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H

Hyunsang Hwang

pohang university of science and technology

62H指数
511论文数
1.7W被引数
收录论文 114
发表时间
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Ionic Field-Effect Transistor Achieving Large Memory Window and Enhanced Retention via Ultrathin Ozone-Oxidized Barrier Layer通过超薄臭氧氧化阻挡层实现大存储窗口和增强存储保持性的离子场效应晶体管
errIEEE Electron Device Letters
IF4.5
err2026-06-12
err0
PREAI
errJongseon Seo; Geonhui Han; Laeyong Jung; Junghoon Park; Jongho Park; Suhwan Lim; Wanki Kim; Daewon Ha; Hyunsang Hwang
err分享
err收藏
Oxygen-Stoichiometry-Controlled Linearity and Uniformity of W/WOx/W Fixed-Resistance Arrays for Edge-AI Inference氧化学计量比调控的W/WOx/W固定电阻阵列在边缘AI推理中的线性和均匀性
errIEEE Electron Device Letters
IF4.5
err2026-05-11
err0
PREAI
errHoesung Ha; Dongmin Kim; Ohhyuk Kwon; Yoori Seo; Hyunsang Hwang
err分享
err收藏
DFT-Informed Multiscale Modeling of Switching Mechanisms and Design Strategies for Selector-Only Memory DevicesDFT指导的多尺度建模：选择器仅存贮器器件的开关机制与设计策略
errIEEE Transactions on Electron Devices
IF3.2
err2026-04-09
err0
errOAAI
errDongmin Kim; Yoori Seo; Ohhyuk Kwon; Yubin Park; Taehoon Lee; Hyunsang Hwang
err分享
err收藏
High-Performance and Scalable Ferroelectric Diodes Enabled via 2D-MoS2 Buffer Layer Under Low Thermal Budget通过2D-MoS2缓冲层在低热预算下实现的高性能和可扩展的铁电二极管
errSmall
IF12.1
err2025-10-07
err0
PREAI
errSeungkwon Hwang; Kyumin Lee; Laeyong Jung; Hojung Jang; Byeongjin Park; Seock-Jin Jeong; Jongwon Yoon; Jung-Dae Kwon; Yonghun Kim; Hyunsang Hwang
err分享
err收藏
Hybrid FeFET-ECRAM Device for Enhanced Memory Window and Retention via Ion-Ferroelectric Synergy通过离子-铁电协同效应实现增强记忆窗口和保持性的混合FeFET-ECRAM器件
errIEEE Electron Device Letters
IF4.5
err2025-08-01
err0
PREAI
errJongseon Seo; Geonhui Han; Laeyong Jung; Ohhyuk Kwon; Hyunsang Hwang
err分享
err收藏
Highly Reliable Hf1-XZrXO2 with Ultra-Low Operation Voltage (< 1 V) Enabled by Stoichiometric Control of Tungsten Oxide Interfacial Layer通过钨氧化物界面层的化学计量控制实现的超低工作电压（< 1 V）高可靠性Hf1-XZrXO2
errAdvanced Materials Technologies
IF6.2
err2025-07-08
err0
errOAAI
errMostafa Habibi; Alireza Kashir; Tony Schenk; Hojung Jang; Seungyeol Oh; Jaeseon Kim; Geonhui Han; Donghwa Lee; Foroozan Koushan; Hyunsang Hwang
err分享
err收藏
Boosting Stochasticity in Ovonic Threshold Switches Through Cryogenic First Firing for Fast and Reliable Entropy Generation通过低温首次点火提高双向阈值开关的随机性，以实现快速可靠的熵生成
errADVANCED ELECTRONIC MATERIALS
IF5.3
err2025-05-01
err0
errOAAI
errKim, D; Lee, J; Seo, Y; Kwon, O; Masouleh, PA; Lee, J; Kwon, J; Kim, CH; Hwang, H
err分享
err收藏
Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access Memory高可靠性QLC 3D V-NAND的战备材料设计：使用旁路电阻式随机存取存储器
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2025-03-24
err0
PREAI
errHan, GH; Seo, J; Park, J; Hong, MJ; Kim, J; Lee, KL; Kim, W; Ha, D; Hwang, H
err分享
err收藏
Physical Reservoir Computing for Real-Time Electrocardiogram Arrhythmia Detection Through Controlled Ion Dynamics in Electrochemical Random-Access Memory基于电化学随机存取存储器中受控离子动力学进行实时心电图心律失常检测的物理储备计算
errADVANCED ELECTRONIC MATERIALS
IF5.3
err2025-03-04
err0
errOAAI
errLee, K; Kim, D; Seo, J; Hwang, H
err分享
err收藏
Exploring the Morphotropic Phase Boundary in HfO2-Based Ferroelectrics for Advanced High-k Dielectrics探索用于高级高k电介质的HfO2-Based铁电体中的相变相界
errADVANCED MATERIALS TECHNOLOGIES
IF6.2
err2024-12-23
err0
PREAI
errOh, Seungyeol; Jang, Hojung; Habibi, Mostafa; Sung, Minchul; Choi, Hyejung; Kim, Seyeon; Hwang, Hyunsang
err分享
err收藏
Controllable multilevel quantized conduction states in vertical CBRAM using Cu-nanodot ion source
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-10-31
err0
errOAAI
errLee, Sunhyeong; Lee, Chuljun; Kwon, Ohhyuk; Heo, Seongjae; Hwang, Hyunsang
err分享
err收藏
Volatile threshold switching devices for hardware security primitives: Exploiting intrinsic variability as an entropy source
errAPPLIED PHYSICS REVIEWS
IF11.6
err2024-05-23
err0
errOAAI
errChoi, Wooseok; Kwon, Ohhyuk; Lee, Jangseop; Oh, Seungyeol; Heo, Seongjae; Ban, Sanghyun; Seo, Yoori; Kim, Dongmin; Hwang, Hyunsang
err分享
err收藏
Improving the selector characteristics of ovonic threshold switch via UV treatment process (vol 123, 242103, 2023)
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-01-04
err0
errOAAI
errSeo, Yoori; Lee, Jangseop; Ban, Sanghyun; Kim, Dongmin; Han, Geonhui; Hwang, Hyunsang
err分享
err收藏
Improving the selector characteristics of ovonic threshold switch via UV treatment process
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-12-13
err3
PREAI
errSeo, Yoori; Lee, Jangseop; Ban, Sanghyun; Kim, Dongmin; Han, Geonhui; Hwang, Hyunsang
err分享
err收藏
Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures使用掩埋栅极结构的基于晶圆级2D-MoS2 fet的集成逻辑电路
errNANOMATERIALS
IF4.3
err2023-10-30
err1
errOAAI
errLee, Ju-Ah; Yoon, Jongwon; Hwang, Seungkwon; Hwang, Hyunsang; Kwon, Jung-Dae; Lee, Seung-Ki; Kim, Yonghun
err分享
err收藏
Improved Switching Uniformity of SCLC-RRAM Using the Vertically Formed Nanoscale 2DEG Electrode and Control of Oxygen Vacancy Distribution
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2023-10-26
err2
PREAI
errKim, Jiho; Kwon, Ohhyuk; Lee, Kyumin; Hwang, Hyunsang
err分享
err收藏
Exploring the Cutting-Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material-to-Device Engineering探索用于神经形态计算的电化学随机存取存储器 (ecram) 的前沿领域: 材料到设备工程的革命性进展
errSMALL
IF12.1
err2023-06-09
err7
errOAAI
errNikam, Revannath Dnyandeo; Lee, Jongwon; Lee, Kyumin; Hwang, Hyunsang
err分享
err收藏
NbO2 selector device with Ge2Sb2Te5 thermal barrier for low off current (300 nA) and low power operation
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-03-13
err2
PREAI
errKwon, Ohhyuk; Lee, Jangseop; Lee, Kyumin; Choi, Wooseok; Hwang, Hyunsang
err分享
err收藏
Study of high-pressure hydrogen annealing effects on InGaZnO thin-film transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-08-17
err7
PREAI
errLee, Kyumin; Jung, Laeyong; Hwang, Hyunsang
err分享
err收藏
On-Chip Integrated Atomically Thin 2D Material Heater as a Training Accelerator for an Electrochemical Random-Access Memory Synapse for Neuromorphic Computing Application
errACS NANO
IF16
err2022-07-19
err6
PREAI
errNikam, Revannath Dnyandeo; Lee, Jongwon; Choi, Wooseok; Kim, Dongmin; Hwang, Hyunsang
err分享
err收藏

研究方向

暂无研究方向
合作学者
合作期刊
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R. Stanley Williams
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Hyoung Seop Kim 封面图
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T
Tae‐Woo Lee
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