未登录A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications用于毫米波低噪声应用的GaN HEMT技术综述
Miller, Nicholas C.; Arias-Purdue, Andrea; Arkun, Erdem; Brown, David; Buckwalter, James F.; Coffie, Robert L.; Corrion, Andrea; Denninghoff, Daniel J.; Elliott, Michael; Fanning, Dave; Gilbert, Ryan; Green, Daniel S.; Herrault, Florian; Heying, Ben; King, Casey M.; Lam, Eythan; Moon, Jeong-Sun; Rowell, Petra V.; Siddiqi, Georges; Smorchkova, Ioulia; Tai, Joe; Uyeda, Jansen; Wojtowicz, Mike .png)
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收藏A Meeting of MaterialsGutierrez-Aitken, Augusto; Wu, Bryan Yi-Cheng; Scott, Dennis; Sato, Ken; Poust, Benjamin; Watanabe, Monte; Monier, Cedric; Lin, Nancy; Zeng, Xiang; Nakamura, Eric; Cheng, Peter; Kaneshiro, Eric; Chan, Wesley; Smorchkova, Ioulia; Thai, Khanh; Wang, Sujane; Slavin, David; Oki, Aaron; Kagiwada, Reynold 分享 收藏 Diverse Accessible Heterogeneous Integration (DAHI) Foundry at Northrop Grumman Aerospace Systems (NGAS)Gutierrez-Aitken, A.; Scott, D.; Sato, K.; Poust, B.; Nakamura, E.; Thai, K.; Chan, W.; Kaneshiro, E.; Monier, C.; Smorchkova, I.; Lin, N.; Ferizovic, D.; Zeng, X.; Oki, A.; Kagiwada, R. 分享 收藏 Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloysJena, D; Heikman, S; Green, D; Buttari, D; Coffie, R; Xing, H; Keller, S; DenBaars, S; Speck, JS; Mishra, UK; Smorchkova, I 分享 收藏 
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