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J

Jiyong Woo

Arizona State University

33H指数
124论文数
4.1K被引数
收录论文 17
发表时间
Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device
err2023-08-31
err4
errOAAI
errKim, Hyejin; Seo, Jongseon; Cho, Seojin; Jeon, Seonuk; Woo, Jiyong; Lee, Daeseok
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Recent Advancements in Emerging Neuromorphic Device Technologies
err2020-08-23
err21
errOAAI
errWoo, Jiyong; Kim, Jeong Hun; Im, Jong-Pil; Moon, Seung Eon
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Exploiting defective RRAM array as synapses of HTM spatial pooler with boost-factor adjustment scheme for defect-tolerant neuromorphic systems
err2020-07-16
err11
errOAAI
errWoo, Jiyong; Tien Van Nguyen; Kim, Jeong Hun; Im, Jong-Pil; Im, Solyee; Kim, Yeriaron; Min, Kyeong-Sik; Moon, Seung Eon
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CMOS compatible low-power volatile atomic switch for steep-slope FET devices
err2018-07-18
err9
PREAI
errLim, Seokjae; Yoo, Jongmyung; Song, Jeonghwan; Woo, Jiyong; Park, Jaehyuk; Hwang, Hyunsang
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Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application
err2016-04-11
err102
PREAI
errCha, Euijun; Park, Jaehyuk; Woo, Jiyong; Lee, Daeseok; Prakash, Amit; Hwang, Hyunsang
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Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application
err2015-09-16
err43
errOAAI
errSong, Jeonghwan; Prakash, Amit; Lee, Daeseok; Woo, Jiyong; Cha, Euijun; Lee, Sangheon; Hwang, Hyunsang
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Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory
err2014-11-06
err39
errOAAI
errLee, Daeseok; Park, Jaesung; Park, Jaehyuk; Woo, Jiyong; Cha, Euijun; Lee, Sangheon; Moon, Kibong; Song, Jeonghwan; Koo, Yunmo; Hwang, Hyunsang
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Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory
err2014-02-24
err21
errOAAI
errLee, Daeseok; Woo, Jiyong; Park, Sangsu; Cha, Euijun; Lee, Sangheon; Hwang, Hyunsang
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Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory
err2014-02-07
err15
errOAAI
errLee, Sangheon; Woo, Jiyong; Lee, Daeseok; Cha, Euijun; Park, Jaesung; Moon, Kibong; Song, Jeonghwan; Koo, Yunmo; Hwang, Hyunsang
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Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications
err2013-11-14
err17
errOAAI
errWoo, Jiyong; Lee, Daeseok; Cha, Euijun; Lee, Sangheon; Park, Sangsu; Hwang, Hyunsang
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Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications
err2013-03-29
err16
errOAAI
errWoo, Jiyong; Kim, Seonghyun; Lee, Wootae; Lee, Daeseok; Park, Sangsu; Choi, Godeuni; Cha, Euijun; Hwang, Hyunsang
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High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx, Structure for One Selector-One Resistor Arrays
err2012-08-28
err150
PREAI
errLee, Wootae; Park, Jubong; Kim, Seonghyun; Woo, Jiyong; Shin, Jungho; Choi, Godeuni; Park, Sangsu; Lee, Daeseok; Cha, Euijun; Lee, Byoung Hun; Hwang, Hyunsang
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Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments
err2012-04-03
err37
errOAAI
errLee, Wootae; Park, Jubong; Kim, Seonghyun; Woo, Jiyong; Shin, Jungho; Lee, Daeseok; Cha, Euijun; Hwang, Hyunsang
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Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations
err2011-11-11
err20
PREAI
errKim, Seonghyun; Park, Jubong; Jung, Seungjae; Lee, Wootae; Woo, Jiyong; Cho, Chunhum; Siddik, Manzar; Shin, Jungho; Park, Sangsu; Lee, Byoung Hun; Hwang, Hyunsang
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Effect of interfacial oxide layer on the switching uniformity of Ge2Sb2Te5-based resistive change memory devices
err2011-10-21
err15
PREAI
errWoo, Jiyong; Jung, Seungjae; Siddik, Manzar; Cha, Euijun; Sadaf, Sharif Md.; Hwang, Hyunsang
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