M. F. Romero - Publications, H-index & Citations

M. F. Romero

Otto von Guericke University

12H指数

33论文数

521被引数

收录论文 10

发表时间

The impact of geopolitical risk on the behavior of oil prices and freight rates

ENERGY

IF9.4

2023-04-01

OAAI

Monge, Manuel; Rojo, Maria Fatima Romero; Gil-Alana, Luis Alberiko

Origin of defect luminescence in ultraviolet emitting AlGaN diode structures

APPLIED PHYSICS LETTERS

IF3.6

2021-05-17

OAAI

Feneberg, Martin; Romero, Fatima; Goldhahn, Rudiger; Wernicke, Tim; Reich, Christoph; Stellmach, Joachim; Mehnke, Frank; Knauer, Arne; Weyers, Markus; Kneissl, Michael

Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2017-03-01

PREAI

Cucak, Dejana; Vasic, Miroslav; Garcia, Oscar; Angel Oliver, Jesus; Alou, Pedro; Antonio Cobos, Jose; Wang, Ashu; Martin-Horcajo, Sara; Fatima Romero, Maria; Calle, Fernando

Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2016-11-30

PREAI

Minj, A.; Romero, M. F.; Wang, Y.; Tuna, Oe.; Feneberg, M.; Goldhahn, R.; Schmerber, G.; Ruterana, P.; Giesen, C.; Heuken, M.

Influence of lateral and in- depth metal segregation on the patterning of ohmic contacts for GaN-based devices

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2014-04-16

PREAI

Redondo-Cubero, A.; Vazquez, L.; Alves, L. C.; Corregidor, V.; Romero, M. F.; Pantellini, A.; Lanzieri, C.; Munoz, E.

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2013-07-17

OAAI

Sasikumar, A.; Arehart, A. R.; Martin-Horcajo, S.; Romero, M. F.; Pei, Y.; Brown, D.; Recht, F.; di Forte-Poisson, M. A.; Calle, F.; Tadjer, M. J.; Keller, S.; DenBaars, S. P.; Mishra, U. K.; Ringel, S. A.

Anisotropic absorption and emission of bulk (1(1)over-bar00) AlN

PHYSICAL REVIEW B

IF3.7

2013-06-24

OAAI

Feneberg, Martin; Romero, Maria Fatima; Roeppischer, Marcus; Cobet, Christoph; Esser, Norbert; Neuschl, Benjamin; Thonke, Klaus; Bickermann, Matthias; Goldhahn, Ruediger

Negative spin-exchange splitting in the exciton fine structure of AlN

APPLIED PHYSICS LETTERS

IF3.6

2013-02-05

OAAI

Feneberg, Martin; Romero, Maria Fatima; Neuschl, Benjamin; Thonke, Klaus; Roeppischer, Marcus; Cobet, Christoph; Esser, Norbert; Bickermann, Matthias; Goldhahn, Ruediger

Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content

APPLIED PHYSICS LETTERS

IF3.6

2012-05-21

OAAI

Romero, M. F.; Feneberg, M.; Moser, P.; Berger, C.; Blaesing, J.; Dadgar, A.; Krost, A.; Sakalauskas, E.; Goldhahn, R.

Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2010-11-23

OAAI

Romero, M. F.; Sanz, M. M.; Tanarro, I.; Jimenez, A.; Munoz, E.

研究方向