Osama O. Awadelkarim - Publications, H-index & Citations

Osama O. Awadelkarim

pennsylvania commonwealth system of higher education (pcshe)

19H指数

175论文数

1.2K被引数

收录论文 8

发表时间

The effects of gamma irradiation of SiC- and Si-MOSFETs on their response to electrical stress and thermal annealing γ射线辐照对SiC-和Si-MOSFETs在电应力和热退火响应中的影响

Microelectronics Reliability

IF1.9

2026-01-01

PREAI

Wang, Xinyu; Awadelkarim, Osama

Crystallization of a-Si:H on glass for active layers in thin film transistors -: Effects of glass coating

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Wang, YZ; Fonash, SJ; Awadelkarim, OO; Gu, T

Temperature-dependent dynamic moduli of Parylene-C columnar microfibrous thin films

POLYMER TESTING

IF6

2016-08-01

OAAI

Chindam, Chandraprakash; Brown, Nicole R.; Lakhtakia, Akhlesh; Awadelkarim, Osama O.; Orfali, Wasim

Microfiber inclination, crystallinity, and water wettability of microfibrous thin-film substrates of Parylene C in relation to the direction of the monomer vapor during fabrication

APPLIED SURFACE SCIENCE

IF6.9

2015-08-01

PREAI

Chindam, Chandraprakash; Wonderling, Nichole M.; Lakhtakia, Akhlesh; Awadelkarim, Osama O.; Orfali, Wasim

High-Sensitivity Tracking of MOSFET Damage Using Dynamic-Mode Transient Measurements

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT

IF5.9

2010-06-01

PREAI

Passmore, Lucas J.; Awadelkarim, Osama O.; Cusumano, Joseph P.

Extracting the Richardson constant: IrOx/n-ZnO Schottky diodes (vol 94, 242110, 2009)

APPLIED PHYSICS LETTERS

IF3.6

2009-08-06

OAAI

Sarpatwari, K.; Awadelkarim, O. O.; Allen, M. W.; Durbin, S. M.; Mohney, S. E.

Extracting the Richardson constant: IrOx/n-ZnO Schottky diodes

APPLIED PHYSICS LETTERS

IF3.6

2009-06-19

PREAI

Sarpatwari, K.; Awadelkarim, O. O.; Allen, M. W.; Durbin, S. M.; Mohney, S. E.

Observation of a new type of plasma etching damage: Damage to N-channel transistors arising from inductive metal loops

APPLIED PHYSICS LETTERS

IF3.6

1996-03-18

PREAI

Salah, A; Awadelkarim, OO; Preuninger, F; Chan, YD

研究方向