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H

Hiroshi Fujioka

University of Tokyo

33H指数
431论文数
4.5K被引数
收录论文 95
发表时间
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Degenerate GaN source-drain AlN/Al x Ga1-x N/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm简并GaN源漏AlN/AlxGa1-xN/AlN高电子迁移率晶体管，其击穿电场高达6.0 MV/cm
errAPL MATERIALS
IF4.5
err2025-04-25
err0
errOAAI
errUeno, Kohei; Maeda, Ryota; Kozaka, Takao; Fujioka, Hiroshi
err分享
err收藏
First-principles study of charge states effects of nitrogen vacancies on phonon properties in III-nitride semiconductors
errCOMPUTATIONAL MATERIALS SCIENCE
IF3.3
err2024-09-01
err1
errOAAI
errDou, Ying; Shimizu, Koji; Fujioka, Hiroshi; Watanabe, Satoshi
err分享
err收藏
Mid-infrared thermal radiation resonating with longitudinal-optical like phonon from n++-doped GaN-semi-insulating GaN grating structure
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2023-10-19
err5
PREAI
errLin, Bojin; Aye, Hnin Lai Lai; Ueno, Kohei; Fujioka, Hiroshi; Miyake, Hideto; Ishitani, Yoshihiro
err分享
err收藏
Preparation of degenerate n-type AlxGa1-xN (0 < x=0.81) with record low resistivity by pulsed sputtering deposition
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-06-05
err8
PREAI
errNishikawa, Yuto; Ueno, Kohei; Kobayashi, Atsushi; Fujioka, Hiroshi
err分享
err收藏
Positive impurity size effect in degenerate Sn-doped GaN prepared by pulsed sputtering
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-02-21
err7
PREAI
errNishikawa, Yuto; Ueno, Kohei; Kobayashi, Atsushi; Fujioka, Hiroshi
err分享
err收藏
Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2023-01-09
err3
PREAI
errKobayashi, Atsushi; Kihira, Shunya; Akiyama, Toru; Kawamura, Takahiro; Maeda, Takuya; Ueno, Kohei; Fujioka, Hiroshi
err分享
err收藏
Schottky barrier height engineering in vertical p-type GaN Schottky barrier diodes for high-temperature operation up to 800 K
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-12-07
err3
PREAI
errAoyama, Kohei; Ueno, Kohei; Kobayashi, Atsushi; Fujioka, Hiroshi
err分享
err收藏
Crystal-Phase Controlled Epitaxial Growth of NbNx Superconductors on Wide-Bandgap AlN Semiconductors
errADVANCED MATERIALS INTERFACES
IF4.4
err2022-09-21
err9
PREAI
errKobayashi, Atsushi; Kihira, Shunya; Takeda, Takahito; Kobayashi, Masaki; Harada, Takayuki; Ueno, Kohei; Fujioka, Hiroshi
err分享
err收藏
Reduction of Twin Boundary in NbN Films Grown on Annealed AlN
errCRYSTAL GROWTH & DESIGN
IF3.4
err2022-01-11
err0
PREAI
errKihira, Shunya; Kobayashi, Atsushi; Ueno, Kohei; Fujioka, Hiroshi
err分享
err收藏
Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-02-17
err9
PREAI
errFudetani, Taiga; Ueno, Kohei; Kobayashi, Atsushi; Fujioka, Hiroshi
err分享
err收藏
Vertical p-type GaN Schottky barrier diodes with nearly ideal thermionic emission characteristics
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-01-13
err13
PREAI
errUeno, Kohei; Shibahara, Keita; Kobayashi, Atsushi; Fujioka, Hiroshi
err分享
err收藏
Autonomous growth of NbN nanostructures on atomically flat AlN surfaces
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-12-07
err13
PREAI
errKobayashi, Atsushi; Ueno, Kohei; Fujioka, Hiroshi
err分享
err收藏
Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-11-11
err8
PREAI
errMa, Bei; Tang, Mingchuan; Ueno, Kohei; Kobayashi, Atsushi; Morita, Ken; Fujioka, Hiroshi; Ishitani, Yoshihiro
err分享
err收藏
Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition
errSCIENTIFIC REPORTS
IF3.9
err2019-12-27
err19
errOAAI
errUeno, Kohei; Taiga, Fudetani; Kobayashi, Atsushi; Fujioka, Hiroshi
err分享
err收藏
Relationship between charge redistribution and ferromagnetism at the heterointerface between the perovskite oxides LaNiO3 and LaMnO3
errPHYSICAL REVIEW B
IF3.7
err2019-12-19
err14
errOAAI
errKitamura, Miho; Kobayashi, Masaki; Sakai, Enju; Minohara, Makoto; Yukawa, Ryu; Shiga, Daisuke; Amemiya, Kenta; Nonaka, Yosuke; Shibata, Goro; Fujimori, Atsushi; Fujioka, Hiroshi; Horiba, Koji; Kumigashira, Hiroshi
err分享
err收藏
Structural and optical characterization of porous 3C-SiC
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err10
PREAI
errMonguchi, T; Fujioka, H; Ono, K; Oshima, M; Serikawa, T; Hayashi, T; Horiuchi, K; Yamashita, S; Yoshii, K; Baba, Y
err分享
err收藏
AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature
errSCIENTIFIC REPORTS
IF3.9
err2019-04-18
err4
errOAAI
errNakamura, Kyohei; Kobayashi, Atsushi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi
err分享
err收藏
Wide range doping controllability of p-type GaN films prepared via pulsed sputtering
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-01-22
err20
PREAI
errFudetani, Taiga; Ueno, Kohei; Kobayashi, Atsushi; Fujioka, Hiroshi
err分享
err收藏
Growth of Sidoped AIN on sapphire (0001) via pulsed sputtering
errAPL MATERIALS
IF4.5
err2018-11-16
err8
errOAAI
errSakurai, Yuya; Ueno, Kohei; Kobayashi, Atsushi; Ohta, Jitsuo; Miyake, Hideto; Fujioka, Hiroshi
err分享
err收藏
Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering
errAPL MATERIALS
IF4.5
err2017-12-01
err41
errOAAI
errUeno, Kohei; Fudetani, Taiga; Arakawa, Yasuaki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi
err分享
err收藏

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Chenming Hu 封面图
Chenming Hu (Chenming Hu)
H 指数: 93 · 论文数: 881
A
A. Fujimori
H 指数: 89 · 论文数: 1.1K
H
Hideomi Koinuma
H 指数: 86 · 论文数: 1.1K
T
Takashi Kondo
H 指数: 73 · 论文数: 1.2K
M
Masaaki Tanaka
H 指数: 69 · 论文数: 886
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