logo
科言猫学术研究的AI总结
language
手机端手机端
  • Phone Feature微信小程序
简体中文简体中文
notice消息通知
博客博客
delete
arrow
返回
S

Sandip Bhattacharya

SR University

31H指数
219论文数
3.4K被引数
收录论文 41
发表时间
logo
Multimode Plasmonic Resonance-Driven Frequency-Tunable Ultra-Wideband Terahertz Absorption in a Highly Compact Bilayer Graphene Metasurface多模态等离激元共振驱动的高频可调超宽带太赫兹吸收在高度紧凑的双层石墨烯超表面中
errMicro and Nanostructures
IF3
err2026-05-29
err0
PREAI
errDhanikonda Rajeswari; Sandip Bhattacharya; Naveen Kumar Maurya; Venu Reddy; Gandreddi Lakshmi Prasanna Ashok
err分享
err收藏
Advances in Nanocarbon/Metal Hybrid Materials for Interconnect Applications纳米碳/金属复合材料的互连应用进展
errAdvanced Engineering Materials
IF3.3
err2025-11-03
err0
PREAI
errDhanikonda Rajeswari; Rebelli Shashank; Sandip Bhattacharya; Venu Reddy
err分享
err收藏
A Digitally Controlled Delay Cell Based Pulse Shrinking Time-to-Digital Converter
errCircuits Systems and Signal Processing
IF2
err2025-10-01
err0
PREAI
errDebbarma, Bipasha; Mondal, Abir J.; Bhattacharya, Sandip
err分享
err收藏
Enhancing the Performance of InGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors for Future Radio-Frequency Power Amplifiers提升InGaN/GaN金属-氧化物-半导体高电子迁移率晶体管在未来射频功率放大器中的性能
errSEMICONDUCTORS
IF5.3
err2025-10-01
err0
PREAI
errRepaka, Lavanya; Ajayan, J.; Bhattacharya, Sandip
err分享
err收藏
Evaluating Structural Parameter Variations in AlGaN/GaN HEMTs on Si with Step-Graded InGaN Layers for future Radar and RF Transmitters评估在Si上具有阶梯渐变InGaN层的AlGaN/GaN HEMTs的结构参数变化，以用于未来的雷达和RF发射机
errNATIONAL ACADEMY SCIENCE LETTERS-INDIA
IF1.3
err2025-10-01
err0
PREAI
errAkshaykranth, A.; Ajayan, J.; Bhattacharya, Sandip
err分享
err收藏
Predicting the equivalent alkane carbon number of oils using graph neural networks and quantum mechanical descriptors使用图神经网络和量子力学描述符预测油的等效烷烃碳数
errComputers & Chemical Engineering
IF3.9
err2025-09-30
err0
errOAAI
errChristoforos Brozos; Sandip Bhattacharya; Jan G. Rittig; Elie Akanny; Philipp Eiden; Alexander Mitsos
err分享
err收藏
Comparative performance analysis of chromium, molybdenum, tungsten doping and co-doping at different sub-lattice sites of graphene for electrical double layer supercapacitor electrode design- a density functional theory based ab initio computational study铬、钼、钨掺杂及共掺杂在不同亚晶格位置的石墨烯在电双层超级电容器电极设计中的比较性能分析——一项基于密度泛函理论的从头算计算研究
errJOURNAL OF POWER SOURCES
IF7.9
err2025-05-01
err0
PREAI
errReddy, Abbidi Shivani; Prabhakar, Shreya; Bhattacharya, Sandip; Bhattacharjee, Ankur
err分享
err收藏
Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communication systems
errRESULTS IN ENGINEERING
IF7.9
err2025-03-01
err0
errOAAI
errDeshpande, Gauri; Ajayan, J.; Bhattacharya, Sandip; Mounika, B.; Dwivedi, Amit Krishna; Nirmal, D.
err分享
err收藏
Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers
errRESULTS IN ENGINEERING
IF7.9
err2025-03-01
err0
errOAAI
errAkshaykranth, A.; Ajayan, J.; Bhattacharya, Sandip; Nirmal, D.; Paramasivam, Santhosh; Gatto, Gianluca; Kumar, Amit
err分享
err收藏
Predicting the temperature-dependent CMC of surfactant mixtures with graph neural networks
errCOMPUTERS & CHEMICAL ENGINEERING
IF3.9
err2025-03-01
err0
errOAAI
errBrozos, Christoforos; Rittig, Jan G.; Akanny, Elie; Bhattacharya, Sandip; Kohlmann, Christina; Mitsos, Alexander
err分享
err收藏
LG = 50 nm T-gated and Fe-doped double quantum well GaN-HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications
errJOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES
IF6.8
err2024-12-01
err0
errOAAI
errMounika, B.; Ajayan, J.; Bhattacharya, Sandip; Nirmal, D.; Dwivedi, Amit Krishna
err分享
err收藏
EDL Supercapacitor Electrode Performance Analysis of Group-VIB and Group-X Transition Metal Adsorbed and Doped Graphene: A Density Functional Theory Based Comparative Investigation
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-07-10
err3
PREAI
errReddy, Abbidi Shivani; Bhattacharya, Sandip; Bhattacharjee, Ankur; Kanungo, Sayan
err分享
err收藏
Predicting the Temperature Dependence of Surfactant CMCs Using Graph Neural Networks
errJOURNAL OF CHEMICAL THEORY AND COMPUTATION
IF5.5
err2024-06-26
err2
errOAAI
errBrozos, Christoforos; Rittig, Jan G.; Bhattacharya, Sandip; Akanny, Elie; Kohlmann, Christina; Mitsos, Alexander
err分享
err收藏
2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/ GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications
errMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF4.6
err2024-03-01
err15
PREAI
errMounika, B.; Ajayan, J.; Bhattacharya, Sandip
err分享
err收藏
A Novel LG=40 nm AlN-GDC-HEMT on SiC Wafer With fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers
errIEEE ACCESS
IF3.6
err2024-01-01
err4
errOAAI
errMounika, B.; Panigrahy, Asisa Kumar; Ajayan, J.; Khadar Basha, N.; Bharath Sreenivasulu, Vakkalakula; Durga Prakash, M.; Bhattacharya, Sandip; Nirmal, D.
err分享
err收藏
Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications
errMATERIALS TODAY COMMUNICATIONS
IF4.5
err2023-06-01
err22
PREAI
errAjayan, J.; Mohankumar, P.; Nirmal, D.; Joseph, L. M. I. Leo; Bhattacharya, Sandip; Sreejith, S.; Kollem, Sreedhar; Rebelli, Shashank; Tayal, Shubham; Mounika, B.
err分享
err收藏
AlexNet-NDTL: Classification of MRI brain tumor images using modified AlexNet with deep transfer learning and Lipschitz-based data augmentation
errINTERNATIONAL JOURNAL OF IMAGING SYSTEMS AND TECHNOLOGY
IF2.5
err2023-03-20
err13
PREAI
errKollem, Sreedhar; Reddy, Katta Ramalinga; Prasad, Ch. Rajendra; Chakraborty, Avishek; Ajayan, J.; Sreejith, S.; Bhattacharya, Sandip; Joseph, L. M. I. Leo; Janapati, Ravichander
err分享
err收藏
Performance Analysis of the Dielectrically Modulated Junction-Less Nanotube Field Effect Transistor for Biomolecule Detection
errIEEE TRANSACTIONS ON NANOBIOSCIENCE
IF4.4
err2023-01-01
err17
PREAI
errTayal, Shubham; Majumdar, Budhaditya; Bhattacharya, Sandip; Kanungo, Sayan
err分享
err收藏
Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2022-11-01
err72
PREAI
errAjayan, J.; Nirmal, D.; Mohankumar, P.; Mounika, B.; Bhattacharya, Sandip; Tayal, Shubham; Fletcher, A. S. Augustine
err分享
err收藏
A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications
errMEASUREMENT
IF5.6
err2021-12-01
err33
PREAI
errAjayan, J.; Nirmal, D.; Ramesh, R.; Bhattacharya, Sandip; Tayal, Shubham; Joseph, L. M. I. Leo; Thoutam, Laxman Raju; Ajitha, D.
err分享
err收藏

研究方向

暂无研究方向
合作学者
合作期刊
S
Stefano Sanvito
H 指数: 78 · 论文数: 607
T
Tinh Quoc Bui
H 指数: 68 · 论文数: 404
A
Anke Weidenkaff
H 指数: 57 · 论文数: 522
S
Surjya K. Pal
H 指数: 56 · 论文数: 300
A
Alexander Mitsos
H 指数: 53 · 论文数: 586
查看更多