A. Krost - Publications, H-index & Citations

A. Krost

energie-forschungszentrum niedersachsen (efzn)

55H指数

482论文数

1.1W被引数

收录论文 93

发表时间

High-frequency detection of cell activity of Physarum polycephalum by a planar open gate AlGaN/GaN HEMT

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2014-09-18

PREAI

Witte, Hartmut; Lippelt, Thomas; Warnke, Christian; Dadgar, Armin; Hauser, Marcus J. B.; Krost, Alois

Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm-3

PHYSICAL REVIEW B

IF3.7

2014-08-18

149

PREAI

Feneberg, Martin; Osterburg, Sarah; Lange, Karsten; Lidig, Christian; Garke, Bernd; Goldhahn, Ruediger; Richter, Eberhard; Netzel, Carsten; Neumann, Maciej D.; Esser, Norbert; Fritze, Stephanie; Witte, Hartmut; Blaesing, Juergen; Dadgar, Armin; Krost, Alois

Characterization of AlInN/AlN/GaN FET structures using x-ray diffraction, x-ray reflectometry and grazing incidence x-ray fluorescence analysis

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2014-08-15

PREAI

Lesnik, Andreas; Blaesing, Juergen; Hennig, Jonas; Dadgar, Armin; Krost, Alois

High-pressure Raman scattering in InGaN heteroepitaxial layers: Effect of the substrate on the phonon pressure coefficients

APPLIED PHYSICS LETTERS

IF3.6

2014-04-07

PREAI

Oliva, R.; Ibanez, J.; Cusco, R.; Dadgar, A.; Krost, A.; Gandhi, J.; Bensaoula, A.; Artus, L.

Anisotropy of effective electron masses in highly doped nonpolar GaN

APPLIED PHYSICS LETTERS

IF3.6

2013-12-04

PREAI

Feneberg, Martin; Lange, Karsten; Lidig, Christian; Wieneke, Matthias; Witte, Hartmut; Blaesing, Juergen; Dadgar, Armin; Krost, Alois; Goldhahn, Ruediger

Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 1020 cm-3

APPLIED PHYSICS LETTERS

IF3.6

2013-07-03

OAAI

Wieneke, Matthias; Witte, Hartmut; Lange, Karsten; Feneberg, Martin; Dadgar, Armin; Blaesing, Juergen; Goldhahn, Ruediger; Krost, Alois

Growth and characterization of stacking fault reduced GaN( 1 0 1($)over-bar 3) on sapphire

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2013-02-25

PREAI

Blaesing, Juergen; Holy, Vaclav; Dadgar, Armin; Veit, Peter; Christen, Juergen; Ploch, Simon; Frentrup, Martin; Wernicke, Tim; Kneissl, Michael; Krost, Alois

Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers

APPLIED PHYSICS LETTERS

IF3.6

2013-02-15

PREAI

Dadgar, A.; Groh, L.; Metzner, S.; Neugebauer, S.; Blaesing, J.; Hempel, T.; Bertram, F.; Christen, J.; Krost, A.; Andreev, Z.; Witzigmann, B.

Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content

APPLIED PHYSICS LETTERS

IF3.6

2012-05-21

OAAI

Romero, M. F.; Feneberg, M.; Moser, P.; Berger, C.; Blaesing, J.; Dadgar, A.; Krost, A.; Sakalauskas, E.; Goldhahn, R.

Optical properties of cubic GaN from 1 to 20 eV

PHYSICAL REVIEW B

IF3.7

2012-04-26

PREAI

Feneberg, Martin; Roeppischer, Marcus; Cobet, Christoph; Esser, Norbert; Schoermann, Joerg; Schupp, Thorsten; As, Donat J.; Hoerich, Florian; Blaesing, Juergen; Krost, Alois; Goldhahn, Ruediger

High Si and Ge n-type doping of GaN doping - Limits and impact on stress

APPLIED PHYSICS LETTERS

IF3.6

2012-03-19

182

PREAI

Fritze, S.; Dadgar, A.; Witte, H.; Buegler, M.; Rohrbeck, A.; Blaesing, J.; Hoffmann, A.; Krost, A.

Extracting accurate capacitance voltage curves from impedance spectroscopy 从阻抗谱中提取精确的电容电压曲线

APPLIED PHYSICS LETTERS

IF3.6

2012-01-24

PREAI

Guenther, Kay-Michael; Witte, Hartmut; Krost, Alois; Kontermann, Stefan; Schade, Wolfgang

AlxGa1-xN/GaN heterostructures on a thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2011-08-23

PREAI

Lin, Vivian Kaixin; Dolmanan, Surani-Bin; Teo, Siew Lang; Kim, Hui Hui; Alarcon-Llado, Esther; Dadgar, Armin; Krost, Alois; Tripathy, Sudhiranjan

AlGaN/GaN-based HEMTs for electrical stimulation of neuronal cell cultures

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2011-08-16

OAAI

Witte, H.; Warnke, C.; Voigt, T.; de Lima, A.; Ivanov, I.; Vidakovic-Koch, T. R.; Sundmacher, K.; Krost, A.

Eliminating stacking faults in semi-polar GaN by AlN interlayers

APPLIED PHYSICS LETTERS

IF3.6

2011-07-13

PREAI

Dadgar, A.; Ravash, R.; Veit, P.; Schmidt, G.; Mueller, M.; Dempewolf, A.; Bertram, F.; Wieneke, M.; Christen, J.; Krost, A.

Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge

PHYSICAL REVIEW B

IF3.7

2011-05-04

PREAI

Rossbach, Georg; Feneberg, Martin; Roeppischer, Marcus; Werner, Christoph; Esser, Norbert; Cobet, Christoph; Meisch, Tobias; Thonke, Klaus; Dadgar, Armin; Blaesing, Juergen; Krost, Alois; Goldhahn, Ruediger

Optical investigation of a hybrid GaN based microcavity with AlInN/GaN bottom and dielectric top distributed Bragg mirror

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2011-03-01

PREAI

Franke, A.; Bastek, B.; Krimmling, J.; Christen, J.; Moser, P.; Dadgar, A.; Krost, A.

Unintentional doping of a-plane GaN by insertion of in situ SiN masks

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2011-02-08

OAAI

Witte, H.; Wieneke, M.; Rohrbeck, A.; Guenther, K-M; Dadgar, A.; Krost, A.