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Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted Surface Vishwanath, V.; Demenev, E.; Giubertoni, D.; Vanzetti, L.; Koh, A. L.; Steinhauser, G.; Pepponi, G.; Bersani, M.; Meirer, F.; Foad, M. A. 分享 收藏
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Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon Meirer, Florian; Giubertoni, Damiano; Demenev, Evgeny; Vanzetti, Lia; Gennaro, Salvatore; Fedrizzi, Michele; Pepponi, Giancarlo; Mehta, Apurva; Pianetta, Piero; Steinhauser, Georg; Vishwanath, Vinayak; Foad, Majeed; Bersani, Massimo 分享 收藏
Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS Lobo, Lara; Fernandez, Beatriz; Pereiro, Rosario; Bordel, Nerea; Demenev, Evgeny; Giubertoni, Damiano; Bersani, Massimo; Hoenicke, Philipp; Beckhoff, Burkhard; Sanz-Medel, Alfredo 分享 收藏
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Differential Hall characterisation of ultrashallow doping in advanced Si-based materials Bennett, N. S.; Cowern, N. E. B.; Smith, A. J.; Kah, M.; Gwilliam, R. M.; Sealy, B. J.; Noakes, T. C. Q.; Bailey, P.; Giubertoni, D.; Bersani, M. 分享 收藏
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Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN:H heterostructures Trotta, R.; Polimeni, A.; Capizzi, M.; Giubertoni, D.; Bersani, M.; Bisognin, G.; Berti, M.; Rubini, S.; Martelli, F.; Mariucci, L.; Francardi, M.; Gerardino, A. 分享 收藏