Hiroshi Iwai - Publications, H-index & Citations

Hiroshi Iwai

Institute of Science Tokyo

45H指数

868论文数

9.5K被引数

收录论文 42

发表时间

Characteristic Variabilities of Subnanometer EOT La2O3 Gate Dielectric Film of Nano CMOS Devices

NANOMATERIALS

IF4.3

2021-08-20

OAAI

Wong, Hei; Zhang, Jieqiong; Iwai, Hiroshi; Kakushima, Kuniyuki

End of the Downsizing and World after That

2017 FOURTH INTERNATIONAL CONFERENCE ON MATHEMATICS AND COMPUTERS IN SCIENCES AND IN INDUSTRY (MCSI)

IF0

2017-08-01

PREAI

Iwai, Hiroshi

Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates

VACUUM

IF3.9

2017-06-01

PREAI

Kakushima, K.; Seki, T.; Wakabayashi, H.; Tsutsui, K.; Iwai, H.

Effects of thermal annealing on the interface between tungsten and CeO2/La2O3 stack gate dielectrics 热退火对钨与CeO2/La2O3叠层栅介质界面的影响

VACUUM

IF3.9

2017-06-01

PREAI

Zhang, Jieqiong; Wong, Hei; Kakushima, Kuniyuki; Iwai, Hiroshi

Durability evaluation of hexagonal WO3 electrode for lithium ion secondary batteries 锂离子二次电池用六角形WO3电极的耐久性评价

MICROELECTRONICS RELIABILITY

IF1.9

2017-01-01

PREAI

Sasaki, Akito; Oozu, Hideyuki; Nakamura, Miho; Aoki, Katsuaki; Kataoka, Yoshinori; Saito, Syuichi; Kobayashi, Kumpei; Li, Wei; Kakushima, Kuniyuki; Tsutsui, Kazuo; Iwai, Hiroshi

Improvement of the Charge/Discharge Rate by Introducing Oxygen Vacancies in WO3 Negative Electrodes for LIBs 通过在LIBs的WO3负极中引入氧空位来改善充电/放电速率

ELECTROCHEMISTRY

IF1.7

2017-01-01

OAAI

Sasaki, Akito; Sasaki, Atsuya; Kataoka, Yoshinori; Saito, Syuichi; Kobayashi, Kumpei; Kakushima, Kuniyuki; Tsutsui, Kazuo; Iwai, Hiroshi

Special Focus on Advanced Microelectronics Technology

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2016-07-20

OAAI

Huang, Ru; Iwai, Hiroshi; Claeys, Cor; Deleonibus, Simon; Wang, Runsheng

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

VACUUM

IF3.9

2015-08-01

PREAI

Wong, Hei; Zliang, Jieqiong; Dong, Shurong; Kakushima, Kuniyuki; Iwai, Hiroshi

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity

MICROELECTRONICS RELIABILITY

IF1.9

2015-02-01

PREAI

Li, Wei; Sasaki, Akito; Oozu, Hideyuki; Aoki, Katsuaki; Kakushima, Kuniyuki; Kataoka, Yoshinori; Nishiyama, Akira; Sugii, Nobuyuki; Wakabayashi, Hitoshi; Tsutsui, Kazuo; Natori, Kenji; Iwai, Hiroshi

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes

MICROELECTRONICS RELIABILITY

IF1.9

2015-02-01

PREAI

Li, Wei; Sasaki, Akito; Oozu, Hideyuki; Aoki, Katsuaki; Kakushima, Kuniyuki; Kataoka, Yoshinori; Nishiyama, Akira; Sugii, Nobuyuki; Wakabayashi, Hitoshi; Tsutsui, Kazuo; Natori, Kenji; Iwai, Hiroshi

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics

NANOSCALE RESEARCH LETTERS

IF4.1

2014-09-05

OAAI

Wong, Hei; Zhou, Jian; Zhang, Jieqiong; Jin, Hao; Kakushima, Kuniyuki; Iwai, Hiroshi

Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure

OPTICS EXPRESS

IF3.3

2014-01-23

OAAI

Sakurai, Yoko; Kakushima, Kuniyuki; Ohmori, Kenji; Yamada, Keisaku; Iwai, Hiroshi; Shiraishi, Kenji; Nomura, Shintaro

Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain

APPLIED PHYSICS LETTERS

IF3.6

2014-01-14

PREAI

Tuokedaerhan, K.; Kakushima, K.; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K.; Natori, K.; Iwai, H.

Characteristic Length of Oxide-Ion Conduction for Prediction of Active Thickness in SOFC Anode

solid oxide fuel cells

IF0

2013-10-06

PREAI

Kishimoto, M.; Iwai, H.; Saito, M.; Yoshida, H.

Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application

APPLIED PHYSICS LETTERS

IF3.6

2013-09-11

PREAI

Tuokedaerhan, K.; Tan, R.; Kakushima, K.; Ahmet, P.; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K.; Natori, K.; Hattori, T.; Iwai, H.

Current conduction and stability of CeO2/La2O3 stacked gate dielectric

APPLIED PHYSICS LETTERS

IF3.6

2012-12-06

PREAI

Wong, Hei; Yang, B. L.; Dong, Shurong; Iwai, H.; Kakushima, K.; Ahmet, P.

Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices

APPLIED PHYSICS LETTERS

IF3.6

2012-07-06

PREAI

Miranda, E.; Kano, S.; Dou, C.; Kakushima, K.; Sune, J.; Iwai, H.

Valence number transition and silicate formation of cerium oxide films on Si(100)Si(100) 上氧化铈薄膜的价数转变和硅酸盐形成

VACUUM

IF3.9

2012-04-01

PREAI

Mamatrishat, M.; Kouda, M.; Kakushima, K.; Nohira, H.; Ahmet, P.; Kataoka, Y.; Nishiyama, A.; Tsutsui, K.; Sugii, N.; Natori, K.; Hattori, T.; Iwai, H.

Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics

VACUUM

IF3.9

2012-02-01

PREAI

Wong, H.; Yang, B. L.; Kakushima, K.; Ahmet, P.; Iwai, H.

Effects of aluminum doping on lanthanum oxide gate dielectric films

VACUUM

IF3.9

2012-02-01

PREAI

Wong, Hei; Yang, B. L.; Kakushima, K.; Ahmet, P.; Iwai, H.

研究方向