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Andrew A. Allerman

Sandia National Laboratories

49H指数
545论文数
8.2K被引数
收录论文 56
发表时间
Operation of AlGaN Channel HEMTs at 850 °C With ON/OFF Ratio >104
err2025-11-25
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PREAI
errJames Spencer Lundh; Brianna A. Klein; Andrew A. Allerman; Andrew J. Cantrell; Alfred Zhao; Daniel J. Pennachio; GlenAsia Gonzalez; Eric Cruz; Tolen M. Nelson; Geoffrey M. Foster; Alan G. Jacobs; Andrew D. Koehler; Marko J. Tadjer; Giovanni Esteves; Roy H. Olsson; Andrew M. Armstrong; Karl D. Hobart; Michael A. Mastro
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Heterostructure and interfacial engineering for low-resistance contacts to ultra-wide bandgap AlGaN
err2025-02-11
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PREAI
errZhu, Yinxuan; Allerman, Andrew A.; Joishi, Chandan; Pratt, Jonathan; Xavier, Agnes Maneesha Dominic Merwin; Ortiz, Gabriel Calderon; Klein, Brianna A.; Armstrong, Andrew; Hwang, Jinwoo; Rajan, Siddharth
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Al-Rich AlGaN Transistors with Regrown p-AlGaN Gate Layers and Ohmic Contacts具有再生长的p-algan栅极层和欧姆接触的富Al AlGaN晶体管
err2024-03-29
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errKlein, Brianna; Allerman, Andrew; Armstrong, Andrew; Rosprim, Mary; Tyznik, Colin; Zhu, Yinxuan; Joishi, Chandan; Chae, Chris; Rajan, Siddharth
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Low voltage drop AlGaN UV-A laser structures with transparent tunnel junctions and optimized quantum wells
err2023-10-26
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errOAAI
errGhosh, Arnob; Xavier, Agnes Maneesha Dominic Merwin; Hasan, Syed M. N.; Rahman, Sheikh Ifatur; Blackston, Alex; Allerman, Andrew; Myers, Roberto C.; Rajan, Siddharth; Arafin, Shamsul
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Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions
err2023-02-23
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PREAI
errXavier, Agnes Maneesha Dominic Merwin; Ghosh, Arnob; Rahman, Sheikh Ifatur; Allerman, Andrew; Arafin, Shamsul; Rajan, Siddharth
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High-resolution planar electron beam induced current in bulk diodes using high-energy electrons
err2021-07-07
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errOAAI
errWarecki, Zoey; Allerman, Andrew A.; Armstrong, Andrew M.; Talin, A. Alec; Cumings, John
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Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor
err2019-10-09
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errOAAI
errLundh, James Spencer; Chatterjee, Bikramjit; Song, Yiwen; Baca, Albert G.; Kaplar, Robert J.; Beechem, Thomas E.; Allerman, Andrew A.; Armstrong, Andrew M.; Klein, Brianna A.; Bansal, Anushka; Talreja, Disha; Pogrebnyakov, Alexej; Heller, Eric; Gopalan, Venkatraman; Redwing, Joan M.; Foley, Brian M.; Choi, Sukwon
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Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate
err2019-05-22
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errOAAI
errArmstrong, Andrew M.; Klein, Brianna A.; Allerman, Andrew A.; Baca, Albert G.; Crawford, Mary H.; Podkaminer, Jacob; Perez, Carlos R.; Siegal, Michael P.; Douglas, Erica A.; Abate, Vincent M.; Leonard, Francois
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Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment
err2019-03-19
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PREAI
errKlein, Brianna A.; Douglas, Erica A.; Armstrong, Andrew M.; Allerman, Andrew A.; Abate, Vincent M.; Fortune, Torben R.; Baca, Albert G.
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AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AIN
err2019-02-05
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PREAI
errArmstrong, Andrew M.; Klein, Brianna A.; Baca, Albert G.; Allerman, Andrew A.; Douglas, Erica A.; Colon, Albert; Abate, Vincent M.; Fortune, Torben R.
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Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces
err2018-03-01
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PREAI
errPaisley, Elizabeth A.; Brumbach, Michael T.; Shelton, Christopher T.; Allerman, Andrew A.; Atcitty, Stanley; Rost, Christina M.; Ohlhausen, James A.; Doyle, Barney L.; Sitar, Zlatko; Maria, Jon-Paul; Ihlefeld, Jon F.
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Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
err2018-02-15
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PREAI
errZhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih; Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth
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Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs
err2017-08-02
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errOAAI
errZhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Johnson, Jared M.; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth
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Tunnel-injected sub-260nm ultraviolet light emitting diodes
err2017-05-15
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errZhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Bajaj, Sanyam; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth
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Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes
err2016-11-09
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errOAAI
errZhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth
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Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes
err2016-10-31
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PREAI
errKing, M. P.; Kaplar, R. J.; Dickerson, J. R.; Lee, S. R.; Allerman, A. A.; Crawford, M. H.; Fischer, A. J.; Marinella, M. J.; Flicker, J. D.; Fleming, R. M.; Kizilyalli, I. C.; Aktas, O.; Armstrong, A. M.
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Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions
err2016-09-19
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errOAAI
errZhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth
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