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Designing buried-gate InGaZnO transistors for high-yield and reliable switching characteristics Kim, Do Hyeong; Oh, Seyoung; Kwon, Ojun; Jeong, Soo-Hong; Seo, Hyun Young; Cho, Eunjeong; Kim, Min Jeong; Seo, Wondeok; Kwon, Jung-Dae; Kim, Yonghun; Park, Woojin; Cho, Byungjin 分享 收藏
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Al2O3-Induced Sub-Gap Doping on the IGZO Channel for the Detection of Infrared Light Kim, Jaeun; Kim, Tae Hyeon; Oh, Seyoung; Nam, Jae Hyeon; Jang, Hye Yeon; Kim, Yonghun; Yamada, Naohito; Kobayashi, Hikaru; Kim, So-Young; Lee, Byoung Hun; Habazaki, Hiroki; Park, Woojin; Cho, Byungjin 分享 收藏
Highly Stable and Ultrafast Hydrogen Gas Sensor Based on 15 nm Nanogaps Switching in a Palladium-Gold Nanoribbons Array Pak, Yusin; Jeong, Yeonggyo; Alaal, Naresh; Kim, Hyeonghun; Chae, Jeonghoon; Min, Jung-Wook; Devi, Assa Aravindh Sasikala; Mitra, Somak; Lee, Da Hoon; Kumaresan, Yogeenth; Park, Woojin; Kim, Tae-Wook; Roqan, Iman S.; Jung, Gun-Young 分享 收藏
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Characteristics of light-induced electron transport from P3HT to ZnO-nanowire field-effect transistors Choe, Minhyeok; Lee, Byoung Hoon; Park, Woojin; Kang, Jang-Won; Jeong, Sehee; Cho, Kyungjune; Hong, Woong-Ki; Lee, Byoung Hun; Lee, Kwanghee; Park, Seong-Ju; Lee, Takhee 分享 收藏