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β-Gallium oxide power electronics
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DOI：10.1063/5.0060327.png)
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摘要
En 中文
Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new semiconductor system requires a concerted effort by the community to address technical barriers which limit performance. Due to the favorable intrinsic material properties of gallium oxide, namely, critical field strength, widely tunable conductivity, mobility, and melt-based bulk growth, the major targeted application space is power electronics where high performance is expected at low cost. This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of people active within the gallium oxide research community. Addressing these challenges will enhance the state-of-the-art device performance and allow us to design efficient, high-power, commercially scalable microelectronic systems using the newest semiconductor platform. (c) 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(http://creativecommons.org/licenses/by/4.0/).
Keyword:
BETA-GA2O3 SINGLE-CRYSTALS
SCHOTTKY-BARRIER DIODES
DOPED BETA-GA2O3
ALGAN/GAN HEMTS
GROWTH-RATE
MOSFETS
PERFORMANCE
EPITAXY
FIGURE
AL2O3
期刊
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4.5
论文数:
2.8K
被引数:
1.2W
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