Yoshio Nishi - Publications, H-index & Citations

Yoshio Nishi

Stanford University

61H指数

427论文数

1.5W被引数

收录论文 112

发表时间

The development of lithium ion secondary batteries

1996 SYMPOSIUM ON VLSI CIRCUITS - DIGEST OF TECHNICAL PAPERS

IF0

2024-10-30

PREAI

Nishi, Y

The development of lithium-ion secondary battery systems for EV and HEV

sixteenth annual battery conference on applications and advances

IF0

2024-10-23

PREAI

Nishi, Y; Katayama, K; Shigetomi, J; Horie, H

Carbon nanotube thermoelectric devices by direct printing: Toward wearable energy converters

APPLIED PHYSICS LETTERS

IF3.6

2021-04-27

OAAI

Lee, Hye Ryoung; Furukawa, Naoki; Ricco, Antonio J.; Pop, Eric; Cui, Yi; Nishi, Yoshio

Effect of IrO2 Spatial Distribution on the Stability and Charge Distribution of Ti1-xIrxO2 Alloys

CHEMISTRY OF MATERIALS

IF7

2019-10-01

PREAI

Villena, Marco A.; Magyari-Kope, Blanka; Nishi, Yoshio; McIntyre, Paul C.; Lanza, Mario

Contact Engineering High-Performance n-Type MoTe2 Transistors

NANO LETTERS

IF9.1

2019-07-17

110

OAAI

Mleczko, Michal J.; Yu, Andrew C.; Smyth, Christopher M.; Chen, Victoria; Shin, Yong Cheol; Chatterjee, Sukti; Tsai, Yi-Chia; Nishi, Yoshio; Wallace, Robert M.; Pop, Eric

Intrinsic limits of leakage current in self-heating-triggered threshold switches

APPLIED PHYSICS LETTERS

IF3.6

2019-05-06

PREAI

Wang, Ziwen; Kumar, Suhas; Williams, R. Stanley; Nishi, Yoshio; Wong, H-S Philip

Copper interstitial recombination centers in Cu3N

PHYSICAL REVIEW B

IF3.7

2018-06-04

OAAI

Yee, Ye Sheng; Inoue, Hisashi; Hultqvist, Adam; Hanifi, David; Salleo, Alberto; Magyari-Kope, Blanka; Nishi, Yoshio; Bent, Stacey F.; Clemens, Bruce M.

Research Update: Ab initio study on resistive memory device optimization trends: Dopant segregation effects and data retention in HfO2-x

APL MATERIALS

IF4.5

2018-05-31

OAAI

Magyari-Koepe, Blanka; Song, Yali; Duncan, Dan; Zhao, Liang; Nishi, Yoshio

Transient dynamics of NbOx threshold switches explained by Poole-Frenkel based thermal feedback mechanism

APPLIED PHYSICS LETTERS

IF3.6

2018-05-11

PREAI

Wang, Ziwen; Kumar, Suhas; Nishi, Yoshio; Wong, H. -S. Philip

Measurement of the vacuum-ultraviolet absorption spectrum of low-k dielectrics using X-ray reflectivity

APPLIED PHYSICS LETTERS

IF3.6

2018-02-22

PREAI

Choudhury, F. A.; Nguyen, H. M.; King, S. W.; Lee, C. H.; Lin, Y. H.; Fung, H. S.; Chen, C. C.; Li, W.; Benjamin, D.; Blatz, J. M.; Nishi, Y.; Shohet, J. L.

Effect of thermal insulation on the electrical characteristics of NbOx threshold switches

APPLIED PHYSICS LETTERS

IF3.6

2018-02-12

OAAI

Wang, Ziwen; Kumar, Suhas; Wong, H. -S. Philip; Nishi, Yoshio

Physical origins of current and temperature controlled negative differential resistances in NbO2

NATURE COMMUNICATIONS

IF15.7

2017-09-22

159

OAAI

Kumar, Suhas; Wang, Ziwen; Davila, Noraica; Kumari, Niru; Norris, Kate J.; Huang, Xiaopeng; Strachan, John Paul; Vine, David; Kilcoyne, A. L. David; Nishi, Yoshio; Williams, R. Stanley

HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides

SCIENCE ADVANCES

IF12.5

2017-08-04

232

OAAI

Mleczko, Michal J.; Zhang, Chaofan; Lee, Hye Ryoung; Kuo, Hsueh-Hui; Magyari-Kope, Blanka; Moore, Robert G.; Shen, Zhi-Xun; Fisher, Ian R.; Nishi, Yoshio; Pop, Eric

Properties of Dopants in HfOx for Improving the Performance of Nonvolatile Memory

PHYSICAL REVIEW APPLIED

IF4.4

2017-03-24

PREAI

Duncan, Dan; Magyari-Kope, Blanka; Nishi, Yoshio

Oxygen migration during resistance switching and failure of hafnium oxide memristors

APPLIED PHYSICS LETTERS

IF3.6

2017-03-06

OAAI

Kumar, Suhas; Wang, Ziwen; Huang, Xiaopeng; Kumari, Niru; Davila, Noraica; Strachan, John Paul; Vine, David; Kilcoyne, A. L. David; Nishi, Yoshio; Williams, R. Stanley

Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors

CHEMISTRY OF MATERIALS

IF7

2017-02-27

OAAI

Lee, Tae Hoon; Kim, Kwanpyo; Kim, Gwangwoo; Park, Hyo Ju; Scullion, Declan; Shaw, Leo; Kim, Myung-Gil; Gu, Xiaodan; Bae, Won-Gyu; Santos, Elton J. G.; Lee, Zonghoon; Shin, Hyeon Suk; Nishi, Yoshio; Bao, Zhenan

Polaronic interactions between oxygen vacancies in rutile TiO2

PHYSICAL REVIEW B

IF3.7

2017-02-06

OAAI

Zhao, Liang; Magyari-Koepe, Blanka; Nishi, Yoshio

Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors

NANOSCALE

IF5.1

2017-01-01

OAAI

Kumar, Suhas; Davila, Noraica; Wang, Ziwen; Huang, Xiaopeng; Strachan, John Paul; Vine, David; Kilcoyne, A. L. David; Nishi, Yoshio; Williams, R. Stanley

Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors

ACS NANO

IF16

2016-12-13

104

OAAI

Kumar, Suhas; Wang, Ziwen; Huang, Xiaopeng; Kumari, Niru; Davila, Noraica; Strachan, John Paul; Vine, David; Kilcoyne, A. L. David; Nishi, Yoshio; Williams, R. Stanley

The effect of vacuum ultraviolet irradiation on the time-dependent dielectric breakdown of organosilicate dielectrics

APPLIED PHYSICS LETTERS

IF3.6

2016-09-23

PREAI

Pei, D.; Xue, P.; Li, W.; Guo, X.; Lin, Y. H.; Fung, H. S.; Chen, C. C.; Nishi, Y.; Shohet, J. L.

研究方向