Aaron R. Arehart - Publications, H-index & Citations

Aaron R. Arehart

The Ohio State University

40H指数

165论文数

5.0K被引数

收录论文 45

发表时间

Impact of RbF Postdeposition Treatment Dose on Defects and the Barrier at the Back Contact in (Ag, Cu)(In, Ga)Se₂ Solar Cells RbF后沉积处理剂量对(Cu, Ag)(In, Ga)Se₂太阳能电池背接触缺陷和势垒的影响

Solar RRL

IF4.7

2026-09-01

PREAI

Michael F. Miller; Marzieh M. Baan; Rico Gutzler; Ana Kanevce; Theresa Magorian Friedlmeier; Tyler J. Grassman; Aaron R. Arehart

Pyrolyzer Assisted Vapor Transport Deposition of Antimony-Doped Cadmium Telluride 热解器辅助气相输运沉积法制备锑掺杂碲化镉

IEEE JOURNAL OF PHOTOVOLTAICS

IF2.6

2025-12-01

PREAI

Du, Bin; Manoukian, Gregory A.; Guthrey, Harvey; Nahar, Aayush; Oliveira, Antonio J. N.; Dobson, Kevin D.; McCandless, Brian; Arehart, Aaron; Baxter, Jason B.; Shafarman, William N.

Deep level defects in MOCVD-grown β-(AlxGa1-x)2O3 MOCVD生长的β-(AlxGa1-x)2O3中的深能级缺陷

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-09-07

OAAI

Shuai, Quentin H.; Ghadi, Hemant; Cornuelle, Evan; McGlone, Joe F.; Anhar Uddin Bhuiyan, A. F. M.; Zhao, Hongping; Arehart, Aaron; Ringel, Steven A.

Small-signal capacitance-frequency modelling of the back contact barrier in Cu(In,Ga)Se2 solar cells Cu(In,Ga)Se₂太阳能电池背接触势垒的小信号电容-频率建模

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2025-06-17

PREAI

Miller, Michael F.; Nahar, Aayush; Paetel, Stefan; Valdes, Nicholas; Shafarman, William; Kanevce, Ana; Arehart, Aaron R.

Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies

APL MATERIALS

IF4.5

2023-11-07

OAAI

Ghadi, Hemant; Mcglone, Joe F.; Cornuelle, Evan; Senckowski, Alexander; Sharma, Shivam; Wong, Man Hoi; Singisetti, Uttam; Frodason, Ymir Kalmann; Peelaers, Hartwin; Lyons, John L.; Varley, Joel B.; van de Walle, Chris G.; Arehart, Aaron; Ringel, Steven A.

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

APPLIED PHYSICS LETTERS

IF3.6

2023-09-11

OAAI

Li, Wenbo; Zhang, Yuxuan; Chen, Zhaoying; Zhao, Hongping; Ringel, Steven A.; Arehart, Aaron R.

Nonradiative Recombination Dominates Voltage Losses in Cu(In,Ga)Se2 Solar Cells Fabricated using Different Methods 非辐射复合在使用不同方法制造的Cu (in，Ga)Se2太阳能电池中占主导地位

SOLAR RRL

IF4.7

2023-04-20

OAAI

Bothwell, Alexandra M.; Wands, Jake; Miller, Michael F.; Kanevce, Ana; Paetel, Stefan; Tsoulka, Polyxeni; Lepetit, Thomas; Barreau, Nicolas; Valdes, Nicholas; Shafarman, William; Rockett, Angus; Arehart, Aaron R.; Kuciauskas, Darius

Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3

APL MATERIALS

IF4.5

2022-10-27

OAAI

Ghadi, Hemant; McGlone, Joe F.; Cornuelle, Evan; Feng, Zixuan; Zhang, Yuxuan; Meng, Lingyu; Zhao, Hongping; Arehart, Aaron R.; Ringel, Steven A.

Large-Area (Ag,Cu)(In,Ga)Se2 Thin-Film Solar Cells with Increased Bandgap and Reduced Voltage Losses Realized with Bulk Defect Reduction and Front-Grading of the Absorber Bandgap

SOLAR RRL

IF4.7

2022-05-06

OAAI

Bothwell, Alexandra M.; Li, Siming; Farshchi, Rouin; Miller, Michael F.; Wands, Jake; Perkins, Craig L.; Rockett, Angus; Arehart, Aaron R.; Kuciauskas, Darius

β-Gallium oxide power electronics Β-氧化镓电力电子

APL MATERIALS

IF4.5

2022-02-07

322

OAAI

Green, Andrew J.; Speck, James; Xing, Grace; Moens, Peter; Allerstam, Fredrik; Gumaelius, Krister; Neyer, Thomas; Arias-Purdue, Andrea; Mehrotra, Vivek; Kuramata, Akito; Sasaki, Kohei; Watanabe, Shinya; Koshi, Kimiyoshi; Blevins, John; Bierwagen, Oliver; Krishnamoorthy, Sriram; Leedy, Kevin; Arehart, Aaron R.; Neal, Adam T.; Mou, Shin; Ringel, Steven A.; Kumar, Avinash; Sharma, Ankit; Ghosh, Krishnendu; Singisetti, Uttam; Li, Wenshen; Chabak, Kelson; Liddy, Kyle; Islam, Ahmad; Rajan, Siddharth; Graham, Samuel; Choi, Sukwon; Cheng, Zhe; Higashiwaki, Masataka

Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3

APPLIED PHYSICS LETTERS

IF3.6

2020-10-29

OAAI

Ghadi, Hemant; McGlone, Joe F.; Feng, Zixuan; Bhuiyan, A. F. M. Anhar Uddin; Zhao, Hongping; Arehart, Aaron R.; Ringel, Steven A.

Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition

APL MATERIALS

IF4.5

2020-02-13

OAAI

Ghadi, Hemant; McGlone, Joe F.; Jackson, Christine M.; Farzana, Esmat; Feng, Zixuan; Bhuiyan, A. F. M. Anhar Uddin; Zhao, Hongping; Arehart, Aaron R.; Ringel, Steven A.

Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field

APPLIED PHYSICS LETTERS

IF3.6

2019-12-17

113

OAAI

Xia, Zhanbo; Chandrasekar, Hareesh; Moore, Wyatt; Wang, Caiyu; Lee, Aidan J.; McGlone, Joe; Kalarickal, Nidhin Kurian; Arehart, Aaron; Ringel, Steven; Yang, Fengyuan; Rajan, Siddharth

Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

APL MATERIALS

IF4.5

2019-12-06

OAAI

Farzana, Esmat; Mauze, Akhil; Varley, Joel B.; Blue, Thomas E.; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga2O3

PHYSICAL REVIEW X

IF15.7

2019-11-06

111

OAAI

Johnson, Jared M.; Chen, Zhen; Varley, Joel B.; Jackson, Christine M.; Farzana, Esmat; Zhang, Zeng; Arehart, Aaron R.; Huang, Hsien-Lien; Genc, Arda; Ringel, Steven A.; Van de Walle, Chris G.; Muller, David A.; Hwang, Jinwoo

Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3

APPLIED PHYSICS LETTERS

IF3.6

2019-10-10

PREAI

Kalarickal, Nidhin Kurian; Xia, Zhanbo; McGlone, Joe; Krishnamoorthy, Sriram; Moore, Wyatt; Brenner, Mark; Arehart, Aaron R.; Ringel, Steven A.; Rajan, Siddharth

Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs

APPLIED PHYSICS LETTERS

IF3.6

2019-10-09

OAAI

McGlone, Joe F.; Xia, Zhanbo; Joishi, Chandan; Lodha, Saurabh; Rajan, Siddharth; Ringel, Steven; Arehart, Aaron R.

Velocity saturation in La-doped BaSnO3 thin films

APPLIED PHYSICS LETTERS

IF3.6

2019-08-26

OAAI

Chandrasekar, Hareesh; Cheng, Junao; Wang, Tianshi; Xia, Zhanbo; Combs, Nicholas G.; Freeze, Christopher R.; Marshall, Patrick B.; McGlone, Joe; Arehart, Aaron; Ringel, Steven; Janotti, Anderson; Stemmer, Susanne; Lu, Wu; Rajan, Siddharth

Direct Nanoscale Characterization of Deep Levels in AgCuInGaSe2 Using Electron Energy-Loss Spectroscopy in the Scanning Transmission Electron Microscope 在扫描透射电子显微镜中使用电子能量损失谱对AgCuInGaSe2中的深层进行直接纳米级表征

ADVANCED ENERGY MATERIALS

IF26

2019-08-05

OAAI

Deitz, Julia, I; Paul, Pran K.; Farshchi, Rouin; Poplavskyy, Dmitry; Bailey, Jeff; Arehart, Aaron R.; McComb, David W.; Grassman, Tyler J.

Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing

APPLIED PHYSICS LETTERS

IF3.6

2019-02-06

PREAI

Gleason, D. A.; Galiano, K.; Brown, J. L.; Hilton, A. M.; Ringel, S. A.; Arehart, A. R.; Heller, E. R.; Dorsey, D. L.; Pelz, J. P.

研究方向