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M

Mathieu Luisier

ibm usa

44H指数
385论文数
7.6K被引数
收录论文 95
发表时间
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Metal-driven interface engineering enables multi-functionality in SrTiO3 memristor devices金属驱动的界面工程使SrTiO3忆阻器器件实现多功能性
errj. mater. chem. c
IF0
err2026-05-13
err0
errOAAI
errSeyed Mehdi Sattari-Esfahlan; Marko Mladenović; Mathieu Luisier; Venkata R. Nallagatla; Hyoung-Gyun Kim
err分享
err收藏
Atomistic Origin of RTN-like Centers Created and Annihilated by RRAM Write ProcessesRRAM写入过程中产生和湮灭的类RTN中心的原子级起源
errNano Letters
IF9.1
err2026-04-01
err0
errOAAI
errSolomon, Paul; Kaniselvan, Manasa; Miyazoe, Hiroyuki; Khan, Babar; Ando, Takashi; Luisier, Mathieu
err分享
err收藏
Actor–critic networks with analogue memristors mimicking reward-based learning基于模拟忆阻器的演员-评论家网络，模拟基于奖励的学习
errNature Machine Intelligence
IF23.9
err2025-12-09
err0
errOAAI
errKevin Portner; Till Zellweger; Flavio Martinelli; Laura Bégon-Lours; Valeria Bragaglia; Christoph Weilenmann; Daniel Jubin; Donato Francesco Falcone; Felix Hermann; Oscar Hrynkevych; Tommaso Stecconi; Antonio La Porta; Ute Drechsler; Antonis Olziersky; Bert Jan Offrein; Wulfram Gerstner; Mathieu Luisier; Alexandros Emboras
err分享
err收藏
Three-Terminal Memristor with Tunable Volatility and Set Voltage三端可调挥发性和置位电压的忆阻器
errAdvanced Electronic Materials
IF5.3
err2025-11-03
err0
errOAAI
errKshipra Srikrishnaprabhu; Mila Lewerenz; Markus Fischer; Elias Passerini; Arnaud Schneuwly; Nadia Jimenez Olalla; Raphael Gisler; Martin Andreas Stecher; Alexandros Emboras; Mathieu Luisier; Miklós Csontos; Juerg Leuthold
err分享
err收藏
Atomistic Modeling of Valence Change Memory Devices: What Can We Learn from Simulations?价态变化存储器件的原子级建模：从模拟中我们能学到什么？
errAdvanced Electronic Materials
IF5.3
err2025-10-28
err0
errOAAI
errMarko Mladenović; Mathieu Luisier
err分享
err收藏
Mobility calculation in disordered WS2-Al2O3 stacks from first principles无序WS2-Al2O3堆叠的迁移率第一性原理计算
errnpj 2D Materials and Applications
IF8.8
err2025-08-01
err0
errOAAI
errMauro Dossena; Benoit Van Troeye; Fabian Ducry; Jiang Cao; Aryan Afzalian; Geoffrey Pourtois; Mathieu Luisier
err分享
err收藏
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms behind Compositional and Thermal EngineeringHfOx/Ti电阻随机存取存储器中电铸动力学：组分工程和热工程背后的机制
errACS Nano
IF16
err2025-07-18
err0
PREAI
errManasa Kaniselvan; Kevin Portner; Donato Francesco Falcone; Valeria Bragaglia; Jente Clarysse; Laura Bégon-Lours; Marko Mladenović; Bert J. Offrein; Mathieu Luisier
err分享
err收藏
Ab initio simulation of spin-charge qubits based on bilayer graphene-WSe2 quantum dots基于双层graphene-WSe2量子点的自旋电荷量子比特的从头算模拟
errnpj 2D Materials and Applications
IF8.8
err2025-06-11
err0
errOAAI
errHuaiyu Ge; Peter Koopmann; Filip Mrcarica; Otto T. P. Schmidt; Ilan Bouquet; Mauro Dossena; Mathieu Luisier; Jiang Cao
err分享
err收藏
Mechanisms of resistive switching in two-dimensional monolayer and multilayer materials二维单层和多层材料的电阻开关机制
errNATURE MATERIALS
IF38.5
err2025-03-24
err0
PREAI
errKaniselvan, M.; Jeon, Y. -R; Mladenovic, M.; Luisier, M.
err分享
err收藏
Impact of Interface and Surface Oxide Defects on WS2 Electronic Properties from First Principles界面和表面氧化物缺陷对WS2电子性质的影响：第一性原理研究
errACS NANO
IF16
err2025-03-18
err0
PREAI
errVan Troeye, B; Ducry, F; Dossena, M; Luisier, M; Afzalian, A; Pourtois, G
err分享
err收藏
Termination-Dependent Resistive Switching in SrTiO3 Valence Change Memory Cells
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2025-03-01
err0
PREAI
errMladenovic, Marko; Kaniselvan, Manasa; Weilenmann, Christoph; Emboras, Alexandros; Luisier, Mathieu
err分享
err收藏
What's next for FETs?
errNATURE ELECTRONICS
IF40.9
err2024-12-16
err1
PREAI
errLuisier, Mathieu
err分享
err收藏
Single neuromorphic memristor closely emulates multiple synaptic mechanisms for energy efficient neural networks (vol 15, 6898, 2024)
errNATURE COMMUNICATIONS
IF15.7
err2024-12-11
err0
errOAAI
errWeilenmann, Christoph; Ziogas, Alexandros Nikolaos; Zellweger, Till; Portner, Kevin; Mladenovic, Marko; Kaniselvan, Manasa; Moraitis, Timoleon; Luisier, Mathieu; Emboras, Alexandros
err分享
err收藏
Structural Ordering in Ultrasmall Multicomponent Chalcogenides: The Case of Quaternary Cu-Zn-In-Se Nanocrystals
errADVANCED MATERIALS
IF26.8
err2024-09-05
err1
errOAAI
errYarema, Maksym; Yazdani, Nuri; Yarema, Olesya; Dordevic, Nikola; Lin, Weyde M. M.; Bozyigit, Deniz; Volk, Sebastian; Moser, Annina; Turrini, Alexandra; Khomyakov, Petr A.; Nachtegaal, Maarten; Luisier, Mathieu; Wood, Vanessa
err分享
err收藏
Single neuromorphic memristor closely emulates multiple synaptic mechanisms for energy efficient neural networks单个神经形态忆阻器紧密模拟节能神经网络的多个突触机制
errNATURE COMMUNICATIONS
IF15.7
err2024-08-13
err2
errOAAI
errWeilenmann, Christoph; Ziogas, Alexandros Nikolaos; Zellweger, Till; Portner, Kevin; Mladenovic, Marko; Kaniselvan, Manasa; Moraitis, Timoleon; Luisier, Mathieu; Emboras, Alexandros
err分享
err收藏
Prospects of silicide contacts for silicon quantum electronic devices (125, 013501 2024)
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-07-17
err0
PREAI
errTsoukalas, K.; Schupp, F.; Sommer, L.; Bouquet, I.; Mergenthaler, M.; Paredes, S.; Trivino, N. Vico; Luisier, M.; Salis, G.; Harvey-Collard, P.; Zumbuhl, D.; Fuhrer, A.
err分享
err收藏
Prospects of silicide contacts for silicon quantum electronic devices
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-07-02
err3
PREAI
errTsoukalas, K.; Schupp, F.; Sommer, L.; Bouquet, I.; Mergenthaler, M.; Paredes, S.; Trivino, N. Vico; Luisier, M.; Salis, G.; Harvey-Collard, P.; Zumbuhl, D.; Fuhrer, A.
err分享
err收藏
Phonon-limited transport in two-dimensional materials: A unified approach for ab initio mobility and current calculations
errPHYSICAL REVIEW APPLIED
IF4.4
err2024-05-08
err3
PREAI
errBackman, Jonathan; Lee, Youseung; Luisier, Mathieu
err分享
err收藏
Versatile Nanoscale Three-Terminal Memristive Switch Enabled by Gating通过门控实现的多功能纳米级三端忆阻开关
errACS NANO
IF16
err2024-04-09
err3
errOAAI
errLewerenz, Mila; Passerini, Elias; Cheng, Bojun; Fischer, Markus; Emboras, Alexandros; Luisier, Mathieu; Koch, Ueli; Leuthold, Juerg
err分享
err收藏
Magnetoresistive-coupled transistor using the Weyl semimetal NbP使用Weyl半金属NbP的磁阻耦合晶体管
errNATURE COMMUNICATIONS
IF15.7
err2024-01-24
err2
errOAAI
errRocchino, Lorenzo; Balduini, Federico; Schmid, Heinz; Molinari, Alan; Luisier, Mathieu; Suess, Vicky; Felser, Claudia; Gotsmann, Bernd; Zota, Cezar B.
err分享
err收藏

研究方向

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Takashi Taniguchi
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