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A
Abhinav Kranti
indian institute of technology system (iit system)
35
H指数
230
论文数
4.5K
被引数
0
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16
发表时间
发表时间
IF
被引数
Electrically Configured Analog Signal Modulation and Logic Operation With Dual-Doped RFET
电学配置的模拟信号调制与双掺杂RFET逻辑运算
IEEE Transactions on Nanotechnology
IF
2.5
2026-01-01
0
PRE
AI
Semwal, Sandeep; Su, Pin; Kranti, Abhinav
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Pragmatic Evaluation of Process Corners in ULP Subthreshold Circuits With Quantum Confinement Effects in Junctionless Nanowire Transistor
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
IF
5.2
2024-01-01
2
PRE
AI
Rai, Nivedita; Semwal, Sandeep; Nirala, Rohit Kumar; Kranti, Abhinav
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Gate-All-Around Nanowire Junctionless Transistor-Based Hydrogen Gas Sensor
IEEE SENSORS JOURNAL
IF
4.5
2019-07-01
35
PRE
AI
Mokkapati, Siddharth; Jaiswal, Nivedita; Gupta, Manish; Kranti, Abhinav
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Overcoming Biomolecule Location-Dependent Sensitivity Degradation Through Point and Line Tunneling in Dielectric Modulated Biosensors
通过介电调制生物传感器中的点和线隧穿克服生物分子位置相关的灵敏度退化
IEEE SENSORS JOURNAL
IF
4.5
2018-12-01
41
PRE
AI
Dwivedi, Praveen; Kranti, Abhinav
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Effects of bulk-defects and metal/bulk interface anomalies in a forming-free double-barrier memristor
JOURNAL OF PHYSICS D-APPLIED PHYSICS
IF
3.2
2018-08-31
9
PRE
AI
Kumar, Amitesh; Mukherjee, Shaibal; Kranti, Abhinav
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Dielectric Modulated Biosensor Architecture: Tunneling or Accumulation Based Transistor?
IEEE SENSORS JOURNAL
IF
4.5
2018-04-15
62
PRE
AI
Dwivedi, Praveen; Kranti, Abhinav
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Two-dimensional electron gases in MgZnO/ZnO and ZnO/MgZnO/ZnO heterostructures grown by dual ion beam sputtering
JOURNAL OF PHYSICS D-APPLIED PHYSICS
IF
3.2
2018-03-08
25
PRE
AI
Singh, Rohit; Khan, Md Arif; Sharma, Pankaj; Htay, Myo Than; Kranti, Abhinav; Mukherjee, Shaibal
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Forming-free high-endurance Al/ZnO/Al memristor fabricated by dual ion beam sputtering
APPLIED PHYSICS LETTERS
IF
3.6
2017-06-22
77
PRE
AI
Kumar, Amitesh; Das, Mangal; Garg, Vivek; Sengar, Brajendra S.; Myo Than Htay; Kumar, Shailendra; Kranti, Abhinav; Mukherjee, Shaibal
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Applicability of Transconductance-to-Current Ratio (gm/Ids) as a Sensing Metric for Tunnel FET Biosensors
跨导电流比 (gm/Ids) 作为隧道FET生物传感器传感指标的适用性
IEEE SENSORS JOURNAL
IF
4.5
2017-02-15
59
PRE
AI
Dwivedi, Praveen; Kranti, Abhinav
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Investigation of barrier inhomogeneities and interface state density in Au/MgZnO: Ga Schottky contact
JOURNAL OF PHYSICS D-APPLIED PHYSICS
IF
3.2
2016-10-07
33
PRE
AI
Singh, Rohit; Sharma, Pankaj; Khan, Md Arif; Garg, Vivek; Awasthi, Vishnu; Kranti, Abhinav; Mukherjee, Shaibal
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Back bias induced dynamic and steep subthreshold swing in junctionless transistors
APPLIED PHYSICS LETTERS
IF
3.6
2014-07-21
12
PRE
AI
Parihar, Mukta Singh; Kranti, Abhinav
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Occurrence of zero gate oxide thickness coefficient in junctionless transistors
APPLIED PHYSICS LETTERS
IF
3.6
2013-05-24
4
PRE
AI
Parihar, Mukta Singh; Ghosh, Dipankar; Kranti, Abhinav
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Bipolar snapback in junctionless transistors for capacitorless dynamic random access memory
APPLIED PHYSICS LETTERS
IF
3.6
2012-12-27
24
PRE
AI
Parihar, Mukta Singh; Ghosh, Dipankar; Armstrong, G. Alastair; Kranti, Abhinav
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Bipolar effects in unipolar junctionless transistors
APPLIED PHYSICS LETTERS
IF
3.6
2012-08-27
33
OA
AI
Parihar, Mukta Singh; Ghosh, Dipankar; Armstrong, G. Alastair; Yu, Ran; Razavi, Pedram; Kranti, Abhinav
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Nonclassical Channel Design in MOSFETs for Improving OTA Gain-Bandwidth Trade-Off
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
IF
5.2
2010-12-01
30
PRE
AI
Kranti, Abhinav; Armstrong, G. Alastair
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Mobility improvement in nanowire junctionless transistors by uniaxial strain
APPLIED PHYSICS LETTERS
IF
3.6
2010-07-30
43
OA
AI
Raskin, Jean-Pierre; Colinge, Jean-Pierre; Ferain, Isabelle; Kranti, Abhinav; Lee, Chi-Woo; Akhavan, Nima Dehdashti; Yan, Ran; Razavi, Pedram; Yu, Ran
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研究方向
暂无研究方向
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合作期刊
J
Jean‐Pierre Raskin
H 指数: 50 · 论文数: 1.1K
R
Ran Yan
H 指数: 38 · 论文数: 190
I
Isabelle Ferain
H 指数: 33 · 论文数: 155
C
Chi‐Woo Lee
H 指数: 32 · 论文数: 220
J
Jean-Pierre Colinge
H 指数: 32 · 论文数: 186
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