Nano
IF16
err2026-02-18
err0
PREAI
errSanghyo Lee; Sojin Kim; Jinseok Ryu; Jaewook Lee; Jinseok Hong; Ji Eun Kim; Ju-Young Cha; Yunho Shin; Daewoong Kwon; Jung Ho Yoon; Min Hyuk Park; Miyoung Kim; Seung-Yong Lee
err分享
err收藏
Selector-only-memory device using chalcogenide thin film in a 4k crossbar array仅含选择器的存储器件，采用硫属化合物薄膜在4k交叉阵列中
errMaterials Science and Engineering: R: Reports
IF0
err2025-12-19
err0
PREAI
errHyun Kyu Seo; Won Hee Jeong; Jaeho Jung; Min Hyuk Park; Gun Hwan Kim; Min Kyu Yang
err分享
err收藏
Enhancing remnant polarization in ferroelectric Hf0.5Zr0.5O2 thin films by oxygen-diffusive interlayers通过氧扩散中间层增强铁电Hf0.5Zr0.5O2薄膜的剩余极化强度
errJ. Mater. Chem. C
IF0
err2025-11-18
err0
PREAI
errUtaek Cho; Joonyong Kim; Taegyu Kwon; Pyeongkang Hur; Daseob Yoon; Min Hyuk Park; Junwoo Son
err分享
err收藏
Domain-Wall-Free Sliding Ferroelectricity in Fully Commensurate 3R Transition Metal Dichalcogenide Bilayers无畴壁滑移铁电性：完全共格3R过渡金属二硫族化合物双层的案例
errAdvanced Functional Materials
IF19
err2025-10-28
err0
errOAAI
errJi-Hwan Baek; Seong Chul Hong; Jinwoo Kim; Hyeongseok Lee; Hyun Woo Jeong; Kenji Watanabe; Takashi Taniguchi; Min Hyuk Park; Gwan-Hyoung Lee
err分享
err收藏
Reliability of HfO2-based FeFET memoryHfO2基FeFET存储器的可靠性
errMRS Bulletin
IF4.9
err2025-09-16
err0
PREAI
errReika Ichihara; Milan D. Pešić; Yusuke Higashi; Min Hyuk Park
err分享
err收藏
HfO2-based thin films and devicesHfO2基薄膜与器件
errJournal of Materiomics
IF9.6
err2025-09-08
err0
errOAAI
errXiaoguang Li; Min Hyuk Park; Ji-Yan Dai; Yuewei Yin
err分享
err收藏
Ferroelectric Quantum Dots for Retinomorphic In-Sensor Computing铁电量子点用于视网膜形态传感器内计算
errAdvanced Materials
IF26.8
err2025-08-23
err0
errOAAI
errTingyu Long; Huanyu Zhou; Jaewan Ko; Hongwei Tan; Jaemin Lim; Yanfei Zhao; Daehan Kang; Eojin Yoon; Gyeong-Tak Go; Somin Kim; Seung-Woo Lee; Chan-Yul Park; Hyojun Choi; Hyeran Kim; Hyung Joong Yun; Sung Hyuk Park; Kwan Sik Park; Jeong Woo Park; Mungeun Kim; Yong Soo Cho; Ho Won Jang; Wenqiang Yang; Min Hyuk Park; Wan Ki Bae; Sebastiaan van Dijken; Joona Bang; Tae-Woo Lee
err分享
err收藏
Utilization of oxygen content modulated Ru electrode to examine the interfacial redox chemistry of ferroelectric Hf0.5Zr0.5O2利用氧含量调制的Ru电极研究铁电Hf0.5Zr0.5O2的界面氧化还原化学
errJournal of Materiomics
IF9.6
err2025-07-25
err0
errOAAI
errKun Yang; Hyojun Choi; Ji Sang Ahn; Eun Ji Ju; Dong In Han; Se Hyun Kim; Ju Yong Park; Heejin Hong; Kwan Hyun Park; Jeong Hwan Han; Min Hyuk Park
err分享
err收藏
Enhancement of electrical properties of morphotropic phase boundary in Hf1-xZrxO2 films by integrating Mo electrode and TiN interlayer for DRAM capacitors通过集成Mo电极和TiN中间层改善Hf1-xZrxO2薄膜中准同型相界处的电学性能，用于DRAM电容器
errAPPLIED SURFACE SCIENCE ADVANCES
IF8.7
err2025-06-01
err2
PREAI
errJu Yong Park; Hyojun Choi; Jaewook Lee; Kun Yang; Sun Young Lee; Dong In Han; Intak Jeon; Chang Hwa Jung; Hanjin Lim; Woongkyu Lee; Min Hyuk Park
err分享
err收藏
Temperature-Dependent {111}-Texture Transfer to Hf0.5Zr0.5O2 Films from {111}-Textured TiN Electrode and Its Impact on Ferroelectricity温度依赖的{111}织构从{111}织构的TiN电极向Hf0.5Zr0.5O2薄膜的转移及其对铁电性的影响
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2025-03-28
err0
errOAAI
errHan, DH; Kim, SY; Jeong, HW; Lee, YH; Kim, YY; Jeon, W; Park, MH
err分享
err收藏
Atomic-Level Stoichiometry Control of Ferroelectric HfxZryOz Thin Films by Understanding Molecular-Level Chemical Physical Reactions通过理解分子层面的化学物理反应对铁电HfxZryOz薄膜进行原子级化学计量比控制
errACS NANO
IF16
err2025-01-15
err0
PREAI
errTrinh, NL; Gu, B; Yang, K; Nguyen, CT; Lee, B; Kim, HM; Kim, H; Kang, Y; Park, MH; Lee, HBR
err分享
err收藏
HfO2-based ferroelectric synaptic devices: challenges and engineering solutions (vol 61, pg 3061, 2025)
errCHEMICAL COMMUNICATIONS
IF4.2
err2025-01-01
err0
errOAAI
errKwon, Taegyu; Choi, Hyeong Seok; Lee, Dong Hyun; Han, Dong Hee; Cho, Yong Hyeon; Jeon, Intak; Jung, Chang Hwa; Lim, Hanjin; Moon, Taehwan; Park, Min Hyuk
err分享
err收藏
Two-Terminal Neuromorphic Devices for Spiking Neural Networks: Neurons, Synapses, and Array Integration用于尖峰神经网络的两端神经形态设备: 神经元，突触和阵列集成
errACS NANO
IF16
err2024-12-12
err0
PREAI
errKim, Youngmin; Baek, Ji Hyun; Im, In Hyuk; Lee, Dong Hyun; Park, Min Hyuk; Jang, Ho Won
err分享
err收藏
2D materials-based crossbar array for neuromorphic computing hardware用于神经形态计算硬件的基于2D材料的交叉阵列
errNEUROMORPHIC COMPUTING AND ENGINEERING
IF6.1
err2024-09-25
err2
errOAAI
errLee, Hyeon Ji; Park, Sungwoo; Kim, Juhui; Park, Min Hyuk; Kim, Jihyun; Lim, Jung Ah; Jang, Ho Won
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
T
Takashi Taniguchi
H 指数: 198 · 论文数: 5.5K
H
Ho Won Jang
H 指数: 102 · 论文数: 856
T
Thomas Mikolajick
H 指数: 99 · 论文数: 793
C
Cheol Seong Hwang
H 指数: 96 · 论文数: 971
J
J. Joshua Yang
H 指数: 91 · 论文数: 474
查看更多