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F

Fangzhou Wang

shanghai institute of optics & fine mechanics, cas

H指数:15

被引数:564

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荣誉奖项

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Quantum Kernel Learning for Small Dataset Modeling in Semiconductor Fabrication: Application to Ohmic Contact (Adv. Sci. 35/2025)

量子核学习方法在半导体制造中小数据集建模中的应用：欧姆接触（Adv. Sci. 35/2025）

Advanced Science

IF14.1

2025-09-190

OAAI

Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT

基于AlGaN/GaN HEMT的肖特基-MIS共源共栅阳极横向场效应二极管实现超低漏电流

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2024-12-180

OA

Editorial for the Special Issue on the Latest Advancements in Semiconductor Materials, Devices and Systems

IF3

2024-11-270

OAAI

Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination

APPLIED PHYSICS LETTERS

IF3.6

2024-07-124

PRE

Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation

APPLIED PHYSICS LETTERS

IF3.6

2024-04-223

PRE

Exploring the Potential of GaN-Based Power HEMTs with Coherent Channel

IF3

2023-10-311

OAAI

On the Abnormal Reduction and Recovery of Dynamic RON Under UIS Stress in Schottky p-GaN Gate HEMTs

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2023-08-013

PRE

Magnetic domain-dependent ultrafast optical demagnetization in stripe domain films

条纹畴薄膜中依赖磁畴的超快光学退磁

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-04-272

PRE

A Novel Thyristor-Based Bidirectional SSCB With Controllable Current Breaking Capability

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2022-04-0118

PRE

Generation of terahertz transients from Co2Fe0.4Mn0.6Si-Heusler-alloy/normal-metal nanobilayers excited by femtosecond optical pulses

PHYSICAL REVIEW RESEARCH

IF4.2

2021-10-117

OA

Coherent GHz lattice and magnetization excitations in thin epitaxial Ag/Fe/Cr/Fe films

PHYSICAL REVIEW B

IF3.7

2021-08-231

PRE

An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-12-1520

PRE

Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-06-0418

PREAI

A novel technology for turn-on voltage reduction of high-performance lateral heterojunction diode with source-gate shorted anode

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2019-01-0111

PREAI

Proposal of a novel enhancement type AlGaN/GaN HEMT using recess-free field coupled gate

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2018-10-0114

PREAI

Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2018-08-0121

PREAI

Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2018-05-0116

PREAI

Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2017-05-0112

PREAI