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Tae‐Sik Yoon

ulsan national institute of science and technology

27H指数
220论文数
2.9K被引数
收录论文 67
发表时间
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Energy-efficient and application-specific neuromorphic computing via oxygen vacancy migration engineering in multi-layered memristors通过多层级忆阻器中的氧空位迁移工程实现高效且面向特定应用的神经形态计算
errNano Energy
IF17.1
err2026-07-21
err0
PREAI
errSola Moon; Seongwook Chae; Kitae Park; Hyejin Lee; Hengquan Guo; Cheolhong Park; Donggyu Kim; Hyunhyub Ko; Hyun-Mi Kim; Hyeongkeun Kim; Seung Geol Lee; Tae-Sik Yoon
err分享
err收藏
Non-volatile memory with improved retention by employing multi-layered HfO2 nanocrystal charge-trap layer deposited by atomic layer deposition采用原子层沉积法制备的多层HfO2纳米晶电荷捕获层以提高非易失性存储器保持性能
errCell Reports Physical Science
IF7.3
err2026-04-30
err0
errOAAI
errTaeyun Noh; Jimin Han; Boyoung Jeong; Youngwook Kim; Minju Lee; Bio Kim; Hanmei Choi; Tae-Sik Yoon
err分享
err收藏
Wafer-Scale Self-Limiting Epitaxy of Bernal-Stacked Single-Crystal Boron Nitride大尺寸自限制外延生长伯纳尔堆叠单晶氮化硼
errSmall
IF12.1
err2026-03-15
err0
errOAAI
errJaewon Wang; Hyeonwoo Lee; Jaemin Kim; Haeng Un Yeo; Cheol Hwan Yoon; Min Seok Yoo; Junseop Noh; Sora Jang; Ju-Hyoung Han; Juwon Han; Jaeeun Park; Young Ho Jin; Huijun Han; Kitae Park; Joonki Suh; Tae-Sik Yoon; Seunguk Song; Minsu Seol; Chanyong Hwang; Hyung-Joon Shin; Zonghoon Lee; Changwook Jeong; Soon-Yong Kwon
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Tunable synaptic weight update ranges in Ru/CeO2/Pt memristor through optimal interaction between Ru and CeO2 for neuromorphic computing applications通过Ru和CeO2之间的最优相互作用，在Ru/CeO2/Pt忆阻器中实现可调的突触权重更新范围，以用于类脑计算应用
errJournal of Alloys and Compounds
IF6.3
err2026-02-21
err0
PREAI
errHanju Ko; Kitae Park; Peter Hayoung Chung; Sola Moon; Hyun-Mi Kim; Hyeongkeun Kim; Tae-Sik Yoon
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Low-power and non-volatile multi-level synaptic weight update characteristics in self-selecting Nb2O5/CeO2 memristor crossbar array for in-memory computing system
errNano Energy
IF17.1
err2026-01-19
err0
PREAI
errKitae Park; Hanju Ko; Peter Hayoung Chung; Jiyeon Ryu; Sola Moon; Tae-Sik Yoon
err分享
err收藏
VOx-Based Non-Volatile Radio-Frequency Switches for Reconfigurable Filter基于VOx的非易失性射频开关在可重构滤波器中的应用
errAdvanced Science
IF14.1
err2025-05-28
err0
errOAAI
errDabin Seo; Dahyeon Kim; Jiyeon Ryu; Changwoo Pyo; Seungchan Lee; Tae-Sik Yoon; Myungsoo Kim
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err收藏
Artificial Synaptic Properties in Oxygen-Based Electrochemical Random-Access Memory with CeO2 Nanoparticle Assembly as Gate Insulator for Neuromorphic Computing基于CeO2纳米颗粒组装作为栅绝缘体的氧基电化学随机存取存储器的仿生突触特性，用于类脑计算
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2025-03-06
err0
PREAI
errJeong, B; Noh, T; Han, J; Ryu, J; Park, JG; Kim, Y; Choi, Y; Lee, S; Park, J; Yoon, TS
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err收藏
Electron and Hole Trapping Characteristics of a Low-Temperature Atomic Layer-Deposited HfO2 Charge-Trap Layer for Charge-Trap Flash Memory用于电荷陷阱闪存的低温原子层沉积的HfO2电荷陷阱层的电子和空穴俘获特性
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2025-02-12
err0
PREAI
errNoh, Taeyun; Han, Jimin; Jeong, Boyoung; Park, Jae-Gwan; Kim, Kihyeun; Lee, Minju; Kim, Bio; Choi, Hanmei; Yoon, Tae-Sik
err分享
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Reservoir computing determined by nonlinear weight dynamics in Gd-doped CeO2/CeO2 bi-layered oxide memristors
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2025-01-01
err0
errOAAI
errMoon, Sola; Park, Cheolhong; Jung, Yunyoung; Min, Kyeong-Sik; Ko, Hyunhyub; Yoon, Tae-Sik
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Forming-Free, Low-Voltage, and High-Speed Resistive Switching in Ag/Oxygen-Deficient Vanadium Oxide(VO x )/Pt Device through Two-Step Resistance Change by Ag Filament Formation
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2024-05-13
err6
PREAI
errRyu, Jiyeon; Park, Kitae; Sahu, Dwipak Prasad; Yoon, Tae-Sik
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Enhanced linear and symmetric synaptic weight update characteristics in a Pt/p-LiCoOx/p-NiO/Pt memristor through interface energy barrier modulation by Li ion redistribution
errNANOSCALE
IF5.1
err2024-01-01
err4
errOAAI
errJeong, Boyoung; Chung, Peter Hayoung; Han, Jimin; Noh, Taeyun; Yoon, Tae-Sik
err分享
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Nanoscale Vertical Resolution in Optical Printing of Inorganic Nanoparticles
errACS NANO
IF16
err2023-12-04
err1
PREAI
errBaek, Seongheon; Jeong, Sanggyun; Ban, Hyeong Woo; Ryu, Jiyeon; Kim, Yoonkyum; Gu, Da Hwi; Son, Changil; Yoon, Tae-Sik; Lee, Jiseok; Son, Jae Sung
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Editorial: Materials and processing of emerging non-volatile memory for advanced applications
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2023-11-01
err0
PREAI
errYoon, Tae-Sik; Kim, SangBum; Kim, Hyungjin
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Tunable voltage polarity-dependent resistive switching characteristics by interface energy barrier modulation in ceria-based bilayer memristors for neuromorphic computing
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2023-11-01
err10
PREAI
errMoon, Sola; Park, Kitae; Chung, Peter Hayoung; Sahu, Dwipak Prasad; Yoon, Tae-Sik
err分享
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Non-volatile charge-trap memory characteristics with low-temperature atomic layer deposited HfO2-x charge-trap layer and interfacial tunneling oxide formed by UV/ozone treatment
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2023-08-01
err2
PREAI
errHan, Jimin; Jeong, Boyoung; Sahu, Dwipak Prasad; Kim, Hyun-Mi; Yoon, Tae-Sik
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Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic computing
errSCIENTIFIC REPORTS
IF3.9
err2023-06-13
err22
errOAAI
errSahu, Dwipak Prasad; Park, Kitae; Chung, Peter Hayoung; Han, Jimin; Yoon, Tae-Sik
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Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoO x Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2023-05-31
err0
PREAI
errJeong, Boyoung; Han, Jimin; Noh, Taeyun; Yoon, Tae-Sik
err分享
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Effect of a Wireless Vital Sign Monitoring System on the Rapid Response System in the General Ward
errJOURNAL OF MEDICAL SYSTEMS
IF5.7
err2022-08-26
err4
errOAAI
errHan, Won Ho; Sohn, Dae Kyung; Hwangbo, Yul; Park, Hee Jung; Kim, Mijung; Choi, Yoona; Shin, Il Won; Lee, Jung Min; Jeon, Heungki; Ryu, Ki Chung; Yoon, Taesik; Kim, Jee Hee
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Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide
errMATERIALS TODAY ADVANCES
IF8
err2022-08-01
err4
errOAAI
errHan, Jimin; Jeong, Boyoung; Kim, Yuri; Suh, Joonki; Jeong, Hongsik; Kim, Hyun-Mi; Yoon, Tae-Sik
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Interface state-dependent synaptic characteristics of Pt/CeO2/Pt memristors controlled by post-deposition annealing
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2022-08-01
err9
PREAI
errPark, Kitae; Chung, Peter Hayoung; Sahu, Dwipak Prasad; Yoon, Tae-Sik
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研究方向

暂无研究方向
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