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C

Chunhua Qi

institute of microelectronics, cas

H指数:14

被引数:823

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SiC Damage Induced by Heavy Ion Irradiation and Post-Gate Stress in SiC MOSFETs

SiC MOSFETs中由重离子辐照和栅极应力引起的SiC损伤

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

IF2.3

2025-12-010

PRE

Effects of neutron radiation on the key component cells of upright metamorphic four-junction (UMM4J) solar cells

OPTICAL MATERIALS

IF4.2

2023-12-012

PRE

Effects of proton radiation on the InGaAs component cells of inverted metamorphic four-junction solar cells

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-08-012

PRE

A novel thermal desalting process using a binary string-of-beads flow array

APPLIED THERMAL ENGINEERING

IF6.9

2023-05-015

PRE

In-situ measurement of triple junction solar cells under low intensity and low temperature (LILT) for deep space mission

OPTICAL MATERIALS

IF4.2

2023-01-017

PRE

The strain and transition metal doping effects on monolayer Cr2O3 for hydrogen evolution reaction: The first principle calculations

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY

IF8.3

2022-10-0114

PRE

CO Line Emission Surfaces and Vertical Structure in Midinclination Protoplanetary Disks

ASTROPHYSICAL JOURNAL

IF5.4

2022-06-2232

OA

Design of High-Reliability Memory Cell to Mitigate Single Event Multiple Node Upsets

减轻单事件多节点干扰的高可靠性存储单元设计

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2021-10-0121

OA

Design of a high-performance 12T SRAM cell for single event upset tolerance

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2021-09-033

PRE

Electronegativity regulation on opt-electronic properties of non van der Waals two-dimensional material: Ga2O3

非范德华二维材料Ga2O3的电负性调控

COMPUTATIONAL MATERIALS SCIENCE

IF3.3

2020-06-016

PREAI

Self-Recovery Tolerance Latch Design Based on the Radiation Mechanism

IF3.6

2020-01-012

OAAI

Single-event upset prediction in static random access memory cell account for parameter variations

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2019-02-263

PREAI

Heavy ion-induced single event upset sensitivity evaluation of 3D integrated static random access memory

NUCLEAR SCIENCE AND TECHNIQUES

IF3.8

2018-02-191

PREAI

Analysis of process variations impact on the single-event transient quenching in 65 nm CMOS combinational circuits

SCIENCE CHINA-TECHNOLOGICAL SCIENCES

IF4.9

2014-01-107

PREAI

Source identification of airborne Escherichia coli of swine house surroundings using ERIC-PCR and REP-PCR

ENVIRONMENTAL RESEARCH

IF7.7

2009-07-0184

OAAI