logo
科言猫学术研究的AI总结
language
手机端手机端
  • Phone Feature微信小程序
简体中文简体中文
notice消息通知
博客博客
delete
arrow
返回
M

Martin Kuball

university of bristol

60H指数
537论文数
1.4W被引数
收录论文 123
发表时间
logo
Enhanced Thermal Management in GaN Superlattice Castellated Field Effect TransistorsGaN超晶格城堡式场效应晶体管的热管理增强
errIEEE Electron Device Letters
IF4.5
err2026-05-25
err0
PREAI
errPharyanshu Kachhawa; Seungwon Park; Jagori Raychaudhuri; Jonathen Malen; Tariq Jamil; Tazbiul Hasan; Asif Khan; Jeong-Kyu Kim; Mohamadali Malakoutian; Srabanti Chowdhury; James W. Pomeroy; Brian Novak; R. S. Howell; Shamima Afroz; Martin Kuball
err分享
err收藏
MOCVD Growth of κ-Ga2O3 on Al-Rich AlxGa1–xN Templates: Phase Diagram and Microstructural EvolutionMOCVD生长的κ-Ga2O3在Al富集AlxGa1–xN衬底上的相图与微观结构演变
errCrystal Growth & Design
IF0
err2026-04-29
err0
errOAAI
errKhai D. Ngo; Usman Ul Muazzam; Arpit Nandi; Sai K. Anandan; Yidi Yin; David Cherns; Menno J. Kappers; Rachel A. Oliver; Matthew D. Smith; Martin Kuball
err分享
err收藏
Mitigating Plasma Etch-Induced Negative Charge Trapping in 2.7 kV β-Ga2O3 (001) Trench Schottky Barrier Diodes Using H3PO4 Treatment通过H3PO4处理缓解2.7 kV β-Ga2O3 (001) 沟槽肖特基势垒二极管中等离子体刻蚀诱导的负电荷捕获
errACS Applied Electronic Materials
IF4.7
err2026-03-05
err0
errOAAI
errMin-Yeong Kim; Aditya Kundapura Bhat; Sai Charan Vanjari; Matthew D. Smith; Martin Kuball
err分享
err收藏
Microanalysis of β-(AlxGa1−x)2O3 Films Grown by MOCVDMOCVD生长的β-(AlxGa1−x)2O3薄膜的微分析
errMaterials
IF3.2
err2026-02-27
err0
errOAAI
errMugove Maruzane; Arpit Nandi; Sean Douglas; Lewis Penman; Sai Charan Vanjari; Indraneel Sanyal; Matthew Smith; Robert W. Martin; Martin Kuball; Fabien C. P. Massabuau
err分享
err收藏
Thermal Characterization of 650 V GaN HEMTs on 200 mm Engineered Substrates650 V GaN HEMTs在200 mm工程衬底上的热特性表征
errIEEE Electron Device Letters
IF4.5
err2026-02-23
err0
errOAAI
errZequan Chen; James W. Pomeroy; Zeina Abdallah; Leo Norman; Peng Huang; Matthew D. Smith; Anurag Vohra; Sujit Kumar; Stefaan Decoutere; Benoit Bakeroot; Martin Kuball
err分享
err收藏
(Pseudo-)symmetry-driven coherent interfaces and texture in epitaxial b-Ga2O3 thin films on (001) diamond(伪-)对称性驱动的相干界面与织构在(001)金刚石上的外延β-Ga₂O₃薄膜中
errJOURNAL OF APPLIED CRYSTALLOGRAPHY
IF2.8
err2025-12-01
err0
PREAI
errMandia, Ramandeep; Nandi, Arpit; Cherns, David; Kuball, Martin; Smith, David J.
err分享
err收藏
N-polar AlN-based enhancement-mode transistor with p-NiOx gate stacks and reduced buffer trappingN极性AlN基增强型晶体管，采用p-NiOx栅极堆栈并减少缓冲层陷阱
errJournal of Physics D: Applied Physics
IF3.2
err2025-11-26
err0
errOAAI
errChengzhi Zhang; Yidi Yin; Peng Huang; Itsuki Furuhashi; Yoann Robin; Markus Pristovsek; Martin Kuball; Matthew D Smith
err分享
err收藏
Impact of AlGaN Back Barrier on the Thermal Resistance of RF HEMTsAlGaN背势垒对RF HEMT热阻的影响
errIEEE Electron Device Letters
IF4.5
err2025-07-01
err0
PREAI
errL. R. Norman; Z. Abdallah; J. W. Pomeroy; G. Drandova; J. Jimenez; A. Xie; A. Lucero; M. Kuball
err分享
err收藏
Charge Transport in GaN High Electron Mobility Transistor With Positive Substrate BiasGaN高电子迁移率晶体管在正衬底偏置下的电荷输运
errIEEE Transactions on Electron Devices
IF3.2
err2025-07-01
err0
PREAI
errPeng Huang; Matthew D. Smith; Michael J. Uren; Zequan Chen; Benoit Bakeroot; Anurag Vohra; Stefaan Decoutere; Martin Kuball
err分享
err收藏
Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications氮化镓多通道器件，其具有锁存诱导的每十倍频程低于60 mV的亚阈值摆率，适用于射频应用
errNature Electronics
IF40.9
err2025-05-22
err0
errOAAI
errAkhil S. Kumar; Stefano Dalcanale; Michael J. Uren; James W. Pomeroy; Matthew D. Smith; Justin A. Parke; Robert S. Howell; Martin Kuball
err分享
err收藏
Electrically active defects in Ta-doped β-Ga2O3 grown using the optical floating zone method采用光学浮区法生长的Ta掺杂β-Ga2O3中的电活性缺陷
errAPL MATERIALS
IF4.5
err2025-04-22
err0
errOAAI
errDawe, Christopher A.; Sun, Lijie; Vijayan, V. L. Ananthu; Markevich, Vladimir P.; Jacobs, Janet; Hawkins, Ian D.; Halsall, Matthew P.; Peaker, Anthony R.; Binks, David J.; Vanjari, Sai Charan; Sridharan, Moorthy Babu; Kuball, Martin
err分享
err收藏
Breakdown-induced directional cracking in kilovolt-class β -Ga2O3 (001) vertical trench Schottky barrier diodes
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-04-21
err0
PREAI
errVanjari, Sai Charan; Bhat, Aditya K.; Huang, Haiqi; Smith, Matthew D.; Pomeroy, James W.; Kuball, Martin
err分享
err收藏
Thermal Boundary Resistance Reduction by Interfacial Nanopatterning for GaN-on-Diamond Electronics Applications
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2025-03-01
err0
errOAAI
errJi, Xiaoyang; Vanjari, Sai Charan; Francis, Daniel; Cuenca, Jerome A.; Nandi, Arpit; Cherns, David; Williams, Oliver A.; Ejeckam, Felix; Pomeroy, James W.; Kuball, Martin
err分享
err收藏
Buffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon无缓冲层硅基氮化镓高电子迁移率异质结构
errADVANCED MATERIALS
IF26.8
err2025-01-23
err1
errOAAI
errGhosh, S; Frentrup, M; Hinz, AM; Pomeroy, JW; Field, D; Wallis, DJ; Kuball, M; Oliver, RA
err分享
err收藏
Analysis of Avalanche UIS Ruggedness of Vertical Power Silicon and SiC NPN BJTs垂直功率硅和SiC NPN BJT的雪崩UIS稳健性分析
errIEEE Open Journal of Power Electronics
IF3.9
err2025-01-01
err0
errOAAI
errMana Hosseinzadehlish; Saeed Jahdi; Xibo Yuan; Martin Kuball
err分享
err收藏
Low On-Resistance and High Carrier Mobility in β-Ga2O3 Single-Crystal Substrates through Tantalum Doping
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-12-26
err0
errOAAI
errVijayan, V. L. Ananthu; Vanjari, Sai Charan; Bhat, Aditya K.; Ul Muazzam, Usman; Pomeroy, James W.; Smith, Matthew D.; Babu, Sridharan Moorthy; Kuball, Martin
err分享
err收藏
Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications面向下一代毫米波应用的新兴GaN技术
errIEEE MICROWAVE MAGAZINE
IF2.6
err2024-10-01
err2
PREAI
errMedjdoub, Farid; Shinohara, Keisuke; Thome, Fabian; Moon, Jeong-sun; Chumbes, Eduardo; Guidry, Matthew T.; Mishra, Umesh; Zanoni, Enrico; Meneghini, Matteo; Meneghesso, Gaudenzio; Pomeroy, James W.; Thingujam, Terirama; Kuball, Martin
err分享
err收藏
Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-08-28
err0
errOAAI
errChen, Zequan; Uren, Michael J.; Huang, Peng; Sanyal, Indraneel; Smith, Matthew D.; Vohra, Anurag; Kumar, Sujit; Decoutere, Stefaan; Bakeroot, Benoit; Kuball, Martin
err分享
err收藏
Characterizing electric fields in semiconductor devices: effect of second-harmonic light interference
errOPTICS LETTERS
IF3.3
err2024-07-15
err0
PREAI
errCao, Yuke; Pomeroy, James w.; Kuball, Martin
err分享
err收藏
Simultaneous Measurement of Thermal Conductivity and Volumetric Heat Capacity of Thermal Interface Materials Using Thermoreflectance使用热反射同时测量热界面材料的热导率和体积热容量
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-06-27
err4
errOAAI
errAbdallah, Zeina; Pomeroy, James W.; Blasakis, Nicolas; Baltopoulos, Athanasios; Kuball, Martin
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
R
Robert O. Ritchie
H 指数: 147 · 论文数: 1.0K
M
M. Cardona
H 指数: 125 · 论文数: 1.3K
J
James S. Speck
H 指数: 120 · 论文数: 1.5K
高
高峰 (Feng Gao)
H 指数: 120 · 论文数: 948
U
Umesh K. Mishra
H 指数: 108 · 论文数: 1.2K
查看更多