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K

Kenji Ishikawa

nagoya university

50H指数
789论文数
1.2W被引数
收录论文 154
发表时间
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Step-free profiles by controlling the mask taper angle and ion incident angle in ion milling通过控制掩模锥角和离子入射角实现无台阶形貌
errVacuum
IF3.9
err2026-09-04
err0
errOAAI
errTakashi Usui; Kokichi Fujimoto; Kenji Ishikawa
err分享
err收藏
Sunlight to Plasma: Mimicking nature’s light for smarter agriculture and crop production阳光到等离子体：模仿自然光照以实现更智能的农业和作物生产
errJournal of Advanced Research
IF13
err2026-06-17
err0
errOAAI
errPankaj Attri; Kenji Ishikawa; Kazunori Koga
err分享
err收藏
Transient behaviors of radicals and ions of CxFy and SFx during alternative injections C4F8 and SF6 in Ar plasmaCxFy和SFx在Ar等离子体中交替注入C4F8和SF6期间自由基和离子的瞬态行为
errVacuum
IF3.9
err2026-06-09
err0
errOAAI
errTaito Yoshie; Tran Trung Nguyen; Thi-Thuy-Nga Nguyen; Kenichi Inoue; Takayoshi Tsutsumi; Kenji Ishikawa
err分享
err收藏
Non-thermal plasma-activated methionine-containing Ringer's solution enhances cytotoxicity by increasing oxidative stress非热等离子体激活的含甲硫氨酸林格氏溶液通过增加氧化应激增强细胞毒性
errJournal of Clinical Biochemistry and Nutrition
IF1.7
err2026-05-01
err0
PREAI
errFujisawa, Kosei; Tanahashi, Sakura; Katagiri, Kyoka; Takasu, Soo; Otsuka, Tomohiro; Kamiya, Tetsuro; Ishikawa, Kenji; Esaka, Yukihiro; Hara, Hirokazu
err分享
err收藏
Etch profiles in silicon in SF6 and O2 plasma based on etch-depth-dependent O/F transport gradient model基于蚀刻深度依赖的O/F传输梯度模型的SF6和O2等离子体中硅的蚀刻形貌
errJapanese Journal of Applied Physics
IF1.8
err2026-04-30
err1
PREAI
errTsuchioka, Shuto; Nguyen, Tran Trung; Inoue, Kenichi; Tsutsumi, Takayoshi; Nguyen, Thi-Thuy-Nga; Ishikawa, Kenji
err分享
err收藏
Preliminary study on the visualization and evaluation of non-thermal plasma dose profiles using radiochromic film非热等离子体剂量分布的可视化与评价的初步研究：使用放射显色胶片
errThe European Physical Journal Plus
IF0
err2026-04-06
err0
errOAAI
errHiroshi Yasuda; Takashi Kondo; Kenji Ishikawa
err分享
err收藏
Thermal-cyclic etching of SiGe with selective removal over Ge using fluorocarbon-based plasma and infrared heating使用氟碳基等离子体和红外加热对SiGe进行热循环刻蚀，并选择性去除Ge
errJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
IF2.1
err2026-03-01
err1
PREAI
errShinoda, Kazunori; Nguyen, Thi-Thuy-Nga; Yokogawa, Kenetsu; Izawa, Masaru; Ishikawa, Kenji; Hori, Masaru
err分享
err收藏
Formation of SCF+, SCF2+, and CS2+ ions during gas modulation cycles associated with interference between alternating C4F8 and SF6 in Ar plasma在Ar等离子体中交替C4F8和SF6产生的干扰与气相调制周期相关的SCF+、SCF2+和CS2+离子的形成
errJapanese Journal of Applied Physics
IF1.8
err2026-02-16
err0
PREAI
errYoshie, Taito; Nguyen, Tran Trung; Nguyen, Thi-Thuy-Nga; Inoue, Kenichi; Tsutsumi, Takayoshi; Ishikawa, Kenji
err分享
err收藏
Non-thermal plasma-activated methionine-containing Ringer's solution enhances cytotoxicity by increasing oxidative stress非热等离子体激活的含蛋氨酸林格氏溶液通过增加氧化应激增强细胞毒性
errJournal of Clinical Biochemistry and Nutrition
IF1.7
err2026-02-01
err0
PREAI
errFujisawa, Kosei; Tanahashi, Sakura; Katagiri, Kyoka; Takasu, Soo; Otsuka, Tomohiro; Kamiya, Tetsuro; Ishikawa, Kenji; Esaka, Yukihiro; Hara, Hirokazu
err分享
err收藏
Long-Term Dynamics of Nitric Oxide Radicals in Plasma-Activated Ringer's Lactate Solution血浆活化乳酸林格氏溶液中一氧化氮自由基的长期动力学
errPlasma Processes and Polymers
IF2.9
err2026-01-01
err0
PREAI
errYamakawa, Taishi; Inoue, Kenichi; Ishikawa, Kenji; Hori, Masaru; Tanaka, Hiromasa
err分享
err收藏
Formation of condensed CHF3 layer on SiO2 film at cryogenic temperatures for etching process applications在低温条件下于SiO2薄膜上形成凝聚态CHF3层，用于刻蚀工艺应用
errJapanese Journal of Applied Physics
IF1.8
err2025-12-01
err1
PREAI
errSun, Kuangda; Selvaraj, Suganthamalar; Hazumi, Masahiro; Hsiao, Shih-Nan; Sekine, Makoto; Abe, Chihiro; Sasaki, Toshiyuki; Hayashi, Hisataka; Ishikawa, Kenji; Hori, Masaru
err分享
err收藏
Cycle etching of SiO2 film using Ar plasma irradiation of CHF3-condensed layer at cryogenic temperature below-120 °C在低于-120°C的低温下，使用CHF3冷凝层经Ar等离子体辐照进行SiO2薄膜的循环刻蚀。
errJapanese Journal of Applied Physics
IF1.8
err2025-12-01
err0
PREAI
errSun, Kuangda; Selvaraj, Suganthamalar; Hazumi, Masahiro; Hsiao, Shih-Nan; Sekine, Makoto; Abe, Chihiro; Sasaki, Toshiyuki; Hayashi, Hisataka; Ishikawa, Kenji; Hori, Masaru
err分享
err收藏
The Effect of Electrical Stimulation on the Cellular Response of Human Mesenchymal Stem Cells Grown on Silicon Carbide-Coated Carbon Nanowall Scaffolds电刺激对生长在碳化硅涂层碳纳米墙支架上的人间充质干细胞细胞反应的影响
errBioengineering 2025, Vol. 12, Page 1073
IF3.7
err2025-10-02
err0
errOAAI
errKoki Ono; Ayako Tanaka; Kenji Ishikawa; Wakana Takeuchi; Kenichi Uehara; Shigeo Yasuhara; Masaru Hori; Hiromasa Tanaka
err分享
err收藏
Controlling etch selectivity of TiAlC and TiN films in nonhalogen N-H-O plasmas: Implications for DRAM peripheral transistor fabrication在非卤素N-H-O等离子体中控制TiAlC和TiN薄膜的刻蚀选择性：对DRAM外围晶体管制备的启示
errSurfaces and Interfaces
IF6.3
err2025-09-13
err0
errOAAI
errThi-Thuy-Nga Nguyen; Kazunori Shinoda; Makoto Miura; Kenji Maeda; Kenetsu Yokogawa; Masaru Izawa; Kenji Ishikawa; Masaru Hori
err分享
err收藏
Revolutionizing reactive ion etching: ion-enhanced surface autocatalytic reactions enabling ultra-high throughput using cryogenic hydrogen-fluoride plasma革命化反应离子刻蚀：利用离子增强表面自催化反应，通过低温氢氟酸等离子体实现超高吞吐量
errChemical Engineering Journal
IF13.2
err2025-08-24
err0
PREAI
errShih-Nan Hsiao; Yusuke Imai; Makoto Sekine; Ryutaro Suda; Yuki Iijima; Yoshihide Kihara; Kenji Ishikawa; Masaru Hori
err分享
err收藏
Reaction surface analysis of plasma etching of SiN, SiO2, and poly-Si films using low-global warming potential CF3CHCF2 gas使用低全球变暖潜能值CF3CHCF2气体的SiN、SiO2和多晶硅薄膜等离子体刻蚀反应表面分析
errApplied Surface Science
IF6.9
err2025-07-07
err0
errOAAI
errTrung Nguyen Tran; Kenji Ishikawa
err分享
err收藏
Selective dry etching of TiAlC over TiN using nonhalogen N2/H2 plasma使用无卤素N2/H2等离子体对TiN上的TiAlC进行选择性干法蚀刻
errAPPLIED SURFACE SCIENCE
IF6.9
err2025-05-01
err0
errOAAI
errNguyen, Thi-Thuy-Nga; Shinoda, Kazunori; Hsiao, Shih-Nan; Maeda, Kenji; Yokogawa, Kenetsu; Izawa, Masaru; Ishikawa, Kenji; Hori, Masaru
err分享
err收藏
Low-temperature atomic layer etching of platinum via sequential wet-like reactions of plasma oxidation and complexation
errAPPLIED SURFACE SCIENCE
IF6.9
err2025-04-01
err1
errOAAI
errNguyen, Thi-Thuy-Nga; Akagi, Daijiro; Okato, Takeshi; Ishikawa, Kenji; Hori, Masaru
err分享
err收藏
Valence fragmentation dynamics of a promising low global warming etching gas CF3CHCF2
errSCIENTIFIC REPORTS
IF3.9
err2025-03-19
err0
errOAAI
errNguyen, Tran Trung; Hayashi, Toshio; Iwayama, Hiroshi; Ishikawa, Kenji
err分享
err收藏
Hydrofluoroethane plasma etching of SiN, SiO2, and poly-Si films with CHF2CF3, CF3CH3, and CHF2CH3
errAPPLIED SURFACE SCIENCE
IF6.9
err2025-03-01
err0
errOAAI
errTran, Trung Nguyen; Hayashi, Toshio; Iwayama, Hiroshi; Sekine, Makoto; Hori, Masaru; Ishikawa, Kenji
err分享
err收藏

研究方向

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合作学者
合作期刊
H
Hitoshi Sakakibara
H 指数: 111 · 论文数: 576
F
Francisco J. Barba
H 指数: 108 · 论文数: 991
S
Sadayoshi Ito
H 指数: 100 · 论文数: 1.4K
K
Kôji Uchida
H 指数: 95 · 论文数: 729
Y
Yoshiyuki Kawazoe
H 指数: 94 · 论文数: 2.7K
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