科言猫
学术研究的AI总结
首页
文献互助
订阅
我的收藏
科研工具
选题分析
论文总结
专利管理
未登录
返回
W
W. J. Choyke
pennsylvania commonwealth system of higher education (pcshe)
64
H指数
366
论文数
1.3W
被引数
0
相关解读
订阅
收录论文
24
发表时间
发表时间
IF
被引数
Band structure properties, phonons, and exciton fine structure in 4H-SiC measured by wavelength-modulated absorption and low-temperature photoluminescence
PHYSICAL REVIEW B
IF
3.7
2020-11-23
6
PRE
AI
Klahold, W. M.; Choyke, W. J.; Devaty, R. P.
分享
收藏
Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC
APPLIED PHYSICS LETTERS
IF
3.6
2012-03-29
4
OA
AI
Yan, F.; Devaty, R. P.; Choyke, W. J.; Gali, A.; Kimoto, T.; Ohshima, T.; Pensl, G.
分享
收藏
Field effect in epitaxial graphene on a silicon carbide substrate
APPLIED PHYSICS LETTERS
IF
3.6
2007-06-19
161
OA
AI
Gu, Gong; Nie, Shu; Feenstra, R. M.; Devaty, R. P.; Choyke, W. J.; Chan, Winston K.; Kane, Michael G.
分享
收藏
Ab initio supercell calculations on aluminum-related defects in SiC
PHYSICAL REVIEW B
IF
3.7
2007-01-31
26
PRE
AI
Gali, A.; Hornos, T.; Son, N. T.; Janzen, E.; Choyke, W. J.
分享
收藏
Hydrogen passivation of carbon Pb like centers at the 3C-and 4H-SiC/SiO2 interfaces in oxidized porous SiC
APPLIED PHYSICS LETTERS
IF
3.6
2006-03-02
40
PRE
AI
Cantin, JL; von Bardeleben, HJ; Ke, Y; Devaty, RP; Choyke, WJ
分享
收藏
SiC pore surfaces: Surface studies of 4H-SiC(1(1)over-bar02) and 4H-SiC(1(1)over-bar02)
APPLIED PHYSICS LETTERS
IF
3.6
2006-01-20
14
PRE
AI
Starke, U; Lee, WY; Coletti, C; Saddow, SE; Devaty, RP; Choyke, WJ
分享
收藏
Defects in SiO2 as the possible origin of near interface traps in the SiC/SiO2 system:: A systematic theoretical study -: art. no. 115323
PHYSICAL REVIEW B
IF
3.7
2005-09-20
163
OA
AI
Knaup, JM; Deák, P; Frauenheim, T; Gali, A; Hajnal, Z; Choyke, WJ
分享
收藏
Theoretical study of the mechanism of dry oxidation of 4H-SiC -: art. no. 235321
PHYSICAL REVIEW B
IF
3.7
2005-06-23
148
OA
AI
Knaup, JM; Deák, P; Frauenheim, T; Gali, A; Hajnal, Z; Choyke, WJ
分享
收藏
Nanoporous SiC: A candidate semi-permeable material for biomedical applications
BIOMEDICAL MICRODEVICES
IF
3.3
2004-12-01
108
PRE
AI
Rosenbloom, AJ; Sipe, DM; Shishkin, Y; Ke, Y; Devaty, RP; Choyke, WJ
分享
收藏
Determination of the electric field in 4H/3C/4H-SiC quantum wells due to spontaneous polarization in the 4H SiC matrix
APPLIED PHYSICS LETTERS
IF
3.6
2003-10-13
73
PRE
AI
Bai, S; Devaty, RP; Choyke, WJ; Kaiser, U; Wagner, G; MacMillan, MF
分享
收藏
Aggregation of carbon interstitials in silicon carbide:: A theoretical study -: art. no. 125201
PHYSICAL REVIEW B
IF
3.7
2003-09-08
101
PRE
AI
Gali, A; Deák, P; Ordejón, P; Son, NT; Janzén, E; Choyke, WJ
分享
收藏
Correlation between the antisite pair and the DI center in SiC -: art. no. 155203
PHYSICAL REVIEW B
IF
3.7
2003-04-02
75
PRE
AI
Gali, A; Deák, P; Rauls, E; Son, NT; Ivanov, IG; Carlsson, FHC; Janzén, E; Choyke, WJ
分享
收藏
ATOMIC HYDROGEN-DRIVEN HALOGEN EXTRACTION FROM SI(100) - ELEY-RIDEAL SURFACE KINETICS
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
IF
15.6
2002-05-01
124
PRE
AI
CHENG, CC; LUCAS, SR; GUTLEBEN, H; CHOYKE, WJ; YATES, JT
分享
收藏
ADSORPTION AND DECOMPOSITION OF ACETYLENE ON SI(100)-(2X1)
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
IF
15.6
2002-05-01
179
PRE
AI
TAYLOR, PA; WALLACE, RM; CHENG, CC; WEINBERG, WH; DRESSER, MJ; CHOYKE, WJ; YATES, JT
分享
收藏
Anharmonicity of the C-H stretch mode in SiC: Unambiguous identification of hydrogen-silicon vacancy defect
APPLIED PHYSICS LETTERS
IF
3.6
2002-01-14
19
PRE
AI
Gali, A; Aradi, B; Heringer, D; Choyke, WJ; Devaty, RP; Bai, S
分享
收藏
Impurity-controlled dopant activation:: Hydrogen-determined site selection of boron in silicon carbide
APPLIED PHYSICS LETTERS
IF
3.6
2001-10-22
31
PRE
AI
Aradi, B; Deák, P; Son, NT; Janzén, E; Choyke, WJ; Devaty, RP
分享
收藏
Nanometer-scale test of the Tung model of Schottky-barrier height inhomogeneity
PHYSICAL REVIEW B
IF
3.7
2001-07-25
120
PRE
AI
Im, HJ; Ding, Y; Pelz, JP; Choyke, WJ
分享
收藏
Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC -: art. no. 245202
PHYSICAL REVIEW B
IF
3.7
2001-05-29
112
PRE
AI
Aradi, B; Gali, A; Deák, P; Lowther, JE; Son, NT; Janzén, E; Choyke, WJ
分享
收藏
Boron-vacancy complex in SiC
PHYSICAL REVIEW B
IF
3.7
1999-10-15
25
PRE
AI
Gali, A; Deák, P; Devaty, RP; Choyke, WJ
分享
收藏
Optically detected electron paramagnetic resonance of AlN single crystals
PHYSICAL REVIEW B
IF
3.7
1999-01-15
39
PRE
AI
Mason, PM; Przybylinska, H; Watkins, GD; Choyke, WJ; Slack, GA
分享
收藏
研究方向
暂无研究方向
合作学者
合作期刊
T
Thomas Frauenheim
H 指数: 100 · 论文数: 939
R
Robert M. Wallace
H 指数: 91 · 论文数: 621
U
Ute Kaiser
H 指数: 88 · 论文数: 777
J
John T. Yates
H 指数: 88 · 论文数: 776
R
R. M. Feenstra
H 指数: 75 · 论文数: 559
查看更多