M. Hong - Publications, H-index & Citations

M. Hong

National Taiwan University

53H指数

286论文数

1.0W被引数

收录论文 69

发表时间

What predicts mental health profiles in first-generation college freshmen?: the role of proactive personality and university environment 什么预测第一代大学生新生的心理健康状况？：主动人格和大学环境的作用

BMC PSYCHOLOGY

IF3

2025-02-27

OAAI

Chen, Ru; Gao, Xin; Zhang, Zekun; Hong, Mingxue; Zhang, Lulu

Electrically sign-reversible topological Hall effect in a top-gated topological insulator (Bi,Sb)2Te3 grown on europium iron garnet

PHYSICAL REVIEW B

IF3.7

2024-01-26

PREAI

Wong, J. -F.; Chen, K. -H. M.; Chia, J. -M.; Huang, Z. -P.; Wang, S. -X.; Chen, P. -T.; Young, L. B.; Lin, Y. -H. G.; Lee, S. -F; Mou, C. -Y; Hong, M.; Kwo, J.

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y2O3/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-07-13

OAAI

Chen, Wan-Sin; Lin, Keng-Yung; Lin, Yen-Hsun Glen; Wan, Hsien-Wen; Young, Lawrence Boyu; Cheng, Chiu-Ping; Pi, Tun-Wen; Kwo, Jueinai; Hong, Minghwei

High-Ge-Content Si1-xGex Gate Stacks with Low-Temperature Deposited Ultrathin Epitaxial Si: Growth, Structures, Low Interfacial Traps, and Reliability

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-05-28

PREAI

Wan, Hsien-Wen; Cheng, Yi-Ting; Cheng, Chao-Kai; Hong, Yu-Jie; Chu, Tien-Yu; Chang, Mu-Tung; Hsu, Chia-Hung; Kwo, Jueinai; Hong, Minghwei

A Synchrotron Radiation Photoemission Study of SiGe(001)-2x1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations 在Ge和Si衬底上生长的SiGe(001)-2x1的同步辐射光发射研究: 各种Ge浓度的表面电子结构

NANOMATERIALS

IF4.3

2022-04-11

OAAI

Cheng, Yi-Ting; Wan, Hsien-Wen; Kwo, Jueinai; Hong, Minghwei; Pi, Tun-Wen

Oxidation and hydrogenation of SiGe(001)-2 x 1 at room temperature and in situ annealing: A synchrotron radiation photoemission study

APPLIED SURFACE SCIENCE

IF6.9

2021-12-01

PREAI

Cheng, Yi-Ting; Wan, Hsien-Wen; Kwo, Jueinai; Hong, Minghwei; Pi, Tun-Wen

Scavenging Segregated Ge on Thin Single-Crystal Si Epitaxially Grown on Ge

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-09-23

PREAI

Cheng, Yi-Ting; Wan, Hsien-Wen; Chu, Tien-Yu; Pi, Tun-Wen; Kwo, Jueinai; Hong, Minghwei

In situ Y2O3 on p-In0.53Ga0.47As-Attainment of low interfacial trap density and thermal stability at high temperatures

APPLIED PHYSICS LETTERS

IF3.6

2021-06-21

PREAI

Lin, Y. H. G.; Wan, H. W.; Young, L. B.; Liu, J.; Cheng, Y. T.; Lin, K. Y.; Hong, Y. J.; Wu, C. T.; Kwo, J.; Hong, M.

Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics-Attainment of Low Interfacial Traps and Highly Reliable Ge MOS

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-04-21

PREAI

Wan, Hsien-Wen; Hong, Yu-Jie; Cheng, Yi-Ting; Cheng, Chao-Kai; Hsu, Chia-Hung; Wu, Chien-Ting; Pi, Tun-Wen; Kwo, Jueinai; Hong, Minghwei

Epitaxy from a Periodic Y-O Monolayer: Growth of Single-Crystal Hexagonal YAlO3Perovskite

NANOMATERIALS

IF4.3

2020-08-02

OAAI

Hong, Minghwei; Cheng, Chao-Kai; Lin, Yen-Hsun; Young, Lawrence Boyu; Cai, Ren-Fong; Hsu, Chia-Hung; Wu, Chien-Ting; Kwo, Jueinai

Microscopic Views of Atomic and Molecular Oxygen Bonding with epi Ge(001)-2 x 1 Studied by High-Resolution Synchrotron Radiation Photoemission 通过高分辨率同步加速器辐射光电发射研究的原子和分子氧与epi Ge(001)-2x1键合的微观视图

NANOMATERIALS

IF4.3

2019-04-04

OAAI

Cheng, Yi-Ting; Wan, Hsien-Wen; Cheng, Chiu-Ping; Kwo, Jueinai; Hong, Minghwei; Pi, Tun-Wen

Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition

CRYSTAL GROWTH & DESIGN

IF3.4

2019-03-14

PREAI

Young, Lawrence Boyu; Cheng, Chao-Kai; Lin, Keng-Yung; Lin, Yen-Hsun; Wan, Hsien-Wen; Cai, Ren-Fong; Lo, Shen-Chuan; Li, Mei-Yi; Hsu, Chia-Hung; Kwo, Jueinai; Hong, Minghwei

Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y2O3 on GaAs(001)-4 x 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

ACS OMEGA

IF4.3

2018-02-21

OAAI

Cheng, Chiu-Ping; Chen, Wan-Sin; Cheng, Yi-Ting; Wan, Hsien-Wen; Yang, Cheng-Yeh; Pi, Tun-Wen; Kwo, Jueinai; Hong, Minghwei

Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2 x 4 interface: An in-situ synchrotron radiation photoemission study

APPLIED SURFACE SCIENCE

IF6.9

2017-01-01

PREAI

Cheng, Chiu-Ping; Chen, Wan-Sin; Lin, Keng-Yung; Wei, Guo-Jhen; Cheng, Yi-Ting; Lin, Yen-Hsun; Wan, Hsien-Wen; Pi, Tun-Wen; Tung, Raymond T.; Kwo, Jueinai; Hong, Minghwei

Coherent acoustic phonon oscillation accompanied with backward acoustic pulse below exciton resonance in a ZnO epifilm on oxide-buffered Si(111)

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2016-07-19

PREAI

Lin, Ja-Hon; Shen, Yu-Kai; Liu, Wei-Rein; Lu, Chia-Hui; Chen, Yao-Hui; Chang, Chun-peng; Lee, Wei-Chin; Hong, Minghwei; Kwo, Jueinai-Raynien; Hsu, Chia-Hung; Hsieh, Wen-Feng

Demonstration of large field effect in topological insulator films via a high-κ back gate

APPLIED PHYSICS LETTERS

IF3.6

2016-05-17

PREAI

Wang, C. Y.; Lin, H. Y.; Yang, S. R.; Chen, K. H. M.; Lin, Y. H.; Chen, K. H.; Young, L. B.; Cheng, C. K.; Fanchiang, Y. T.; Tseng, S. C.; Hong, M.; Kwo, J.

Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition 使用原子层沉积在GaAs(001) 和 (111) 上外延单晶Y2O3

MATERIALS

IF3.2

2015-10-19

OAAI

Lin, Y. H.; Cheng, C. K.; Chen, K. H.; Fu, C. H.; Chang, T. W.; Hsu, C. H.; Kwo, J.; Hong, M.

Epitaxial ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and interface

APPLIED PHYSICS LETTERS

IF3.6

2015-09-21

PREAI

Liu, Y. C.; Chen, Y. W.; Tseng, S. C.; Chang, M. T.; Lo, S. C.; Lin, Y. H.; Cheng, C. K.; Hung, H. Y.; Hsu, C. H.; Kwo, J.; Hong, M.

Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

APPLIED PHYSICS LETTERS

IF3.6

2014-11-05

PREAI

Chu, R. L.; Chiang, T. H.; Hsueh, W. J.; Chen, K. H.; Lin, K. Y.; Brown, G. J.; Chyi, J. I.; Kwo, J.; Hong, M.

Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structures

APPLIED PHYSICS LETTERS

IF3.6

2014-10-17

PREAI

Hung, H. Y.; Chiang, T. H.; Syu, B. Z.; Fanchiang, Y. T.; Lin, J. G.; Lee, S. F.; Hong, M.; Kwo, J.

研究方向