未登录Dual-Gate Logic-Controlled Thyristor With Intrinsic AND-Type Turn-On Criterion for False Triggering Suppression双栅逻辑控制的具有固有与型导通判据的晶闸管,用于抑制误触发
Xing, Pengcheng; Cui, Siyuan; Zhang, Heng; Wan, Qingbo; Zhu, Xudong; Huang, Jie; Sun, Ruize; Liu, Chao; Chen, Wanjun; Zhang, Bo
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收藏Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation
Chen, Xinghuan; He, Zhiyuan; Shi, Yijun; Wang, Zeheng; Wang, Fangzhou; Sun, Ruize; Chen, Yiqiang; Chen, Yuan; He, Liang; Lu, Guoguang; Chen, Wanjun; Liu, Chao; Zhang, Bo
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收藏On the Abnormal Reduction and Recovery of Dynamic RON Under UIS Stress in Schottky p-GaN Gate HEMTs
Liu, Chao; Chen, Xinghuan; Sun, Ruize; Lai, Jingxue; Chen, Wanjun; Xin, Yajie; Wang, Fangzhou; Wang, Xiaoming; Li, Zhaoji; Zhang, Bo
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收藏Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors
Wang, Fangzhou; Chen, Wanjun; Li, Xuan; Sun, Ruize; Xu, Xiaorui; Xin, Yajie; Wang, Zeheng; Shi, Yijun; Xia, Yun; Liu, Chao; Zhou, Jianjun; Zhou, Qi; Zhang, Bo
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收藏A novel GaN-based lateral SBD with a TUG-AlGaN/GaN heterojunction
Shi, Yijun; Chen, Wanjun; Wu, Shan; Liu, Chao; Xia, Yun; Li, Maolin; Cui, Xingtao; Chen, Tangsheng; Zhou, Qi; Deng, Xiaochuan; Zhang, Bo
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收藏Investigation on the device geometry-dependent reverse recovery characteristic of AlGaN/GaN lateral field-effect rectifier (L-FER)
Shi, Yijun; Chen, Wanjun; Liu, Chao; Cui, Xingtao; Li, Maoling; Xia, Yun; Xin, Yajie; Zhou, Qi; Deng, Xiaochuan; Zhang, Bo; Li, Zhaoji
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