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Özgür Aktaş

Sandia National Laboratories

34H指数
123论文数
3.8K被引数
收录论文 16
发表时间
Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes
err2016-10-31
err11
PREAI
errKing, M. P.; Kaplar, R. J.; Dickerson, J. R.; Lee, S. R.; Allerman, A. A.; Crawford, M. H.; Fischer, A. J.; Marinella, M. J.; Flicker, J. D.; Fleming, R. M.; Kizilyalli, I. C.; Aktas, O.; Armstrong, A. M.
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Effect of recirculation on nitrogen removal in a hybrid constructed wetland system
err2012-03-01
err89
PREAI
errAyaz, S. C.; Aktas, O.; Findik, N.; Akca, L.; Kinaci, C.
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High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors
err1996-12-16
err183
PREAI
errAktas, O; Fan, ZF; Mohammad, SN; Botchkarev, AE; Morkoc, H
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Near ultraviolet luminescence of Be doped GaN grown by reactive molecular beam epitaxy using ammonia
err1996-10-28
err51
PREAI
errSalvador, A; Kim, W; Aktas, O; Botchkarev, A; Fan, Z; Morkoc, H
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Mg-doped p-type GaN grown by reactive molecular beam epitaxy
err1996-07-22
err104
PREAI
errKim, W; Salvador, A; Botchkarev, AE; Aktas, O; Mohammad, SN; Morcoc, H
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Thermally stimulated current trap in GaN
err1996-06-24
err66
PREAI
errLook, DC; Fang, ZQ; Kim, W; Aktas, O; Botchkarev, A; Salvador, A; Morkoc, H
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Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy
err1996-03-25
err56
PREAI
errSchmidt, TJ; Yang, XH; Shan, W; Song, JJ; Salvador, A; Kim, W; Aktas, O; Botchkarev, A; Morkoc, H
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Structural properties of GaN films grown on sapphire by molecular beam epitaxy
err1996-02-19
err47
PREAI
errZhu, Q; Botchkarev, A; Kim, W; Aktas, O; Salvador, A; Sverdlov, B; Morkoc, H; Tsen, SCY; Smith, DJ
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