arrow
返回
C

Chao Liu

University of Electronic Science and Technology of China

18H指数
120论文数
896被引数
收录论文 16
发表时间
err分享
err收藏
A Behavioral Model for Pulse Current Analysis of Series-Connected Thyristors串联晶闸管脉冲电流分析的 behavioral 模型
err2025-12-05
err0
PREAI
errPengcheng Xing; Qingbo Wan; Jie Huang; Heng Zhang; Xudong Zhu; Binghui Li; Kai Wang; Xiaochen Shen; Zhihua Zhang; Liang Shi; Ruize Sun; Chao Liu; Wanjun Chen; Bo Zhang
err分享
err收藏
Highly Repetitive Marx Generator With Charge-Control Self-Triggering GaN HEMTs
err2025-10-01
err0
PREAI
errSun, Ruize; Yuan, Wenhan; Pan, Ci; Wang, Xiaoming; Liu, Chao; Chen, Wanjun; Zhang, Bo
err分享
err收藏
Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation
err2024-04-22
err3
PREAI
errChen, Xinghuan; He, Zhiyuan; Shi, Yijun; Wang, Zeheng; Wang, Fangzhou; Sun, Ruize; Chen, Yiqiang; Chen, Yuan; He, Liang; Lu, Guoguang; Chen, Wanjun; Liu, Chao; Zhang, Bo
err分享
err收藏
A Novel Solid-State Circuit Breaker With Robust Breaking Capability and High Efficiency
err2023-10-01
err4
PREAI
errLiu, Chao; Yang, Yuxiao; Chen, Wanjun; Xu, Xiaorui; Zhou, Zekun; Li, Zhaoji; Zhang, Bo
err分享
err收藏
On the Abnormal Reduction and Recovery of Dynamic RON Under UIS Stress in Schottky p-GaN Gate HEMTs
err2023-08-01
err3
PREAI
errLiu, Chao; Chen, Xinghuan; Sun, Ruize; Lai, Jingxue; Chen, Wanjun; Xin, Yajie; Wang, Fangzhou; Wang, Xiaoming; Li, Zhaoji; Zhang, Bo
err分享
err收藏
Analysis of Energy Loss in GaN E-Mode Devices Under UIS Stresses
err2022-06-01
err11
PREAI
errSun, Ruize; Lai, Jingxue; Liu, Chao; Chen, Wanjun; Chen, Yiqiang; Li, Zhaoji; Zhang, Bo
err分享
err收藏
A Novel Thyristor-Based Bidirectional SSCB With Controllable Current Breaking Capability
err2022-04-01
err18
PREAI
errXu, Xiaorui; Chen, Wanjun; Liu, Chao; Sun, Ruize; Wang, Fangzhou; Li, Zhaoji; Zhang, Bo
err分享
err收藏
Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation
err2021-10-01
err18
PREAI
errSun, Ruize; Chen, Xinghuan; Liu, Chao; Chen, Wanjun; Zhang, Bo
err分享
err收藏
An Efficient and Reliable Solid-State Circuit Breaker Based on Mixture Device
err2021-09-01
err32
PREAI
errXu, Xiaorui; Chen, Wanjun; Liu, Chao; Sun, Ruize; Li, Zhaoji; Zhang, Bo
err分享
err收藏
err分享
err收藏
Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors
err2020-06-04
err18
PREAI
errWang, Fangzhou; Chen, Wanjun; Li, Xuan; Sun, Ruize; Xu, Xiaorui; Xin, Yajie; Wang, Zeheng; Shi, Yijun; Xia, Yun; Liu, Chao; Zhou, Jianjun; Zhou, Qi; Zhang, Bo
err分享
err收藏
A novel GaN-based lateral SBD with a TUG-AlGaN/GaN heterojunction
err2019-02-01
err4
PREAI
errShi, Yijun; Chen, Wanjun; Wu, Shan; Liu, Chao; Xia, Yun; Li, Maolin; Cui, Xingtao; Chen, Tangsheng; Zhou, Qi; Deng, Xiaochuan; Zhang, Bo
err分享
err收藏
Investigation on the device geometry-dependent reverse recovery characteristic of AlGaN/GaN lateral field-effect rectifier (L-FER)
err2018-08-01
err4
PREAI
errShi, Yijun; Chen, Wanjun; Liu, Chao; Cui, Xingtao; Li, Maoling; Xia, Yun; Xin, Yajie; Zhou, Qi; Deng, Xiaochuan; Zhang, Bo; Li, Zhaoji
err分享
err收藏
Gate field plate IGBT with trench accumulation layer for extreme injection enhancement
err2017-04-01
err5
PREAI
errXu, Xiaorui; Chen, Wanjun; Liu, Chao; Chen, Nan; Tao, Hong; Shi, Yijun; Ma, Yinchang; Zhou, Qi; Zhang, Bo
err分享
err收藏