Isabelle Ferain - Publications, H-index & Citations

Isabelle Ferain

University College Cork

33H指数

155论文数

8.9K被引数

收录论文 13

发表时间

Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2012-11-19

PREAI

Rudenko, Tamara; Nazarov, Alexey; Ferain, Isabelle; Das, Samaresh; Yu, Ran; Barraud, Sylvain; Razavi, Pedram

The zero temperature coefficient in junctionless nanowire transistors

APPLIED PHYSICS LETTERS

IF3.6

2012-08-06

PREAI

Trevisoli, Renan Doria; Doria, Rodrigo Trevisoli; de Souza, Michelly; Das, Samaresh; Ferain, Isabelle; Pavanello, Marcelo Antonio

Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements

APPLIED PHYSICS LETTERS

IF3.6

2011-08-16

OAAI

Nazarov, A. N.; Ferain, I.; Akhavan, N. Dehdashti; Razavi, P.; Yu, R.; Colinge, J. P.

Characterization of a junctionless diode

APPLIED PHYSICS LETTERS

IF3.6

2011-07-05

OAAI

Yu, Ran; Ferain, Isabelle; Akhavan, Nima Dehdashti; Razavi, Pedram; Duffy, Ray; Colinge, Jean-Pierre

Improvement of carrier ballisticity in junctionless nanowire transistors

APPLIED PHYSICS LETTERS

IF3.6

2011-03-10

OAAI

Akhavan, Nima Dehdashti; Ferain, Isabelle; Razavi, Pedram; Yu, Ran; Colinge, Jean-Pierre

Random telegraph-signal noise in junctionless transistors

APPLIED PHYSICS LETTERS

IF3.6

2011-03-01

OAAI

Nazarov, A. N.; Ferain, I.; Akhavan, N. Dehdashti; Razavi, P.; Yu, R.; Colinge, J. P.

Mobility improvement in nanowire junctionless transistors by uniaxial strain

APPLIED PHYSICS LETTERS

IF3.6

2010-07-30

OAAI

Raskin, Jean-Pierre; Colinge, Jean-Pierre; Ferain, Isabelle; Kranti, Abhinav; Lee, Chi-Woo; Akhavan, Nima Dehdashti; Yan, Ran; Razavi, Pedram; Yu, Ran

Low temperature germanium to silicon direct wafer bonding using free radical exposure

APPLIED PHYSICS LETTERS

IF3.6

2010-03-12

OAAI

Byun, Ki Yeol; Ferain, Isabelle; Fleming, Pete; Morris, Michael; Goorsky, Mark; Colinge, Cindy

Low subthreshold slope in junctionless multigate transistors

APPLIED PHYSICS LETTERS

IF3.6

2010-03-10

118

OAAI

Lee, Chi-Woo; Nazarov, Alexei N.; Ferain, Isabelle; Akhavan, Nima Dehdashti; Yan, Ran; Razavi, Pedram; Yu, Ran; Doria, Rodrigo T.; Colinge, Jean-Pierre

Nanowire transistors without junctions

NATURE NANOTECHNOLOGY

IF34.9

2010-02-21

2.1K

PREAI

Colinge, Jean-Pierre; Lee, Chi-Woo; Afzalian, Aryan; Akhavan, Nima Dehdashti; Yan, Ran; Ferain, Isabelle; Razavi, Pedram; O'Neill, Brendan; Blake, Alan; White, Mary; Kelleher, Anne-Marie; McCarthy, Brendan; Murphy, Richard

Reduced electric field in junctionless transistors

APPLIED PHYSICS LETTERS

IF3.6

2010-02-15

265

OAAI

Colinge, Jean-Pierre; Lee, Chi-Woo; Ferain, Isabelle; Akhavan, Nima Dehdashti; Yan, Ran; Razavi, Pedram; Yu, Ran; Nazarov, Alexei N.; Doriac, Rodrigo T.

Junctionless multigate field-effect transistor

APPLIED PHYSICS LETTERS

IF3.6

2009-02-06

983

OAAI

Lee, Chi-Woo; Afzalian, Aryan; Akhavan, Nima Dehdashti; Yan, Ran; Ferain, Isabelle; Colinge, Jean-Pierre

Subthreshold channels at the edges of nanoscale triple-gate silicon transistors

APPLIED PHYSICS LETTERS

IF3.6

2007-02-12

OAAI

Sellier, H.; Lansbergen, G. P.; Caro, J.; Rogge, S.; Collaert, N.; Ferain, I.; Jurczak, M.; Biesemans, S.

研究方向