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Fushun Li

yunnan university

H指数:4

被引数:47

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Electrochemical contact modification with MoO3: a strategy to enhance performance of p-type organic thin-film transistors

用MoO3进行电化学接触修饰：提升p型有机薄膜晶体管性能的一种策略

Chemical Communications

IF4.2

2026-04-010

PRE

Spin-coating fabrication of high-yield and uniform organic thin-film transistors via a primer template growth

IF13.7

2024-09-030

OA

Optimizing Thin Films and Device Structures for the Design of PbS Colloidal Quantum Dots Near-Infrared Photodetectors

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-05-170

PRE

Correlation between Morphology, Mechanics, and Electricity of PEDOT:PSS-Based Stretchable Electrodes Fabricated by the Prestrain Transfer Method

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-05-062

PRE

Hysteresis erasure in ZIF-8@ZnO nanorod array field-effect transistors through oxygen chemisorption-induced depolarization

IF4.5

2024-01-220

OA

Ion migration in p-type perovskite MAPbI3 films under an electric field and thin-film transistor device failure

CHEMICAL COMMUNICATIONS

IF4.2

2024-01-010

PRE

Unraveling the Influence of Surface Contaminants and Cleaning Protocols on Charge States of SiO2 Dielectrics and the Performance of Organic Field-Effect Transistors

解析表面污染物和清洁规程对SiO2介电体电荷状态及有机场效应晶体管性能的影响

IF3.9

0

PRE