M. Miura–Mattausch - Publications, H-index & Citations

M. Miura–Mattausch

Hiroshima University

22H指数

337论文数

2.4K被引数

收录论文 12

发表时间

Simulation-Based Power-Loss Optimization of General-Purpose High-Voltage SiC MOSFET Circuit Under High-Frequency Operation

IEEE ACCESS

IF3.6

2021-01-01

OAAI

Kar, Abhishek; Miura-Mattausch, Mitiko; Sengupta, Mainak; Navaroo, Dondee; Kikuchihara, Hideyuki; Iizuka, Takahiro; Rahaman, Hafizur; Mattausch, Hans Jurgen

Energy Efficiency of Force-Sensor-Controlled Humanoid-Robot Walking on Indoor Surfaces

IEEE ACCESS

IF3.6

2020-01-01

OAAI

Bhattacharya, Sandip; Dutta, Sunandan; Luo, Aiwen; Miura-Mattausch, Mitiko; Ochi, Yoshihiro; Mattausch, Hans Jurgen

Force-Sensor-Based Surface Recognition With Surface-Property-Dependent Walking-Speed Adjustment of Humanoid Robot

IEEE ACCESS

IF3.6

2020-01-01

OAAI

Bhattacharya, Sandip; Luo, Aiwen; Dutta, Sunandan; Miura-Mattausch, Mitiko; Mattausch, Hans Jurgen

Analysis of Sensor-Based Real-Time Balancing of Humanoid Robots on Inclined Surfaces

IEEE ACCESS

IF3.6

2020-01-01

OAAI

Dutta, Sunandan; Maiti, Tapas Kumar; Miura-Mattausch, Mitiko; Ochi, Yoshihiro; Yorino, Naoto; Mattausch, Hans Jurgen

Surface-Property Recognition With Force Sensors for Stable Walking of Humanoid Robot

IEEE ACCESS

IF3.6

2019-01-01

OAAI

Bhattacharya, Sandip; Luo, Aiwen; Maiti, Tapas Kumar; Dutta, Sunandan; Ochi, Yoshihiro; Miura-Mattausch, Mitiko; Mattausch, Hans Jurgen

Power-Loss Prediction of High-Voltage SiC-MOSFET Circuits With Compact Model Including Carrier-Trap Influences

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2016-06-01

PREAI

Tanimoto, Yuta; Saito, Atsushi; Matsuura, Kai; Kikuchihara, Hideyuki; Mattausch, Hans Juergen; Miura-Mattausch, Mitiko; Kawamoto, Noriaki

Gate-length and drain-voltage dependence of thermal drain noise in advanced metal-oxide-semiconductor-field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2005-08-24

PREAI

Hosokawa, S; Navarro, D; Miura-Mattausch, M; Mattausch, HJ; Ohguro, T; Iizuka, T; Taguchi, M; Kumashiro, S; Miyamoto, S

Limit of validity of the drift-diffusion approximation for simulation of photodiode characteristics

APPLIED PHYSICS LETTERS

IF3.6

2004-02-23

PREAI

Konno, K; Matsushima, O; Navarro, D; Miura-Mattausch, M

Simple nondestructive extraction of the vertical channel-impurity profile of small-size metal-oxide-semiconductor field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2002-04-22

PREAI

Mattausch, HJ; Suetake, M; Kitamaru, D; Miura-Mattausch, M; Kumashiro, S; Shigyo, N; Odanaka, S; Nakayama, N

Evidence for an additional noise source modifying conventional 1/f frequency dependence in sub-μm metal-oxide-semiconductor field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2001-01-15

PREAI

Ueno, H; Kitamura, T; Matsumoto, S; Okagaki, T; Miura-Mattausch, M; Abe, H; Hamasaki, T

Superstable neutral electron traps in nonplanar thermal oxides on monocrystalline silicon

APPLIED PHYSICS LETTERS

IF3.6

2000-04-17

PREAI

Ono, T; Miura-Mattausch, M; Baumgärtner, H; Mattausch, HJ

Transconductance oscillations in metal-oxide-semiconductor field-effect transistors with thin silicon-on-insulator originated by quantized energy levels

APPLIED PHYSICS LETTERS

IF3.6

1999-09-06

PREAI

Takahashi, T; Miura-Mattausch, M; Omura, Y

研究方向