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I

Igor Stolichnov

EPFL

H指数:32

被引数:4,067

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Electroforming in VO2 Switch: Phase Transformation and Electromigration Phenomena

VO2开关中的电铸：相变与电迁移现象

IF16

2026-03-310

OA

Pulsed Laser and Atomic Layer Deposition of CMOS-Compatible Vanadium Dioxide: Enabling Ultrathin Phase-Change Films

脉冲激光与原子层沉积制备与CMOS兼容的二氧化钒：实现超薄相变薄膜

ACS Applied Electronic Materials

IF4.7

2025-07-020

OA

Position-Sensitive Domain-by-Domain Switchable Ferroelectric Memristor

位置敏感的逐畴可切换铁电忆阻器

IF16

2025-02-130

PRE

Atomic-Scale Characterization of 180° Conductive Domain Walls in PbZr0.1Ti0.9O3

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-11-190

OAAI

Graphene-enhanced ferroelectric domain wall high-output memristor

APPLIED PHYSICS LETTERS

IF3.6

2024-10-073

PRE

Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O3

四方Pb(Zr，Ti)O3中180 ° 畴壁中的巨大可切换非热活化传导

NATURE COMMUNICATIONS

IF15.7

2022-11-2413

OAAI

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

APPLIED PHYSICS LETTERS

IF3.6

2021-05-1217

PREAI

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures

APPLIED PHYSICS LETTERS

IF3.6

2020-10-2612

PREAI

Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2020-05-2918

PREAI

Radio-Frequency Characteristics of Ge-Doped Vanadium Dioxide Thin Films with Increased Transition Temperature

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2020-04-1619

OAAI

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

IF9.1

2020-04-1564

OAAI

Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering (vol 6, 1900042, 2019)

ADVANCED MATERIALS INTERFACES

IF4.4

2019-09-3015

OAAI

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

SCIENTIFIC REPORTS

IF3.9

2019-06-2424

OAAI

Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering

通过溅射沉积的未掺杂HfO2薄膜中铁电相的起源

ADVANCED MATERIALS INTERFACES

IF4.4

2019-04-29163

OAAI

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2018-08-1443

OAAI

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

SCIENTIFIC REPORTS

IF3.9

2017-10-2736

OAAI

Non-volatile polarization switch of magnetic domain wall velocity

APPLIED PHYSICS LETTERS

IF3.6

2015-12-212

PREAI

Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels

IF9.1

2015-11-2468

PREAI

Controlled stripes of ultrafine ferroelectric domains

NATURE COMMUNICATIONS

IF15.7

2014-08-1483

OAAI

Persistent conductive footprints of 109° domain walls in bismuth ferrite films

APPLIED PHYSICS LETTERS

IF3.6

2014-03-3159

PREAI