Hervé Morel - Publications, H-index & Citations

Hervé Morel

institut national des sciences appliquees de lyon - insa lyon

21H指数

251论文数

2.5K被引数

收录论文 20

发表时间

Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching☆由于硬关断开关期间重复过压应力导致的p-GaN HEMTs永久性退化

Microelectronics Reliability

IF1.9

2026-01-01

OAAI

Vadebout, Thomas; Bevilacqua, Pascal; Rustichelli, Valeria; Alam, Maroun; Allirand, Laurence; Morel, Herve

Advanced characterization of SiC devices by optical beam induced current (OBIC): Experimental and simulation results

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-08-01

PREAI

Planson, Dominique; Tournier, Dominique; Sonneville, Camille; Bevilacqua, Pascal; Phung, Luong Viet; Morel, Herve

Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2024-05-01

PREAI

Avino-Salvado, Oriol; Buttay, Cyril; Bonet, Ferran; Raynaud, Christophe; Bevilacqua, Pascal; Rebollo, Jose; Morel, Herve; Perpina, Xavier

Robust Regulation of a Power Flow Controller via Nonlinear Integral Action

IEEE TRANSACTIONS ON CONTROL SYSTEMS TECHNOLOGY

IF3.9

2023-07-01

OAAI

Simon, Tanguy; Giaccagli, Mattia; Tregouet, Jean-Francois; Astolfi, Daniele; Andrieu, Vincent; Morel, Herve; Lin-Shi, Xuefang

Robust nonlinear control of a power flow controller for meshed DC grids

CONTROL ENGINEERING PRACTICE

IF4.6

2023-02-01

OAAI

Simon, Tanguy; Tregouet, Jean-Francois; Lin-Shi, Xuefang; Morel, Herve

Electrical, thermal and mechanical properties of poly-etherimide epoxy-diamine blend

COMPOSITES PART B-ENGINEERING

IF14.2

2017-02-01

OAAI

Halawani, N.; Auge, J. L.; Morel, H.; Gain, O.; Pruvost, S.

A Novel Approach to Accurately Determine the tq Parameter of Thyristors

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2017-01-01

OAAI

Garrab, Hatem; Jedidi, Atef; Morel, Herve; Besbes, Kamel

Design and Implementation of Integrated Common Mode Capacitors for SiC-JFET Inverters

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2014-07-01

OAAI

Robutel, Remi; Martin, Christian; Buttay, Cyril; Morel, Herve; Mattavelli, Paolo; Boroyevich, Dushan; Meuret, Regis

A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2014-05-01

PREAI

Risaletto, Damien; Bergogne, Dominique; Dubois, Fabien; Morel, Herve; Allard, Bruno; Meuret, Regis

Inverse Models of Voltage and Current Probes

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT

IF5.9

2011-12-01

PREAI

Ammous, Kaicar; Morel, Herve; Ammous, Anis

State of the art of high temperature power electronics

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2011-03-01

320

OAAI

Buttay, Cyril; Planson, Dominique; Allard, Bruno; Bergogne, Dominique; Bevilacqua, Pascal; Joubert, Charles; Lazar, Mihai; Martin, Christian; Morel, Herve; Tournier, Dominique; Raynaud, Christophe

Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

SENSORS

IF3.5

2010-01-05

OAAI

Salah, Tarek Ben; Khachroumi, Sofiane; Morel, Herve

Reduced-Order Thermal Behavioral Model Based on Diffusive Representation

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2009-12-01

PREAI

Allard, Bruno; Jorda, Xavier; Bidan, Pierre; Rumeau, Axel; Morel, Herve; Perpina, Xavier; Vellvehi, Miquel; M'Rad, Sabrine

On the role of the N-N+ junction doping profile of a PIN diode on its turn-off transient behavior

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2008-01-01

OAAI

Allard, Bruno; Garrab, Hatem; Ben Salah, Tarek Ben; Morel, Herve; Ammous, Kaicar; Besbes, Katnel

A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2006-10-01

PREAI

Ben Salah, Tarek; Garrab, Hatem; Ghedira, Sami; Allard, Bruno; Risaletto, Damien; Raynaud, Christophe; Besbes, Kamel; Morel, Herve

Model requirements for simulation of low-voltage MOSFET in automotive applications

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2006-05-01

OAAI

Buttay, Cyril; Morel, Herve; Allard, Bruno; Lefranc, Pierre; Brevet, Olivier

On the extraction of PiN diode design parameters for validation of integrated power converter design

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2005-05-01

OAAI

Garrab, H; Allard, B; Morel, H; Ammous, K; Ghedira, S; Amimi, A; Besbes, K; Guichon, JM

Developing an equivalent thermal model for discrete semiconductor packages

INTERNATIONAL JOURNAL OF THERMAL SCIENCES

IF5

2003-05-01

PREAI

Ammous, A; Sellami, F; Ammous, K; Morel, H; Allard, B; Chante, JP

On the validity of the standard SPICE model of the diode for simulation in power electronics

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2001-01-01

OAAI

Massmoudi, N; M'baïri, D; Allard, B; Morel, H

Choosing a thermal model for electrothermal simulation of power semiconductor devices 选择用于功率半导体器件电热仿真的热模型

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

1999-03-01

104

PREAI

Ammous, A; Ghedira, S; Allard, B; Morel, H; Renault, D

研究方向