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收藏Photomixers fabricated on nitrogen-ion-implanted GaAs -: art. no. 041106
Mikulics, M; Marso, M; Mayorga, IC; Güsten, R; Stancek, S; Kovác, P; Wu, S; Li, X; Khafizov, M; Sobolewski, R; Michael, EA; Schieder, R; Wolter, M; Buca, D; Förster, A; Kordos, P; Lüth, H
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收藏Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm
Shatalov, M; Chitnis, A; Mandavilli, V; Pachipulusu, R; Zhang, JP; Adivarahan, V; Wu, S; Simin, G; Khan, MA; Tamulaitis, G; Sereika, A; Yilmaz, I; Shur, MS; Gaska, R
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收藏Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
Zhang, JP; Chitnis, A; Adivarahan, V; Wu, S; Mandavilli, V; Pachipulusu, R; Shatalov, M; Simin, G; Yang, JW; Khan, MA
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收藏AlGaN single-quantum-well light-emitting diodes with emission at 285 nm
Adivarahan, V; Wu, S; Chitnis, A; Pachipulusu, R; Mandavilli, V; Shatalov, M; Zhang, JP; Khan, MA; Tamulaitis, G; Sereika, A; Yilmaz, I; Shur, MS; Gaska, R
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收藏Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm
Chitnis, A; Sun, J; Mandavilli, V; Pachipulusu, R; Wu, S; Gaevski, M; Adivarahan, V; Zhang, JP; Khan, MA; Sarua, A; Kuball, M
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